Oxide-aperture-dependent output characteristics of circularly symmetric VCSEL structure

doi:10.1088/1674-1056/ab5fbd

中国物理B ›› 2020, Vol. 29 ›› Issue (2): 24201-024201.doi: 10.1088/1674-1056/ab5fbd

• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇下一篇

Oxide-aperture-dependent output characteristics of circularly symmetric VCSEL structure

Wen-Yuan Liao(廖文渊), Jian Li(李健), Chuan-Chuan Li(李川川), Xiao-Feng Guo(郭小峰), Wen-Tao Guo(郭文涛), Wei-Hua Liu(刘维华), Yang-Jie Zhang(张杨杰), Xin Wei(韦欣), Man-Qing Tan(谭满清)

1 State Key Laboratory of Integrated Optoelectronic, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China;
3 Laboratory of Nano-photoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

收稿日期:2019-09-12 修回日期:2019-10-23 出版日期:2020-02-05 发布日期:2020-02-05
通讯作者: Man-Qing Tan E-mail:mqtan@semi.ac.cn

Oxide-aperture-dependent output characteristics of circularly symmetric VCSEL structure

Wen-Yuan Liao(廖文渊)^1,2, Jian Li(李健)³, Chuan-Chuan Li(李川川)^2,3, Xiao-Feng Guo(郭小峰)¹, Wen-Tao Guo(郭文涛)¹, Wei-Hua Liu(刘维华)^1,2, Yang-Jie Zhang(张杨杰)^1,2, Xin Wei(韦欣)^2,3, Man-Qing Tan(谭满清)^1,2

1 State Key Laboratory of Integrated Optoelectronic, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China;
3 Laboratory of Nano-photoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Received:2019-09-12 Revised:2019-10-23 Online:2020-02-05 Published:2020-02-05
Contact: Man-Qing Tan E-mail:mqtan@semi.ac.cn

摘要/Abstract

摘要： The influence of oxidation aperture on the output characteristics of the circularly symmetric vertical-cavity-surface-emitting laser (VCSEL) structure is investigated. To do so, VCSELs with different oxide aperture sizes are simulated by the finite-difference time-domain (FDTD) method. The relationships among the field distribution of mode superposition, mode wavelength, output spectra, and far-field divergence with different oxide apertures are obtained. Further, VCSELs respectively with oxide aperture sizes of 2.7 μm, 4.4 μm, 5.9 μm, 7 μm, 8 μm, 9 μm, and 18.7 μm are fabricated and characterized. The maximum output power increases from 2.4 mW to 5.7 mW with oxide aperture increasing from 5.9 μm to 9 μm. Meanwhile, the wavelength tuning rate decreases from 0.93 nm/mA to 0.375 nm/mA when the oxide aperture increases from 2.7 μm to 9 μm. The thermal resistance decreases from 2.815 ℃/mW to 1.015 ℃/mW when the oxide aperture increases from 4.4 μm to 18.7 μm. It is demonstrated theoretically and experimentally that the wavelength spacing between adjacent modes increases with the augment of the injection current and the spacing becomes smaller with the oxide aperture increasing. Thus it can be reported that the aperture size can effectively reduce the mode overlaying but at the cost of the power decreasing and the wavelength tuning rate and thermal resistance increasing.

关键词: finite-difference time-domain (FDTD), vertical-cavity-surface-emitting laser (VCSEL), oxide aperture, wavelength spacing

Abstract: The influence of oxidation aperture on the output characteristics of the circularly symmetric vertical-cavity-surface-emitting laser (VCSEL) structure is investigated. To do so, VCSELs with different oxide aperture sizes are simulated by the finite-difference time-domain (FDTD) method. The relationships among the field distribution of mode superposition, mode wavelength, output spectra, and far-field divergence with different oxide apertures are obtained. Further, VCSELs respectively with oxide aperture sizes of 2.7 μm, 4.4 μm, 5.9 μm, 7 μm, 8 μm, 9 μm, and 18.7 μm are fabricated and characterized. The maximum output power increases from 2.4 mW to 5.7 mW with oxide aperture increasing from 5.9 μm to 9 μm. Meanwhile, the wavelength tuning rate decreases from 0.93 nm/mA to 0.375 nm/mA when the oxide aperture increases from 2.7 μm to 9 μm. The thermal resistance decreases from 2.815 ℃/mW to 1.015 ℃/mW when the oxide aperture increases from 4.4 μm to 18.7 μm. It is demonstrated theoretically and experimentally that the wavelength spacing between adjacent modes increases with the augment of the injection current and the spacing becomes smaller with the oxide aperture increasing. Thus it can be reported that the aperture size can effectively reduce the mode overlaying but at the cost of the power decreasing and the wavelength tuning rate and thermal resistance increasing.

