Evaluation of polarization field in InGaN/GaN multiple quantum well structures by using electroluminescence spectra shift

doi:10.1088/1674-1056/ab6967

中国物理B ›› 2020, Vol. 29 ›› Issue (3): 34206-034206.doi: 10.1088/1674-1056/ab6967

• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇下一篇

Evaluation of polarization field in InGaN/GaN multiple quantum well structures by using electroluminescence spectra shift

1 State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences(CAS), Beijing 100083, China;
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
3 Key Laboratory of Nano-devices and Applications of CAS, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

收稿日期:2019-11-18 修回日期:2019-12-16 出版日期:2020-03-05 发布日期:2020-03-05
通讯作者: De-Gang Zhao E-mail:dgzhao@red.semi.ac.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant Nos. 2016YFB0400803 and 2016YFB0401801) and the National Natural Science Foundation of China (Grant Nos. 61674138, 61674139, 61604145, 61574135, and 61574134).

Evaluation of polarization field in InGaN/GaN multiple quantum well structures by using electroluminescence spectra shift

Ping Chen(陈平)^1,2, De-Gang Zhao(赵德刚)^1,2, De-Sheng Jiang(江德生)¹, Jing Yang(杨静)¹, Jian-Jun Zhu(朱建军)^1,2, Zong-Shun Liu(刘宗顺)¹, Wei Liu(刘炜)¹, Feng Liang(梁锋)¹, Shuang-Tao Liu(刘双韬)¹, Yao Xing(邢瑶)¹, Li-Qun Zhang(张立群)³

1 State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences(CAS), Beijing 100083, China;
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
3 Key Laboratory of Nano-devices and Applications of CAS, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

Received:2019-11-18 Revised:2019-12-16 Online:2020-03-05 Published:2020-03-05
Contact: De-Gang Zhao E-mail:dgzhao@red.semi.ac.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grant Nos. 2016YFB0400803 and 2016YFB0401801) and the National Natural Science Foundation of China (Grant Nos. 61674138, 61674139, 61604145, 61574135, and 61574134).

摘要/Abstract

摘要： In order to investigate the inherent polarization intensity in InGaN/GaN multiple quantum well (MQW) structures, the electroluminescence (EL) spectra of three samples with different GaN barrier thicknesses of 21.3 nm, 11.4 nm, and 6.5 nm are experimentally studied. All of the EL spectra present a similar blue-shift under the low-level current injection, and then turns to a red-shift tendency when the current increases to a specific value, which is defined as the turning point. The value of this turning point differs from one another for the three InGaN/GaN MQW samples. Sample A, which has the GaN barrier thickness of 21.3 nm, shows the highest current injection level at the turning point as well as the largest value of blue-shift. It indicates that sample A has the maximum intensity of the polarization field. The red-shift of the EL spectra results from the vertical electron leakage in InGaN/GaN MQWs and the corresponding self-heating effect under the high-level current injection. As a result, it is an effective approach to evaluate the polarization field in the InGaN/GaN MQW structures by using the injection current level at the turning point and the blue-shift of the EL spectra profiles.

关键词: InGaN/GaN multiple quantum well (MQW), polarization field, electroluminescence spectra shift, electron leakage current

Abstract: In order to investigate the inherent polarization intensity in InGaN/GaN multiple quantum well (MQW) structures, the electroluminescence (EL) spectra of three samples with different GaN barrier thicknesses of 21.3 nm, 11.4 nm, and 6.5 nm are experimentally studied. All of the EL spectra present a similar blue-shift under the low-level current injection, and then turns to a red-shift tendency when the current increases to a specific value, which is defined as the turning point. The value of this turning point differs from one another for the three InGaN/GaN MQW samples. Sample A, which has the GaN barrier thickness of 21.3 nm, shows the highest current injection level at the turning point as well as the largest value of blue-shift. It indicates that sample A has the maximum intensity of the polarization field. The red-shift of the EL spectra results from the vertical electron leakage in InGaN/GaN MQWs and the corresponding self-heating effect under the high-level current injection. As a result, it is an effective approach to evaluate the polarization field in the InGaN/GaN MQW structures by using the injection current level at the turning point and the blue-shift of the EL spectra profiles.

Key words: InGaN/GaN multiple quantum well (MQW), polarization field, electroluminescence spectra shift, electron leakage current

中图分类号: (Semiconductor lasers; laser diodes)

42.55.Px

73.21.Fg (Quantum wells) 78.60.Fi (Electroluminescence)

陈平, 赵德刚, 江德生, 杨静, 朱建军, 刘宗顺, 刘炜, 梁锋, 刘双韬, 邢瑶, 张立群. Evaluation of polarization field in InGaN/GaN multiple quantum well structures by using electroluminescence spectra shift[J]. 中国物理B, 2020, 29(3): 34206-034206.

Ping Chen(陈平), De-Gang Zhao(赵德刚), De-Sheng Jiang(江德生), Jing Yang(杨静), Jian-Jun Zhu(朱建军), Zong-Shun Liu(刘宗顺), Wei Liu(刘炜), Feng Liang(梁锋), Shuang-Tao Liu(刘双韬), Yao Xing(邢瑶), Li-Qun Zhang(张立群). Evaluation of polarization field in InGaN/GaN multiple quantum well structures by using electroluminescence spectra shift[J]. Chin. Phys. B, 2020, 29(3): 34206-034206.

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Evaluation of polarization field in InGaN/GaN multiple quantum well structures by using electroluminescence spectra shift

Evaluation of polarization field in InGaN/GaN multiple quantum well structures by using electroluminescence spectra shift

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