Photoluminescence in fluorescent 4H-SiC single crystal adjusted by B, Al, and N ternary dopants

doi:10.1088/1674-1056/28/1/017101

中国物理B ›› 2019, Vol. 28 ›› Issue (1): 17101-017101.doi: 10.1088/1674-1056/28/1/017101

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Photoluminescence in fluorescent 4H-SiC single crystal adjusted by B, Al, and N ternary dopants

Shi-Yi Zhuo(卓世异), Xue-Chao Liu(刘学超), Wei Huang(黄维), Hai-Kuan Kong(孔海宽), Jun Xin(忻隽), Er-Wei Shi(施尔畏)

Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201899, China

收稿日期:2018-09-13 修回日期:2018-10-29 出版日期:2019-01-05 发布日期:2019-01-05
通讯作者: Xue-Chao Liu, Wei Huang E-mail:xcliu@mail.sic.ac.cn;whsic@outlook.com
基金资助:
Project supported by the National Key Research and Development Program of China (Grant Nos. 2017YFB0405700 and 2016YFB0400400), the Young Scientists Fund of the National Natural Science Foundation of China (Grant Nos. 51602331 and 61404146), and the Shanghai Science and Technology Innovation Action Plan Program, China (Grant No. 17511106200).

Photoluminescence in fluorescent 4H-SiC single crystal adjusted by B, Al, and N ternary dopants

Shi-Yi Zhuo(卓世异), Xue-Chao Liu(刘学超), Wei Huang(黄维), Hai-Kuan Kong(孔海宽), Jun Xin(忻隽), Er-Wei Shi(施尔畏)

Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201899, China

Received:2018-09-13 Revised:2018-10-29 Online:2019-01-05 Published:2019-01-05
Contact: Xue-Chao Liu, Wei Huang E-mail:xcliu@mail.sic.ac.cn;whsic@outlook.com
Supported by:
Project supported by the National Key Research and Development Program of China (Grant Nos. 2017YFB0405700 and 2016YFB0400400), the Young Scientists Fund of the National Natural Science Foundation of China (Grant Nos. 51602331 and 61404146), and the Shanghai Science and Technology Innovation Action Plan Program, China (Grant No. 17511106200).

摘要/Abstract

摘要：

This paper reports the sensitive effect of photoluminescence peak intensity and transmittance affected by B, Al, and N dopants in fluorescent 4H-SiC single crystals. The crystalline type, doping concentration, photoluminescence spectra, and transmission spectra were characterized at room temperature. It is found that the doped 4H-SiC single crystal emits a warm white light covering a wide range from 460 nm to 720 nm, and the transmittance increases from ~10% to ~60% with the fluctuation of B, Al, and N ternary dopants. With a parameter of C_D-A, defined by B, Al, and N concentration, the photoluminescence and transmittance properties can be adjusted by optimal doping regulation.

关键词: photoluminescence property, luminescence adjustment, N-B-Al codoped 4H-SiC

Abstract:

Key words: photoluminescence property, luminescence adjustment, N-B-Al codoped 4H-SiC

中图分类号: (Semiconductor compounds)

71.20.Nr

42.70.-a (Optical materials) 78.20.-e (Optical properties of bulk materials and thin films) 78.55.-m (Photoluminescence, properties and materials)

卓世异, 刘学超, 黄维, 孔海宽, 忻隽, 施尔畏. Photoluminescence in fluorescent 4H-SiC single crystal adjusted by B, Al, and N ternary dopants[J]. 中国物理B, 2019, 28(1): 17101-017101.

Shi-Yi Zhuo(卓世异), Xue-Chao Liu(刘学超), Wei Huang(黄维), Hai-Kuan Kong(孔海宽), Jun Xin(忻隽), Er-Wei Shi(施尔畏). Photoluminescence in fluorescent 4H-SiC single crystal adjusted by B, Al, and N ternary dopants[J]. Chin. Phys. B, 2019, 28(1): 17101-017101.

