中国物理B ›› 2020, Vol. 29 ›› Issue (4): 48401-048401.doi: 10.1088/1674-1056/ab75da
所属专题: SPECIAL TOPIC — Physics in neuromorphic devices
• SPECIAL TOPIC—Ultracold atom and its application in precision measurement • 上一篇 下一篇
Wuhong Xue(薛武红), Wenjuan Ci(次文娟), Xiao-Hong Xu(许小红), Gang Liu(刘钢)
收稿日期:
2020-01-08
修回日期:
2020-02-05
出版日期:
2020-04-05
发布日期:
2020-04-05
通讯作者:
Xiao-Hong Xu, Gang Liu
E-mail:xuxh@sxnu.edu.cn;gang.liu@sjtu.edu.cn
基金资助:
Wuhong Xue(薛武红)1,2, Wenjuan Ci(次文娟)1, Xiao-Hong Xu(许小红)1, Gang Liu(刘钢)2,3
Received:
2020-01-08
Revised:
2020-02-05
Online:
2020-04-05
Published:
2020-04-05
Contact:
Xiao-Hong Xu, Gang Liu
E-mail:xuxh@sxnu.edu.cn;gang.liu@sjtu.edu.cn
Supported by:
摘要: With the need of the internet of things, big data, and artificial intelligence, creating new computing architecture is greatly desired for handling data-intensive tasks. Human brain can simultaneously process and store information, which would reduce the power consumption while improve the efficiency of computing. Therefore, the development of brain-like intelligent device and the construction of brain-like computation are important breakthroughs in the field of artificial intelligence. Memristor, as the fourth fundamental circuit element, is an ideal synaptic simulator due to its integration of storage and processing characteristics, and very similar activities and the working mechanism to synapses among neurons which are the most numerous components of the brains. In particular, memristive synaptic devices with optoelectronic responding capability have the benefits of storing and processing transmitted optical signals with wide bandwidth, ultrafast data operation speed, low power consumption, and low cross-talk, which is important for building efficient brain-like computing networks. Herein, we review recent progresses in optoelectronic memristor for neuromorphic computing, including the optoelectronic memristive materials, working principles, applications, as well as the current challenges and the future development of the optoelectronic memristor.
中图分类号: (Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.))
薛武红, 次文娟, 许小红, 刘钢. Optoelectronic memristor for neuromorphic computing[J]. 中国物理B, 2020, 29(4): 48401-048401.
Wuhong Xue(薛武红), Wenjuan Ci(次文娟), Xiao-Hong Xu(许小红), Gang Liu(刘钢). Optoelectronic memristor for neuromorphic computing[J]. Chin. Phys. B, 2020, 29(4): 48401-048401.
[1] |
Waldrop M M 2016 Nature 530 144
doi: 10.1038/530144a |
[2] |
Hasegawa T, Terabe K, Tsuruoka T and Aono M 2012 Adv. Mater. 24 252
doi: 10.1002/adma.201102597 |
[3] |
Lee J and Lu W D 2018 Adv. Mater. 30 1702770
doi: 10.1002/adma.201702770 |
[4] |
