中国物理B ›› 2019, Vol. 28 ›› Issue (1): 17101-017101.doi: 10.1088/1674-1056/28/1/017101

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Photoluminescence in fluorescent 4H-SiC single crystal adjusted by B, Al, and N ternary dopants

Shi-Yi Zhuo(卓世异), Xue-Chao Liu(刘学超), Wei Huang(黄维), Hai-Kuan Kong(孔海宽), Jun Xin(忻隽), Er-Wei Shi(施尔畏)   

  1. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201899, China
  • 收稿日期:2018-09-13 修回日期:2018-10-29 出版日期:2019-01-05 发布日期:2019-01-05
  • 通讯作者: Xue-Chao Liu, Wei Huang E-mail:xcliu@mail.sic.ac.cn;whsic@outlook.com
  • 基金资助:

    Project supported by the National Key Research and Development Program of China (Grant Nos. 2017YFB0405700 and 2016YFB0400400), the Young Scientists Fund of the National Natural Science Foundation of China (Grant Nos. 51602331 and 61404146), and the Shanghai Science and Technology Innovation Action Plan Program, China (Grant No. 17511106200).

Photoluminescence in fluorescent 4H-SiC single crystal adjusted by B, Al, and N ternary dopants

Shi-Yi Zhuo(卓世异), Xue-Chao Liu(刘学超), Wei Huang(黄维), Hai-Kuan Kong(孔海宽), Jun Xin(忻隽), Er-Wei Shi(施尔畏)   

  1. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201899, China
  • Received:2018-09-13 Revised:2018-10-29 Online:2019-01-05 Published:2019-01-05
  • Contact: Xue-Chao Liu, Wei Huang E-mail:xcliu@mail.sic.ac.cn;whsic@outlook.com
  • Supported by:

    Project supported by the National Key Research and Development Program of China (Grant Nos. 2017YFB0405700 and 2016YFB0400400), the Young Scientists Fund of the National Natural Science Foundation of China (Grant Nos. 51602331 and 61404146), and the Shanghai Science and Technology Innovation Action Plan Program, China (Grant No. 17511106200).

RichHTML

0

PDF (PC)

257

赞

摘要：

This paper reports the sensitive effect of photoluminescence peak intensity and transmittance affected by B, Al, and N dopants in fluorescent 4H-SiC single crystals. The crystalline type, doping concentration, photoluminescence spectra, and transmission spectra were characterized at room temperature. It is found that the doped 4H-SiC single crystal emits a warm white light covering a wide range from 460 nm to 720 nm, and the transmittance increases from ~10% to ~60% with the fluctuation of B, Al, and N ternary dopants. With a parameter of CD-A, defined by B, Al, and N concentration, the photoluminescence and transmittance properties can be adjusted by optimal doping regulation.

关键词: photoluminescence property, luminescence adjustment, N-B-Al codoped 4H-SiC

Abstract:

This paper reports the sensitive effect of photoluminescence peak intensity and transmittance affected by B, Al, and N dopants in fluorescent 4H-SiC single crystals. The crystalline type, doping concentration, photoluminescence spectra, and transmission spectra were characterized at room temperature. It is found that the doped 4H-SiC single crystal emits a warm white light covering a wide range from 460 nm to 720 nm, and the transmittance increases from ~10% to ~60% with the fluctuation of B, Al, and N ternary dopants. With a parameter of CD-A, defined by B, Al, and N concentration, the photoluminescence and transmittance properties can be adjusted by optimal doping regulation.

Key words: photoluminescence property, luminescence adjustment, N-B-Al codoped 4H-SiC

中图分类号:  (Semiconductor compounds)

  • 71.20.Nr
42.70.-a (Optical materials) 78.20.-e (Optical properties of bulk materials and thin films) 78.55.-m (Photoluminescence, properties and materials)