参考文献 25

[1]	Ou Y Y, Aijaz I, Jokubavicius V, Yakimova R, Syväjärvi M and Ou H Y 2013 Opt. Mater. Express 3 86 doi: 10.1364/OME.3.000086
[2]	Lu W F, Ou Y Y, Jokubavicius V, Fadil A, Syväjärvi M, Petersen P M and Ou H Y 2016 Phys. Scr. 91 074001 doi: 10.1088/0031-8949/91/7/074001
[3]	Mckittrick J and Shea-Rohwer L E 2014 J. Am. Ceram. Soc. 97 1327 doi: 10.1111/jace.12943
[4]	Lu W F, Ou Y Y, Fiordaliso E M, Iwasa Y, Jokubavicius V, Syväjärvi M, Kamiyama S, Petersen P M and Ou H Y 2017 Sci. Rep. 7 9798 doi: 10.1038/s41598-017-10771-7
[5]	Ou H Y, Ou Y Y, Argyraki A, Schimmel S, Kaiser M, Wellmann P, Linnarsson M K, Jokubavicius V, Sun J W, Liljedahl R and Syväjärvi M 2014 Eur. Phys. J. B 87 58 doi: 10.1140/epjb/e2014-41100-0
[6]	Kamiyama S, Iwaya M, Takeuchi T, Akasaki I, Syväjärvi M and Yakimova R 2011 J. Semicond. 32 013004 doi: 10.1088/1674-4926/32/1/013004
[7]	Ou Y Y, Corell D D, Dam-Hansen C, Petersen P M and Ou H Y 2011 Opt. Express 19 A166
[8]	Ikeda M, Hayakawa T, Yamagiwa S, Matsumani H and Tanaka T 1979 J. Appl. Phys. 50 8215 doi: 10.1063/1.325920
[9]	Kamiyama S, Maeda T, Nakamura Y, Iwaya M, Amano H and Akasaki I 2006 J. Appl. Phys. 99 093108 doi: 10.1063/1.2195883
[10]	Jokubavicius V, Hens P, Liljedahl R, Sun J W, Kaiser M, Wellmann P, Sano S, Yakimova R, Kamiyama S and Syväjärvi M 2012 Thin Solid Films 522 7 doi: 10.1016/j.tsf.2011.10.176
[11]	Manolis G, Gulbinas K, Grivickas V, Jokubavicius V, Linnarsson M K, and Syväjärvi M 2014 Mater. Sci. Eng. 56 012006
[12]	Camassel J, Juillaguet S, Planes N, Raymond A, Grosse P, Basset G, Faure C, Couchaud M, Bluet J M, Chourou K, Anikin M and Madar R 1999 Mat. Sci. Eng. B 61-62 258 doi: 10.1016/S0921-5107(98)00514-5
[13]	Gavryushin V, Gulbinas K, Grivickas V, Karaliûnas M, Stasiûnas M, Jokubavicius V, Sun J W and Syväjärvi M 2014 Mat. Sci. Eng. 56 012003
[14]	Ikeda M, Matsunami H and Tanaka T 1980 Phys. Rev. B 22 2842 doi: 10.1103/PhysRevB.22.2842
[15]	Zhuo S Y, Liu X, Gao P, Yan C F and Shi E W 2017 J. Inorg. Mater. 32 51 (in Chinese)
[16]	Nakashima S and Harima H 1997 Phys. Stat. Sol. (a) 162 39
[17]	Wei R S, Chen X F, Wang L H, Song S, Yang K, Hu X B, Peng Y and Xu X G 2013 Int. J. Electrochem. Sci. 8 7099
[18]	Ou Y Y, Jokubavlcius V, Linnarsson M, Yakimova R, Syväjärvi M and Ou H Y 2012 Phys. Scr. T148 014003 doi: 10.1088/0031-8949/2012/T148/014003
[19]	Syväjärvi M, Müller J, Sun J W, Grlvlckas V, Ou Y Y, Jokubavlclus V, Hens P, Kaisr M, Ariyawong K, Gulbinas K, Hens P, Liljedahl R, Linnarsson M K, Kamiyama S, Wellmann P, Spiecker E and Ou H Y 2012 Phys. Scr. T148 014002 doi: 10.1088/0031-8949/2012/T148/014002
[20]	Ou Y Y, Jokubavicius V, Kamiyama S, Liu C, Berg R W, Linnarsson M, Yakimova R, Syväjärvi M and Ou H Y 2011 Opt. Mater. Express 1 1439 doi: 10.1364/OME.1.001439
[21]	Zhuo S Y, Liu X C, Xu T X, Yan C F and Shi E W 2018 AIP Adv. 8 075130 doi: 10.1063/1.5044492
[22]	Limpijumnong S, Lambrecht W R L, RashKeev S N and Segall B 1999 Phys. Rev. B 59 12890 doi: 10.1103/PhysRevB.59.12890
[23]	Sridhara S G, Bai S, Shigiltchoff O, Devaty R P and Choyke W J 2000 Mater. Sci. Forum 338-342 551 doi: 10.4028/www.scientific.net/MSF.338-342.551
[24]	Wellmann P J and Weingärtner R 2003 Mat. Sci. Eng. B 102 262 doi: 10.1016/S0921-5107(02)00707-9
[25]	Sun J W, Kamiyama S, Jokubavicius V, Peyre H, Yakimova R, Juillaguet S and Syväjärvi M 2012 J. Phys. D-Appl. Phys. 45 235107 doi: 10.1088/0022-3727/45/23/235107