Tang J, Yuan F, Shen X, Wang Z, Rao M, He Y, Sun Y, Li X, Zhang W, Li Y, Gao B, Qian H, Bi G, Song S, Yang J J and Wu H 2019 Adv. Mater. 31 1902761
doi: 10.1002/adma.201902761 |
[5] |
Chua L 1971 IEEE Trans. Circuit Theory 18 507
doi: 10.1109/TCT.1971.1083337 |
[6] |
Strukov D B, Snider G S, Stewart D R and Williams R S 2008 Nature 453 80
doi: 10.1038/nature06932 |
[7] | Zhao X, Xu H, Wang Z, Lin Y and Liu Y 2019 InfoMat 1 183 |
[8] |
Jo S H, Chang T, Ebong I, Bhadviya B B, Mazumder P and Lu W 2010 Nano Lett. 10 1297
doi: 10.1021/nl904092h |
[9] |
Wang Z Q, Xu H Y, Li X H, Yu H, Liu Y C and Zhu X J 2012 Adv. Func. Mater. 22 2759
doi: 10.1002/adfm.201103148 |
[10] |
Yang Y C, Pan F, Liu Q, Liu M and Zeng F 2009 Nano Lett. 9 1636
doi: 10.1021/nl900006g |
[11] |
Chen J Y, Hsin C L, Huang C W, Chiu C H, Huang Y T, Lin S J, Wu W W and Chen L J 2013 Nano Lett. 13 3671
doi: 10.1021/nl4015638 |
[12] |
Yang J J, Borghetti J, Murphy D, Stewart D R and Williams R S 2009 Adv. Mater. 21 3754
doi: 10.1002/adma.200900822 |
[13] |
Yao P, Wu H, Gao B, Eryilmaz S B, Huang X, Zhang W, Zhang Q, Deng N, Shi L, Wong H P and Qian H 2017 Nat. Commun. 8 15199
doi: 10.1038/ncomms15199 |
[14] | Gao S, Liu G, Yang H, Hu C, Chen Q, Gong G, Xue W, Yi X, Shang J and Li R W 2019 ACS Nano 13 2634 |
[15] |
Chen S, Lou Z, Chen D and Shen G 2018 Adv. Mater. 30 1705400
doi: 10.1002/adma.201705400 |
[16] | Lee G J, Choi C, Kim D H and Song Y M 2017 Adv. Funct. Mater. 28 1705202 |
[17] |
Tan H, Liu G, Zhu X, Yang H, Chen B, Chen X, Shang J, Lu W D, Wu Y and Li R W 2015 Adv. Mater. 27 2797
doi: 10.1002/adma.201500039 |
[18] |
Tan H, Liu G, Yang H, Yi X, Pan L, Shang J, Long S, Liu M, Wu Y and Li R W 2017 ACS Nano 11 11298
doi: 10.1021/acsnano.7b05762 |
[19] |
Chen G, Song C, Chen C, Gao S, Zeng F and Pan F 2012 Adv. Mater. 24 3515
doi: 10.1002/adma.201201595 |
[20] |
Yang J J, Pickett M D, Li X, Ohlberg D A, Stewart D R and Williams R S 2008 Nat. Nanotechnol. 3 429
doi: 10.1038/nnano.2008.160 |
[21] |
You T, Du N, Slesazeck S, Mikolajick T, Li G, Burger D, Skorupa I, Stocker H, Abendroth B, Beyer A, Volz K, Schmidt O G and Schmidt H 2014 ACS Appl. Mater. Interfaces 6 19758
doi: 10.1021/am504871g |
[22] |
Davis C B, Allred D D, Reyes-Mena A, González-Hernández J, González O, Hess B C and Allred W P 1993 Phys. Rev. B 47 13363
doi: 10.1103/PhysRevB.47.13363 |
[23] |
Dang X Z, Wang C D, Yu E T, Boutros K S and Redwing J M 1998 Appl. Phys. Lett. 72 2745
doi: 10.1063/1.121077 |
[24] |
Skorodumova N V, Simak S I, Lundqvist B I, Abrikosov I A and Johansson B 2002 Phys. Rev. Lett. 89 166601
doi: 10.1103/PhysRevLett.89.166601 |
[25] |
Nesheva D, Levi Z, Aneva Z, Nikolova V and Hofmeister H 2000 J. Phys.: Condens. Matter. 12 751
doi: 10.1088/0953-8984/12/5/320 |
[26] |
