A method of generating random bits by using electronic bipolar memristor

doi:10.1088/1674-1056/ab77fd

中国物理B ›› 2020, Vol. 29 ›› Issue (4): 48505-048505.doi: 10.1088/1674-1056/ab77fd

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

A method of generating random bits by using electronic bipolar memristor

Bin-Bin Yang(杨彬彬), Nuo Xu(许诺), Er-Rui Zhou(周二瑞), Zhi-Wei Li(李智炜), Cheng Li(李成), Pin-Yun Yi(易品筠), Liang Fang(方粮)

1 Institute for Quantum Information&State Key Laboratory of High Performance Computing, College of Computer, National University of Defense Technology, Changsha 410073, China;
2 College of Computer, National University of Defense Technology, Changsha 410073, China;
3 College of Electronic Science and Engineering, National University of Defense Technology, Changsha 410073, China

收稿日期:2019-09-15 修回日期:2020-01-23 出版日期:2020-04-05 发布日期:2020-04-05
通讯作者: Nuo Xu, Liang Fang E-mail:oun_ux@163.com;lfang@nudt.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61832007) and the National Key Research and Development Program of China (Grant No. 2018YFB1003304).

A method of generating random bits by using electronic bipolar memristor

Bin-Bin Yang(杨彬彬)^1,2, Nuo Xu(许诺)², Er-Rui Zhou(周二瑞)^1,2, Zhi-Wei Li(李智炜)³, Cheng Li(李成)^1,2, Pin-Yun Yi(易品筠)^1,2, Liang Fang(方粮)^1,2

1 Institute for Quantum Information&State Key Laboratory of High Performance Computing, College of Computer, National University of Defense Technology, Changsha 410073, China;
2 College of Computer, National University of Defense Technology, Changsha 410073, China;
3 College of Electronic Science and Engineering, National University of Defense Technology, Changsha 410073, China

Received:2019-09-15 Revised:2020-01-23 Online:2020-04-05 Published:2020-04-05
Contact: Nuo Xu, Liang Fang E-mail:oun_ux@163.com;lfang@nudt.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61832007) and the National Key Research and Development Program of China (Grant No. 2018YFB1003304).

摘要/Abstract

摘要： The intrinsic stochasticity of resistance switching process is one of the holdblocks for using memristor as a fundamental element in the next-generation nonvolatile memory. However, such a weakness can be used as an asset for generating the random bits, which is valuable in a hardware security system. In this work, a forming-free electronic bipolar Pt/Ti/Ta₂O₅/Pt memristor is successfully fabricated to investigate the merits of generating random bits in such a device. The resistance switching mechanism of the fabricated device is ascribed to the electric field conducted electrons trapping/de-trapping in the deep-energy-level traps produced by the “oxygen grabbing” process. The stochasticity of the electrons trapping/de-trapping governs the random distribution of the set/reset switching voltages of the device, making a single memristor act as a random bit in which the resistance of the device represents information and the applied voltage pulse serves as the triggering signal. The physical implementation of such a random process provides a method of generating the random bits based on memristors in hardware security applications.

关键词: memristor, resistance switching, electrons trapping/de-trapping, random bits

Abstract: The intrinsic stochasticity of resistance switching process is one of the holdblocks for using memristor as a fundamental element in the next-generation nonvolatile memory. However, such a weakness can be used as an asset for generating the random bits, which is valuable in a hardware security system. In this work, a forming-free electronic bipolar Pt/Ti/Ta₂O₅/Pt memristor is successfully fabricated to investigate the merits of generating random bits in such a device. The resistance switching mechanism of the fabricated device is ascribed to the electric field conducted electrons trapping/de-trapping in the deep-energy-level traps produced by the “oxygen grabbing” process. The stochasticity of the electrons trapping/de-trapping governs the random distribution of the set/reset switching voltages of the device, making a single memristor act as a random bit in which the resistance of the device represents information and the applied voltage pulse serves as the triggering signal. The physical implementation of such a random process provides a method of generating the random bits based on memristors in hardware security applications.

Key words: memristor, resistance switching, electrons trapping/de-trapping, random bits

中图分类号: (Nanoelectronic devices)

85.35.-p

77.80.Fm (Switching phenomena) 05.40.-a (Fluctuation phenomena, random processes, noise, and Brownian motion)

杨彬彬, 许诺, 周二瑞, 李智炜, 李成, 易品筠, 方粮. A method of generating random bits by using electronic bipolar memristor[J]. 中国物理B, 2020, 29(4): 48505-048505.

Bin-Bin Yang(杨彬彬), Nuo Xu(许诺), Er-Rui Zhou(周二瑞), Zhi-Wei Li(李智炜), Cheng Li(李成), Pin-Yun Yi(易品筠), Liang Fang(方粮). A method of generating random bits by using electronic bipolar memristor[J]. Chin. Phys. B, 2020, 29(4): 48505-048505.

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A method of generating random bits by using electronic bipolar memristor

A method of generating random bits by using electronic bipolar memristor

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