Photoluminescence in fluorescent 4H-SiC single crystal adjusted by B, Al, and N ternary dopants

Photoluminescence in fluorescent 4H-SiC single crystal adjusted by B, Al, and N ternary dopants

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 25

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Chaoxin Huang(黄潮欣), Benyuan Cheng(程本源), Yunwei Zhang(张云蔚), Long Jiang(姜隆), Lisi Li(李历斯), Mengwu Huo(霍梦五), Hui Liu(刘晖), Xing Huang(黄星), Feixiang Liang(梁飞翔), Lan Chen(陈岚), Hualei Sun(孙华蕾), and Meng Wang(王猛). Crystal and electronic structure of a quasi-two-dimensional semiconductor Mg₃Si₂Te₆[J]. 中国物理B, 2023, 32(3): 37802-037802.
[2]	Xiaohua Li(李晓华), Baoji Wang(王宝基), and Sanhuang Ke(柯三黄). Blue phosphorene/MoSi₂N₄ van der Waals type-II heterostructure: Highly efficient bifunctional materials for photocatalytics and photovoltaics[J]. 中国物理B, 2023, 32(2): 27104-027104.
[3]	Jian-Ying Yue(岳建英), Xue-Qiang Ji(季学强), Shan Li(李山), Xiao-Hui Qi(岐晓辉), Pei-Gang Li(李培刚), Zhen-Ping Wu(吴真平), and Wei-Hua Tang(唐为华). Dramatic reduction in dark current of β-Ga₂O₃ ultraviolet photodectors via β-(Al_0.25Ga_0.75)₂O₃ surface passivation[J]. 中国物理B, 2023, 32(1): 16701-016701.
[4]	Saichao Yan(闫赛超), Jinchen Wei(魏金宸), Shanshan Wang(王珊珊), Menglin Huang(黄梦麟), Yu-Ning Wu(吴宇宁), and Shiyou Chen(陈时友). Defect physics of the quasi-two-dimensional photovoltaic semiconductor GeSe[J]. 中国物理B, 2022, 31(11): 116103-116103.
[5]	Juan Qin(秦娟), Gang Cao(曹港), Run Xu(徐闰), Jing Lin(林婧), Hua Meng(孟华), Wen-Zhen Wang(王文贞), Zi-Ye Hong(洪子叶), Jian-Cong Cai(蔡健聪), and Dong-Mei Li(李冬梅). Investigation of transport properties of perovskite single crystals by pulsed and DC bias transient current technique[J]. 中国物理B, 2022, 31(11): 117102-117102.
[6]	Zhi-Fu Zhu(朱志甫), Shao-Tang Wang(王少堂), Ji-Jun Zou(邹继军), He Huang(黄河), Zhi-Jia Sun(孙志嘉), Qing-Lei Xiu(修青磊), Zhong-Ming Zhang(张忠铭), Xiu-Ping Yue(岳秀萍), Yang Zhang(张洋), Jin-Hui Qu(瞿金辉), and Yong Gan(甘勇). Synthesis of hexagonal boron nitride films by dual temperature zone low-pressure chemical vapor deposition[J]. 中国物理B, 2022, 31(8): 86103-086103.
