Optoelectronic properties of single-crystalline GaInAsSb quaternary alloy nanowires

doi:10.1088/1674-1056/27/7/078101

中国物理B ›› 2018, Vol. 27 ›› Issue (7): 78101-078101.doi: 10.1088/1674-1056/27/7/078101

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Optoelectronic properties of single-crystalline GaInAsSb quaternary alloy nanowires

Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronic Science, Hunan University, Changsha 410082, China

收稿日期:2017-12-27 修回日期:2018-04-11 出版日期:2018-07-05 发布日期:2018-07-05
通讯作者: Xiao-Li Zhu, Xiu-Juan Zhuang E-mail:zhuxiaoli@hnu.edu.cn;zhuangxj@hnu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 51525202, 61505051, 1137049, 61474040, and 61635001), the Aid Program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province, China, and the Fundamental Research Funds for the Central Universities, China.

Optoelectronic properties of single-crystalline GaInAsSb quaternary alloy nanowires

Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronic Science, Hunan University, Changsha 410082, China

Received:2017-12-27 Revised:2018-04-11 Online:2018-07-05 Published:2018-07-05
Contact: Xiao-Li Zhu, Xiu-Juan Zhuang E-mail:zhuxiaoli@hnu.edu.cn;zhuangxj@hnu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 51525202, 61505051, 1137049, 61474040, and 61635001), the Aid Program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province, China, and the Fundamental Research Funds for the Central Universities, China.

摘要/Abstract

摘要： Bandgap engineering of semiconductor nanomaterials is critical for their applications in nanoelectronics, optoelectronics, and photonics. Here we report, for the first time, the growth of single-crystalline quaternary alloyed Ga_0.75In_0.25As_0.49Sb_0.51 nanowires via a chemical-vapor-deposition method. The synthesized nanowires have a uniform composition distribution along the growth direction, with a zinc-blende structure. In the photoluminescence investigation, these quaternary alloyed semiconductor nanowires show a strong band edge light emission at 1950 nm (0.636 eV). Photodetectors based on these alloy nanowires show a strong light response in the near-infrared region (980 nm) with the external quantum efficiency of 2.0×10⁴% and the responsivity of 158 A/W. These novel near-infrared photodetectors may find promising applications in integrated infrared photodetection, information communication, and processing.

关键词: GaInAsSb nanowire, quaternary alloy, near-infrared photodetector

Abstract: Bandgap engineering of semiconductor nanomaterials is critical for their applications in nanoelectronics, optoelectronics, and photonics. Here we report, for the first time, the growth of single-crystalline quaternary alloyed Ga_0.75In_0.25As_0.49Sb_0.51 nanowires via a chemical-vapor-deposition method. The synthesized nanowires have a uniform composition distribution along the growth direction, with a zinc-blende structure. In the photoluminescence investigation, these quaternary alloyed semiconductor nanowires show a strong band edge light emission at 1950 nm (0.636 eV). Photodetectors based on these alloy nanowires show a strong light response in the near-infrared region (980 nm) with the external quantum efficiency of 2.0×10⁴% and the responsivity of 158 A/W. These novel near-infrared photodetectors may find promising applications in integrated infrared photodetection, information communication, and processing.

Key words: GaInAsSb nanowire, quaternary alloy, near-infrared photodetector

中图分类号: (Nanowires)

81.07.Gf

74.70.Dd (Ternary, quaternary, and multinary compounds) 85.60.Gz (Photodetectors (including infrared and CCD detectors))

李梦姿, 陈新亮, 李洪来, 张学红, 祁朝阳, 王晓霞, 范鹏, 张清林, 朱小莉, 庄秀娟. Optoelectronic properties of single-crystalline GaInAsSb quaternary alloy nanowires[J]. 中国物理B, 2018, 27(7): 78101-078101.

Meng-Zi Li(李梦姿), Xin-Liang Chen(陈新亮), Hong-Lai Li(李洪来), Xue-Hong Zhang(张学红), Zhao-Yang Qi(祁朝阳), Xiao-Xia Wang(王晓霞), Peng Fan(范鹏), Qing-Lin Zhang(张清林), Xiao-Li Zhu(朱小莉), Xiu-Juan Zhuang(庄秀娟). Optoelectronic properties of single-crystalline GaInAsSb quaternary alloy nanowires[J]. Chin. Phys. B, 2018, 27(7): 78101-078101.

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Optoelectronic properties of single-crystalline GaInAsSb quaternary alloy nanowires

Optoelectronic properties of single-crystalline GaInAsSb quaternary alloy nanowires

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