Zhou F, Zhou Z, Chen J, Choy T H, Wang J, Zhang N, Lin Z, Yu S, Kang J, Wong H P and Chai Y 2019 Nat. Nanotechnol. 14 776
doi: 10.1038/s41565-019-0501-3 |
[27] |
Cai S Y, Tzou C Y, Liou Y R, Chen D R, Jiang C Y, Ma J M, Chang C Y, Tseng C Y, Liao Y M, Hsieh Y P, Hofmann M and Chen Y F 2019 ACS Appl. Mater. Interfaces 11 4649
doi: 10.1021/acsami.8b19424 |
[28] |
Yang C S, Shang D S, Liu N, Fuller E J, Agrawal S, Talin A A, Li Y Q, Shen B G and Sun Y 2018 Adv. Funct. Mater. 28 1804170
doi: 10.1002/adfm.201804170 |
[29] |
Karbalaei Akbari M and Zhuiykov S 2019 Nat. Commun. 10 3873
doi: 10.1038/s41467-019-11823-4 |
[30] |
Zhao X, Wang Z, Xie Y, Xu H, Zhu J, Zhang X, Liu W, Yang G, Ma J and Liu Y 2018 Small 14 1801325
doi: 10.1002/smll.201801325 |
[31] |
Kumar M, Kim H S and Kim J 2019 Adv. Mater. 31 1900021
doi: 10.1002/adma.201900021 |
[32] |
Ren Y, Hu L, Mao J Y, Yuan J, Zeng Y J, Ruan S, Yang J Q, Zhou L, Zhou Y and Han S T 2018 J. Mater. Chem. C 6 9383
doi: 10.1039/C8TC03089H |
[33] |
Alquraishi W, Fu Y, Qiu W, Wang J, Chen Y, Kong L A, Sun J and Gao Y 2019 Org. Electron. 71 72
doi: 10.1016/j.orgel.2019.05.015 |
[34] |
Fan L, Chen Y, Liu Q, Chen S, Zhu L, Meng Q, Wang B, Zhang Q, Ren H and Zou C 2016 ACS Appl. Mater. Interfaces 8 32971
doi: 10.1021/acsami.6b12831 |
[35] |
Wu Q, Wang J, Cao J, Lu C, Yang G, Shi X, Chuai X, Gong Y, Su Y, Zhao Y, Lu N, Geng D, Wang H, Li L and Liu M 2018 Adv. Electron. Mater. 4 1800556
doi: 10.1002/aelm.201800556 |
[36] |
Li H K, Chen T P, Liu P, Hu S G, Liu Y, Zhang Q and Lee P S 2016 J. Appl. Phys. 119 244505
doi: 10.1063/1.4955042 |
[37] |
Wu Y, Wei Y, Huang Y, Cao F, Yu D, Li X and Zeng H 2017 Nano Res. 10 1584
doi: 10.1007/s12274-016-1288-2 |
[38] |
Chen Y, Liu G, Wang C, Zhang W, Li R W and Wang L 2014 Mater. Horiz. 1 489
doi: 10.1039/C4MH00067F |
[39] |
Liu G, Wang C, Zhang W, Pan L, Zhang C, Yang X, Fan F, Chen Y and Li R W 2016 Adv. Electron. Mater. 2 1500298
doi: 10.1002/aelm.201500298 |
[40] | Fang L, Dai S, Zhao Y, Liu D and Huang J 2019 Adv. Electron. Mater. 1901217 |
[41] |
Nau S, Wolf C, Sax S and List-Kratochvil E J 2015 Adv. Mater. 27 1048
doi: 10.1002/adma.201403295 |
[42] |
Zhang L, Pasthukova N, Yao Y, Zhong X, Pavlica E, Bratina G, Orgiu E and Samori P 2018 Adv. Mater. 30 1801181
doi: 10.1002/adma.201801181 |
[43] |
Jaafar A H, Gray R J, Verrelli E, O'Neill M, Kelly S M and Kemp N T 2017 Nanoscale 9 17091
doi: 10.1039/C7NR06138B |
[44] | Sun Y, Tai M, Song C, Wang Z, Yin J, Li F, Wu H, Zeng F, Lin H and Pan F 2018 J. Phys. Chem. C 122 6431 |
[45] |
Choi J, Le Q V, Hong K, Moon C W, Han J S, Kwon K C, Cha P R, Kwon Y, Kim S Y and Jang H W 2017 ACS Appl. Mater. Interfaces 9 30764
doi: 10.1021/acsami.7b08197 |
[46] |
