Inverse spin Hall effect in ITO/YIG exited by spin pumping and spin Seebeck experiments

doi:10.1088/1674-1056/28/1/017201

中国物理B ›› 2019, Vol. 28 ›› Issue (1): 17201-017201.doi: 10.1088/1674-1056/28/1/017201

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Inverse spin Hall effect in ITO/YIG exited by spin pumping and spin Seebeck experiments

Kejian Zhu(朱科建), Weijian Lin(林伟坚), Yangtao Su(苏仰涛), Haibin Shi(石海滨), Yang Meng(孟洋), Hongwu Zhao(赵宏武)

1 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China;
3 Songshan Lake Materials Laboratory, Dongguan 523808, China

收稿日期:2018-09-28 修回日期:2018-10-31 出版日期:2019-01-05 发布日期:2019-01-05
通讯作者: Hongwu Zhao E-mail:hwzhao@aphy.iphy.ac.cn
基金资助:
Project supported by the National Key Basic Research Project of China (Grant No. 2016YFA0300600), Chinese Academy of Sciences (Grant No. KJCX2-YW-W24), the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 11604375), and the Laboratory of Microfabrication of Institute of Physics, Chinese Academy of Sciences.

Inverse spin Hall effect in ITO/YIG exited by spin pumping and spin Seebeck experiments

Kejian Zhu(朱科建)^1,2, Weijian Lin(林伟坚)^1,2, Yangtao Su(苏仰涛)^1,2, Haibin Shi(石海滨)^1,2, Yang Meng(孟洋)^1,2, Hongwu Zhao(赵宏武)^1,2,3

1 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China;
3 Songshan Lake Materials Laboratory, Dongguan 523808, China

Received:2018-09-28 Revised:2018-10-31 Online:2019-01-05 Published:2019-01-05
Contact: Hongwu Zhao E-mail:hwzhao@aphy.iphy.ac.cn
Supported by:
Project supported by the National Key Basic Research Project of China (Grant No. 2016YFA0300600), Chinese Academy of Sciences (Grant No. KJCX2-YW-W24), the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 11604375), and the Laboratory of Microfabrication of Institute of Physics, Chinese Academy of Sciences.

摘要/Abstract

摘要：

Spin currents, which are excited in indium tin oxide (ITO)/yttrium iron garnet (YIG) by the methods of spin pumping and spin Seebeck effect, are investigated through the inverse spin Hall effect (ISHE). It is demonstrated that the ISHE voltage can be generated in ITO by spin pumping under both in-plane and out-of-plane magnetization configurations. Moreover, it is observed that the enhancement of spin Hall angle and interfacial spin mixing conductance can be achieved by an appropriate annealing process. However, the ISHE voltage is hardly seen in the presence of a longitudinal temperature gradient. The absence of the longitudinal spin Seebeck effect can be ascribed to the almost equal thermal conductivity of ITO and YIG and specific interface structure, or to the large negative temperature dependent spin mixing conductance.

关键词: spin pumping, spin Seebeck effect, inverse spin Hall effect

Abstract:

Key words: spin pumping, spin Seebeck effect, inverse spin Hall effect

中图分类号: (Spin polarized transport in semiconductors)

72.25.Dc

72.25.Mk (Spin transport through interfaces) 46.40.Ff (Resonance, damping, and dynamic stability)

朱科建, 林伟坚, 苏仰涛, 石海滨, 孟洋, 赵宏武. Inverse spin Hall effect in ITO/YIG exited by spin pumping and spin Seebeck experiments[J]. 中国物理B, 2019, 28(1): 17201-017201.

Kejian Zhu(朱科建), Weijian Lin(林伟坚), Yangtao Su(苏仰涛), Haibin Shi(石海滨), Yang Meng(孟洋), Hongwu Zhao(赵宏武). Inverse spin Hall effect in ITO/YIG exited by spin pumping and spin Seebeck experiments[J]. Chin. Phys. B, 2019, 28(1): 17201-017201.

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Inverse spin Hall effect in ITO/YIG exited by spin pumping and spin Seebeck experiments

Inverse spin Hall effect in ITO/YIG exited by spin pumping and spin Seebeck experiments

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