中国物理B ›› 2018, Vol. 27 ›› Issue (10): 107201-107201.doi: 10.1088/1674-1056/27/10/107201

所属专题: TOPICAL REVIEW — Spin manipulation in solids

• SPECIAL TOPIC—Recent advances in thermoelectric materials and devices • 上一篇    下一篇

Spin switching in antiferromagnets using Néel-order spin-orbit torques

P Wadley, K W Edmonds   

  1. School of Physics and Astronomy, University of Nottingham, University Park, Nottingham NG7 2RD, United Kingdom
  • 收稿日期:2018-07-07 修回日期:2018-08-06 出版日期:2018-10-05 发布日期:2018-10-05
  • 通讯作者: K W Edmonds E-mail:Kevin.Edmonds@nottingham.ac.uk
  • 基金资助:

    Project supported by EPSRC (Grant No. EP/P019749/1). P Wadley acknowledges support from the Royal Society through a University Research Fellowship.

Spin switching in antiferromagnets using Néel-order spin-orbit torques

P Wadley, K W Edmonds   

  1. School of Physics and Astronomy, University of Nottingham, University Park, Nottingham NG7 2RD, United Kingdom
  • Received:2018-07-07 Revised:2018-08-06 Online:2018-10-05 Published:2018-10-05
  • Contact: K W Edmonds E-mail:Kevin.Edmonds@nottingham.ac.uk
  • Supported by:

    Project supported by EPSRC (Grant No. EP/P019749/1). P Wadley acknowledges support from the Royal Society through a University Research Fellowship.

摘要:

Antiferromagnets offer considerable potential for electronic device applications. This article reviews recent demonstrations of spin manipulation in antiferromagnetic devices using applied electrical currents. Due to spin-orbit coupling in environments with particular crystalline or structural symmetries, the electric current can induce an effective magnetic field with a sign that alternates on the lengthscale of the unit cell. The staggered effective field provides an efficient mechanism for switching antiferromagnetic domains and moving antiferromagnetic domain walls, with writing speeds in the terahertz regime.

关键词: spintronics, antiferromagnetic, current-induced torques, magnetic domains

Abstract:

Antiferromagnets offer considerable potential for electronic device applications. This article reviews recent demonstrations of spin manipulation in antiferromagnetic devices using applied electrical currents. Due to spin-orbit coupling in environments with particular crystalline or structural symmetries, the electric current can induce an effective magnetic field with a sign that alternates on the lengthscale of the unit cell. The staggered effective field provides an efficient mechanism for switching antiferromagnetic domains and moving antiferromagnetic domain walls, with writing speeds in the terahertz regime.

Key words: spintronics, antiferromagnetic, current-induced torques, magnetic domains

中图分类号:  (Galvanomagnetic and other magnetotransport effects)

  • 72.15.Gd
75.50.Ee (Antiferromagnetics) 75.60.Ch (Domain walls and domain structure) 85.75.-d (Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)