Gu C and Lee J S 2016 ACS Nano 10 5413
doi: 10.1021/acsnano.6b01643 |
[47] |
Kim Y C, Kim K H, Son D Y, Jeong D N, Seo J Y, Choi Y S, Han I T, Lee S Y and Park N G 2017 Nature 550 87
doi: 10.1038/nature24032 |
[48] |
Kim D J, Tak Y J, Kim W G, Kim J K, Kim J H and Kim H J 2017 Adv. Mater. Interfaces 4 1601035
doi: 10.1002/admi.201601035 |
[49] |
Zhu X, Lee J and Lu W D 2017 Adv. Mater. 29 1700527
doi: 10.1002/adma.201700527 |
[50] |
Zhu X and Lu W D 2018 ACS Nano 12 1242
doi: 10.1021/acsnano.7b07317 |
[51] |
Ham S, Choi S, Cho H, Na S I and Wang G 2019 Adv. Funct. Mater. 29 1806646
doi: 10.1002/adfm.201806646 |
[52] |
Zhou F, Liu Y, Shen X, Wang M, Yuan F and Chai Y 2018 Adv. Funct. Mater. 28 1800080
doi: 10.1002/adfm.201800080 |
[53] |
Anichini C, Czepa W, Pakulski D, Aliprandi A, Ciesielski A and Samorí P 2018 Chem. Soc. Rev. 47 4860
doi: 10.1039/C8CS00417J |
[54] |
He Q, Wu S, Yin Z and Zhang H 2012 Chem. Sci. 3 1764
doi: 10.1039/c2sc20205k |
[55] |
Wu S, He Q, Tan C, Wang Y and Zhang H 2013 Small 9 1160
doi: 10.1002/smll.201202896 |
[56] |
Liu M, Yin X, Ulin-Avila E, Geng B, Zentgraf T, Ju L, Wang F and Zhang X 2011 Nature 474 64
doi: 10.1038/nature10067 |
[57] |
Qiao H, Yuan J, Xu Z, Chen C, Lin S, Wang Y, Song J, Liu Y, Khan Q, Hoh H Y, Pan C X, Li S and Bao Q 2015 ACS Nano 9 1886
doi: 10.1021/nn506920z |
[58] |
Yan F, Wei Z, Wei X, Lv Q, Zhu W and Wang K 2018 Small Methods 2 1700349
doi: 10.1002/smtd.201700349 |
[59] |
Huo N and Konstantatos G 2018 Adv. Mater. 30 1801164
doi: 10.1002/adma.201801164 |
[60] |
Liu C, Yan X, Song X, Ding S, Zhang D W and Zhou P 2018 Nat. Nanotech. 13 404
doi: 10.1038/s41565-018-0102-6 |
[61] |
Wu X, Ge R, Chen P A, Chou H, Zhang Z, Zhang Y, Banerjee S, Chiang M H, Lee J C and Akinwande D 2019 Adv. Mater. 31 1806790
doi: 10.1002/adma.201806790 |
[62] |
Wang M, Cai S, Pan C, Wang C, Lian X, Zhuo Y, Xu K, Cao T, Pan X, Wang B, Liang S J, Yang J J, Wang P and Miao F 2018 Nat. Electron. 1 130
doi: 10.1038/s41928-018-0021-4 |
[63] |
Seo S, Jo S H, Kim S, Shim J, Oh S, Kim J H, Heo K, Choi J W, Choi C, Oh S, Kuzum D, Wong H P and Park J H 2018 Nat. Commun. 9 5106
doi: 10.1038/s41467-018-07572-5 |
[64] | Ni Z, Wang Y, Liu L, Zhao S, Xu Y, Pi X and Yang D 2018 IEDM 2018 IEEE Int. 18-887 |
[65] |
Wang W, Panin G N, Fu X, Zhang L, Ilanchezhiyan P, Pelenovich V O, Fu D and Kang T W 2016 Sci. Rep. 6 31224
doi: 10.1038/srep31224 |
[66] | Campbell K A, Bassine R A, Kabir M F and Astle J 2018 ACS Appl. Electron. Mater. 1 96 |
[67] |
Lipatov A, Sharma P, Gruverman A and Sinitskii A 2015 ACS Nano 9 8089
doi: 10.1021/acsnano.5b02078 |
[68] |
He H K, Yang R, Zhou W, Huang H M, Xiong J, Gan L, Zhai T Y and Guo X 2018 Small 14 1800079
doi: 10.1002/smll.201800079 |
