Homogeneous and inhomogeneous magnetic oxide semiconductors

doi:10.1088/1674-1056/ab38ac

中国物理B ›› 2019, Vol. 28 ›› Issue (9): 98506-098506.doi: 10.1088/1674-1056/ab38ac

所属专题： TOPICAL REVIEW — A celebration of the 100th birthday of Kun Huang

• TOPICAL REVIEW-A celebration of the 100th birthday of Kun Huang • 上一篇下一篇

Homogeneous and inhomogeneous magnetic oxide semiconductors

Xiao-Li Li(李小丽), Xiao-Hong Xu(许小红)

1 Key Laboratory of Magnetic Molecules & Magnetic Information Materials of Ministry of Education and School of Chemistry and Materials Science, Shanxi Normal University, Linfen 041004, China;
2 Research Institute of Materials Science of Shanxi Normal University and Collaborative Innovation Center for Shanxi Advanced Permanent Magnetic Materials and Technology, Linfen 041004, Chinas

收稿日期:2019-06-25 修回日期:2019-07-24 出版日期:2019-09-05 发布日期:2019-09-05
通讯作者: Xiao-Hong Xu E-mail:xuxh@sxnu.edu.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant No. 2017YFB0405703), the National Natural Science Foundation of China (Grant Nos. 61434002, 51571136, and 11274214), and the Special Funds of Sanjin Scholars Program, China.

Homogeneous and inhomogeneous magnetic oxide semiconductors

Xiao-Li Li(李小丽)^1,2, Xiao-Hong Xu(许小红)^1,2

1 Key Laboratory of Magnetic Molecules & Magnetic Information Materials of Ministry of Education and School of Chemistry and Materials Science, Shanxi Normal University, Linfen 041004, China;
2 Research Institute of Materials Science of Shanxi Normal University and Collaborative Innovation Center for Shanxi Advanced Permanent Magnetic Materials and Technology, Linfen 041004, Chinas

Received:2019-06-25 Revised:2019-07-24 Online:2019-09-05 Published:2019-09-05
Contact: Xiao-Hong Xu E-mail:xuxh@sxnu.edu.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grant No. 2017YFB0405703), the National Natural Science Foundation of China (Grant Nos. 61434002, 51571136, and 11274214), and the Special Funds of Sanjin Scholars Program, China.

摘要/Abstract

摘要：

Magnetic oxide semiconductors are significant spintronics materials. In this article, we review recent advances for homogeneous and inhomogeneous magnetic oxide semiconductors. In the homogeneous magnetic oxide semiconductors, we focus on the various doping techniques including choosing different transition metals, codoping, non-magnetic doping, and even un-doping to realize homogeneous substitution and the clear magnetic origin. And the enhancement of the ferromagnetism is achieved by nanodot arrays engineering, which is accompanied by the tunable optical properties. In the inhomogeneous magnetic oxide semiconductors, we review some heterostructures and their magnetic and transport properties, especially magnetoresistance, which are dramatically modulated by electric field in the constructed devices. And the related mechanisms are discussed in details. Finally, we provide an overview and possible potential applications of magnetic oxide semiconductors.

关键词: magnetic oxide semiconductors, ferromagnetism, magnetoresistance

Abstract:

Key words: magnetic oxide semiconductors, ferromagnetism, magnetoresistance

中图分类号: (Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)

85.75.-d

75.50.Pp (Magnetic semiconductors) 75.70.-i (Magnetic properties of thin films, surfaces, and interfaces)

李小丽, 许小红. Homogeneous and inhomogeneous magnetic oxide semiconductors[J]. 中国物理B, 2019, 28(9): 98506-098506.

Xiao-Li Li(李小丽), Xiao-Hong Xu(许小红). Homogeneous and inhomogeneous magnetic oxide semiconductors[J]. Chin. Phys. B, 2019, 28(9): 98506-098506.

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Homogeneous and inhomogeneous magnetic oxide semiconductors

Homogeneous and inhomogeneous magnetic oxide semiconductors

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