Key words: finite-difference time-domain (FDTD), vertical-cavity-surface-emitting laser (VCSEL), oxide aperture, wavelength spacing

中图分类号: (Semiconductor lasers; laser diodes)

42.55.Px

廖文渊, 李健, 李川川, 郭小峰, 郭文涛, 刘维华, 张杨杰, 韦欣, 谭满清. Oxide-aperture-dependent output characteristics of circularly symmetric VCSEL structure[J]. 中国物理B, 2020, 29(2): 24201-024201.

Wen-Yuan Liao(廖文渊), Jian Li(李健), Chuan-Chuan Li(李川川), Xiao-Feng Guo(郭小峰), Wen-Tao Guo(郭文涛), Wei-Hua Liu(刘维华), Yang-Jie Zhang(张杨杰), Xin Wei(韦欣), Man-Qing Tan(谭满清). Oxide-aperture-dependent output characteristics of circularly symmetric VCSEL structure[J]. Chin. Phys. B, 2020, 29(2): 24201-024201.

参考文献 25

[1]	Iga K 2000 IEEE J. Sel. Top. Quantum Electron. 6 1201 doi: 10.1109/2944.902168
[2]	Koyama F 2006 IEEE J. Lightw. Technol. 24 4502 doi: 10.1109/JLT.2006.886064
[3]	Zhao Z B, Xu C, Xie Y Y, Zhou K, Liu F and Shen G D 2012 Chin. Phys. B 21 034206 doi: 10.1088/1674-1056/21/3/034206
[4]	Seurin J F, Zhou D L, Xu G Y, et al. 2016 Proc. SPIE 9766 97660D
[5]	Zhou D L, Seurin J F, Xu G Y, et al. 2014 Proc. SPIE 9001 90010E
[6]	Seurin J F, Xu G Y, Wang Q, et al. 2010 Proc. SPIE 7615 76150F-1
[7]	Kasukawa A, Takaki K, Imai S, Shimizu H, et al. 2011 Proc. IEEE Photon. Conf. 393
[8]	Jackson K P and Schow C L 2013 VCSEL-Based Transceivers for Data Communications (Berlin: Springer), pp. 431-448
[9]	Westbergh P, Safaisini R, Haglund E, et al. 2012 Electron. Lett. Vol 48 1145 doi: 10.1049/el.2012.2525
[10]	Kuchta D M, Schow C L, Baks C W, Westbergh P, Gustavsson J S and Larsson A 2015 IEEE Photon. Technol. Lett. 27 577 doi: 10.1109/LPT.2014.2385671
[11]	Xiang L, Zhang X, Zhang J W, Ning Y Q, Werner Hofmann and Wang L J 2017 Chin. Phys. B 26 074299
[12]	Robertson J, Wade E and Hurtado A 2019 IEEE J. Selec Top. Quantum Electron. 25 5100307
[13]	Xiang S Y, Zhang Y H, Gong J K, et al. 2019 IEEE J. Selec Top. Quantum Electron. 25 1700109
[14]	Xiang S Y, Zhang Y H, Guo X X, Wen A J and Hao Y 2018 J. Lightwave Technol. 36 4227 doi: 10.1109/JLT.2018.2818195
[15]	Sakaguchi J, Katayama T and Kawaguchi H 2010 Opt. Express 18 12362 doi: 10.1364/OE.18.012362
[16]	Kuo Y K, Chen J R, Chen M L and Liou B T 2007 Appl. Phys. B 86 623 doi: 10.1007/s00340-006-2567-5
[17]	Iga K 2008 Jpn. J. Appl. Phys. 47 1 doi: 10.1143/JJAP.47.1
[18]	Iga K 2018 Jpn. J. Appl. Phys. 57 08PA01
[19]	Hawkins B M, Hawthorne R A, Guenter J K, et al. 2002 Electronic Components and Technology Conference, May 28-31, 2002, San Diego, USA, p. 540
[20]	Chang Y C, Wang C S, Johansson L A, et al. 2006 Electron. Lett. 42 1281 doi: 10.1049/el:20062538
[21]	Sharizal A M, Leisher P O, Choquette K D, et al. 2009 Optik 120 121 doi: 10.1016/j.ijleo.2007.07.005
[22]	Choi J H, Wang L, Bi H and Chen R T 2006 IEEE J. Sel. Top. Quantum Electron. 12 1060 doi: 10.1109/JSTQE.2006.881903
[23]	Saleh B E A and Teich M C 2007 Fundamentals of Photonics (New York: John Wiley & Sons) p. 331
[24]	Pereira S, Willemsen M, Exter M V and Woerdman J 1998 Appl. Phys. Lett. 73 2239 doi: 10.1063/1.121688
[25]	Henry C H, Logan R A and Bertness K A 1981 J. Appl. Phys. 52 4457 doi: 10.1063/1.329371

Oxide-aperture-dependent output characteristics of circularly symmetric VCSEL structure

Oxide-aperture-dependent output characteristics of circularly symmetric VCSEL structure

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