[69] |
Tran M D, Kim H, Kim J S, Doan M H, Chau T K, Vu Q A, Kim J H and Lee Y H 2019 Adv. Mater. 31 1807075
doi: 10.1002/adma.201807075 |
[70] |
Lee J, Pak S, Lee Y W, Cho Y, Hong J, Giraud P, Shin H S, Morris S M, Sohn J I, Cha S and Kim J M 2017 Nat. Commun. 8 14734
doi: 10.1038/ncomms14734 |
[71] |
Lee D, Hwang E, Lee Y, Choi Y, Kim J S, Lee S and Cho J H 2016 Adv. Mater. 28 9196
doi: 10.1002/adma.201603571 |
[72] |
Qin S Wang F, Liu Y, Wan Q, Wang X, Xu Y, Shi Y and Wang X 2017 2D Mater. 4 035022
doi: 10.1088/2053-1583/aa805e |
[73] |
Xiang D, Liu T, Xu J, Tan J Y, Hu Z, Lei B, Zheng Y, Wu J, Neto A H C, Liu L and Chen W 2018 Nat. Commun. 9 2966
doi: 10.1038/s41467-018-05397-w |
[74] |
Maier P, Hartmann F, Emmerling M, Schneider C, Kamp M, Höfling S and Worschech L 2016 Phys. Rev. Appl. 5 054011
doi: 10.1103/PhysRevApplied.5.054011 |
[75] |
Maier P, Hartmann F, Rebello Sousa Dias M, Emmerling M, Schneider C, Castelano L K, Kamp M, Marques G E, Lopez-Richard V, Worschech L and Höfling S 2016 Appl. Phys. Lett. 109 023501
doi: 10.1063/1.4955464 |
[76] |
Wang Y, Lv Z, Liao Q, Shan H, Chen J, Zhou Y, Zhou L, Chen X, Roy V A L, Wang Z, Xu Z, Zeng Y J and Han S T 2018 Adv. Mater. 30 1800327
doi: 10.1002/adma.201800327 |
[77] |
Yang Y C, Pan F, Liu Q, Liu M and Zeng F 2009 Nano Lett. 9 1636
doi: 10.1021/nl900006g |
[78] |
Jeong D S, Schroeder H and Waser R 2009 Phys. Rev. B 79 195317
doi: 10.1103/PhysRevB.79.195317 |
[79] |
Kalsbeck W A and Holden Thorp H 1991 J. Efectroanal. Chem. 314 363
doi: 10.1016/0022-0728(91)85451-T |
[80] |
Kumar M, Abbas S and Kim J 2018 ACS Appl. Mater. Interfaces 10 34370
doi: 10.1021/acsami.8b10870 |
[81] |
Zhai Y, Yang X, Wang F, Li Z, Ding G, Qiu Z, Wang Y, Zhou Y and Han S T 2018 Adv. Mater. 30 1803563
doi: 10.1002/adma.201803563 |
[82] |
Bandara H M and Burdette S C 2012 Chem. Soc. Rev. 41 1809
doi: 10.1039/C1CS15179G |
[83] | Tanaka K and Shimakawa K 2011 Amorphous Chalcogenide Semiconductors and Related Materials (New York: Springer) p. 185 |
[84] |
Yager K G, Tanchak O M, Godbout C, Fritzsche H and Barrett C J 2006 Macromolecules 39 9311
doi: 10.1021/ma0617320 |
[85] |
Ling H, Tan K, Fang Q, Xu X, Chen H, Li W, Liu Y, Wang L, Yi M, Huang R Qian Y, Xie L and Huang W 2017 Adv. Electron. Mater. 3 1600416
doi: 10.1002/aelm.201600416 |
[86] |
Qiu H, Zhao Y, Liu Z, Herder M, Hecht S and Samori P 2019 Adv. Mater. 31 1903402
doi: 10.1002/adma.201903402 |
[87] |
deQuilettes D W, Zhang W, Burlakov V M, Graham D J, Leijtens T, Osherov A, Bulovic V, Snaith H J, Ginger D S and Stranks S D 2016 Nat. Commun. 7 11683
doi: 10.1038/ncomms11683 |
[88] |
Wang Y, Yang J, Wang Z, Chen J, Yang Q, Lv Z, Zhou Y, Zhai Y, Li Z and Han S T 2019 Small 15 1805431