[7]	Zein K. Heiba, Mohamed Bakr Mohamed, Ali A. Alkathiri, Sameh I. Ahmed, A A Alhazime. Impact of composition ratio on the structure and optical properties of (1-x)MnFe₂O₄/(x)ZnMn₂O₄ nanocomposite[J]. 中国物理B, 2022, 31(7): 77102-077102.
[8]	Jie Shen(沈洁), Xitong Xu(许锡童), Miao He(何苗), Yonglai Liu(刘永来), Yuyan Han(韩玉岩), and Zhe Qu(屈哲). Spin freezing in the van der Waals material Mn₂Ga₂S₅[J]. 中国物理B, 2022, 31(6): 67105-067105.
[9]	Gang Wu(吴刚), Lu Wang(王璐), Kuo Bao(包括), Xianli Li(李贤丽), Sheng Wang(王升), and Chunhong Xu(徐春红). Bandgap evolution of Mg₃N₂ under pressure: Experimental and theoretical studies[J]. 中国物理B, 2022, 31(6): 66205-066205.
[10]	Jie Wang(王杰), Guang-Zhe Ma(马广哲), Lu Cao(曹露), Min Gao(高敏), and Dong Shi(石东). Doublet luminescence due to coexistence of excitons and electron-hole plasmas in optically excited CH₃NH₃PbBr₃ single crystal[J]. 中国物理B, 2022, 31(4): 47104-047104.
[11]	Na Qin(秦娜), Xian Du(杜宪), Yangyang Lv(吕洋洋), Lu Kang(康璐), Zhongxu Yin(尹中旭), Jingsong Zhou(周景松), Xu Gu(顾旭), Qinqin Zhang(张琴琴), Runzhe Xu(许润哲), Wenxuan Zhao(赵文轩), Yidian Li(李义典), Shuhua Yao(姚淑华), Yanfeng Chen(陈延峰), Zhongkai Liu(柳仲楷), Lexian Yang(杨乐仙), and Yulin Chen(陈宇林). Electronic structure and spin–orbit coupling in ternary transition metal chalcogenides Cu₂TlX₂ (X = Se, Te)[J]. 中国物理B, 2022, 31(3): 37101-037101.
[12]	Chun Zhou(周淳), Junchao Huang(黄俊超), and Xiangmei Duan(段香梅). Two-dimensional PC₃ as a promising anode material for potassium-ion batteries: First-principles calculations[J]. 中国物理B, 2021, 30(5): 56801-056801.
[13]	Xianyin Song(宋先印), Hongtao Zhou(周洪涛), and Changzhong Jiang(蒋昌忠). Cathodic shift of onset potential on TiO₂ nanorod arrays with significantly enhanced visible light photoactivity via nitrogen/cobalt co-implantation[J]. 中国物理B, 2021, 30(5): 58505-058505.
[14]	. [J]. 中国物理B, 2021, 30(2): 26101-0.
[15]	. [J]. 中国物理B, 2021, 30(1): 17101-.