doi: 10.1002/smll.201805431 |
[89] |
Zhou Y, Yew K S, Ang D S, Kawashima T, Bera M K, Zhang H Z and Bersuker G 2015 Appl. Phys. Lett. 107 072107
doi: 10.1063/1.4929324 |
[90] |
Kawashima T, Zhou Y, Yew K S and Ang D S 2017 Appl. Phys. Lett. 111 113505
doi: 10.1063/1.5003107 |
[91] |
Emboras A, Niegemann J, Ma P, Haffner C, Pedersen A, Luisier M, Hafner C, Schimmel T and Leuthold J 2016 Nano Lett. 16 709
doi: 10.1021/acs.nanolett.5b04537 |
[92] |
Emboras A, Goykhman I, Desiatov B, Mazurski N, Stern L, Shappir J and Levy U 2013 Nano Lett. 13 6151
doi: 10.1021/nl403486x |
[93] |
Yao J N, Loo B H, Hashimoto K and Fujishima A 1990 J. Electroanal. Chem. 290 263
doi: 10.1016/0022-0728(90)87436-N |
[94] |
Wang S, Fan W, Liu Z, Yu A and Jiang X 2018 J. Mater. Chem. C 6 191
doi: 10.1039/C7TC04189F |
[95] |
Liu Q, Sun J, Lv H, Long S, Yin K, Wan N, Li Y, Sun L and Liu M 2012 Adv. Mater. 24 1844
doi: 10.1002/adma.201104104 |
[96] |
Tsuruoka T, Valov I, Tappertzhofen S, van den Hurk J, Hasegawa T, Waser R and Aono M 2015 Adv. Funct. Mater. 25 6374
doi: 10.1002/adfm.201500853 |
[97] |
Xiao Z and Huang J 2016 Adv. Electron. Mater. 2 1600100
doi: 10.1002/aelm.201600100 |
[98] |
Yizhar O, Fenno L E, Davidson T J, Mogri M and Deisseroth K 2011 Neuron 71 9
doi: 10.1016/j.neuron.2011.06.004 |
[99] | Wang Y, Yang J, Ye W, She D, Chen J, Lv Z, Roy V A L, Li H, Zhou K, Yang Q, Zhou Y and Han S T 2019 Adv. Electron. Mater. 1900765 |
[100] |
Shao L, Wang H, Yang Y, He Y, Tang Y, Fang H, Zhao J, Xiao H, Liang K, Wei M, Xu W, Luo M, Wan Q, Hu W, Gao T and Cui Z 2019 ACS Appl. Mater. Interfaces 11 12161
doi: 10.1021/acsami.9b02086 |
[101] |
Wang G, Wang R, Kong W and Zhang J 2018 Analysis. Cogn. Neurodyn. 12 615
doi: 10.1007/s11571-018-9490-4 |
[102] | Zhou F, Chen J, Tao X, Wang, X and Chai Y 2019 Research 2019 |
[1] | Zhan-Hong Guo(郭展宏), Zhi-Jun Li(李志军), Meng-Jiao Wang(王梦蛟), and Ming-Lin Ma(马铭磷). Hopf bifurcation and phase synchronization in memristor-coupled Hindmarsh-Rose and FitzHugh-Nagumo neurons with two time delays[J]. 中国物理B, 2023, 32(3): 38701-038701. |
[2] | Fan Sun(孙帆), Jing Su(粟静), Jie Li(李杰), Shukai Duan(段书凯), and Xiaofang Hu(胡小方). Memristor's characteristics: From non-ideal to ideal[J]. 中国物理B, 2023, 32(2): 28401-028401. |
[3] | Xi Zhu(朱熙), Hui Xu(徐晖), Weiping Yang(杨为平), Zhiwei Li(李智炜), Haijun Liu(刘海军), Sen Liu(刘森), Yinan Wang(王义楠), and Hongchang Long(龙泓昌). High throughput N-modular redundancy for error correction design of memristive stateful logic[J]. 中国物理B, 2023, 32(1): 18502-018502. |
[4] | Xiaodong Jiao(焦晓东), Mingfeng Yuan(袁明峰), Jin Tao(陶金), Hao Sun(孙昊), Qinglin Sun(孙青林), and Zengqiang Chen(陈增强). Memristor hyperchaos in a generalized Kolmogorov-type system with extreme multistability[J]. 中国物理B, 2023, 32(1): 10507-010507. |
[5] | Xiao-Juan Lian(连晓娟), Jin-Ke Fu(付金科), Zhi-Xuan Gao(高志瑄),Shi-Pu Gu(顾世浦), and Lei Wang(王磊). High-performance artificial neurons based on Ag/MXene/GST/Pt threshold switching memristors[J]. 中国物理B, 2023, 32(1): 17304-017304. |
[6] | Rui Yu(余睿), Zhe Sheng(盛喆), Wennan Hu(胡文楠), Yue Wang(王越), Jianguo Dong(董建国), Haoran Sun(孙浩然), Zengguang Cheng(程增光), and Zengxing Zhang(张增星). A field-effect WSe2/Si heterojunction diode[J]. 中国物理B, 2023, 32(1): 18505-018505. |
[7] | Zhi-Jun Li(李志军), Wen-Qiang Xie(谢文强), Jin-Fang Zeng(曾金芳), and Yi-Cheng Zeng(曾以成). Firing activities in a fractional-order Hindmarsh-Rose neuron with multistable memristor as autapse[J]. 中国物理B, 2023, 32(1): 10503-010503. |
[8] | Ling Liu(刘玲), Xiaoyan Wu(吴小龑), Guodong Liu(刘国栋), Tigang Ning(宁提纲),Jian Xu(许建), and Haidong You(油海东). Optoelectronic oscillator-based interrogation system for Michelson interferometric sensors[J]. 中国物理B, 2022, 31(9): 90702-090702. |
[9] | Qi Qin(秦琦), Miaocheng Zhang(张缪城), Suhao Yao(姚苏昊), Xingyu Chen(陈星宇), Aoze Han(韩翱泽),Ziyang Chen(陈子洋), Chenxi Ma(马晨曦), Min Wang(王敏), Xintong Chen(陈昕彤), Yu Wang(王宇),Qiangqiang Zhang(张强强), Xiaoyan Liu(刘晓燕), Ertao Hu(胡二涛), Lei Wang(王磊), and Yi Tong(童祎). Fabrication and investigation of ferroelectric memristors with various synaptic plasticities[J]. 中国物理B, 2022, 31(7): 78502-078502. |
[10] | Sheng-Hao Jia(贾生浩), Yu-Xia Li(李玉霞), Qing-Yu Shi(石擎宇), and Xia Huang(黄霞). Design and FPGA implementation of a memristor-based multi-scroll hyperchaotic system[J]. 中国物理B, 2022, 31(7): 70505-070505. |
[11] | Ming-Jian Guo(郭明健), Shu-Kai Duan(段书凯), and Li-Dan Wang(王丽丹). Pulse coding off-chip learning algorithm for memristive artificial neural network[J]. 中国物理B, 2022, 31(7): 78702-078702. |
[12] | Wu-Yang Zhu(朱伍洋), Yi-Fei Pu(蒲亦非), Bo Liu(刘博), Bo Yu(余波), and Ji-Liu Zhou(周激流). A mathematical analysis: From memristor to fracmemristor[J]. 中国物理B, 2022, 31(6): 60204-060204. |
[13] | Yan-Mei Lu(卢艳梅), Chun-Hua Wang(王春华), Quan-Li Deng(邓全利), and Cong Xu(徐聪). The dynamics of a memristor-based Rulkov neuron with fractional-order difference[J]. 中国物理B, 2022, 31(6): 60502-060502. |
[14] | Wenwu Jiang(蒋文武), Jie Li(李杰), Hongbo Liu(刘洪波), Xicong Qian(钱曦聪), Yuan Ge(葛源), Lidan Wang(王丽丹), and Shukai Duan(段书凯). Memristor-based multi-synaptic spiking neuron circuit for spiking neural network[J]. 中国物理B, 2022, 31(4): 40702-040702. |
[15] | Guoqi Zhao(赵国琪), Jiahao Xie(颉家豪), Kun Zhou(周琨), Bangyu Xing(邢邦昱), Xinjiang Wang(王新江), Fuyu Tian(田伏钰), Xin He(贺欣), and Lijun Zhang(张立军). High-throughput computational material screening of the cycloalkane-based two-dimensional Dion—Jacobson halide perovskites for optoelectronics[J]. 中国物理B, 2022, 31(3): 37104-037104. |
|