Electronic transport properties of Co cluster-decorated graphene

doi:10.1088/1674-1056/27/6/067304

中国物理B ›› 2018, Vol. 27 ›› Issue (6): 67304-067304.doi: 10.1088/1674-1056/27/6/067304

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Electronic transport properties of Co cluster-decorated graphene

Chao-Yi Cai(蔡超逸), Jian-Hao Chen(陈剑豪)

1 International Center for Quantum Materials, Peking University, Beijing 100871, China;
2 Collaborative Innovation Center of Quantum Matter, Beijing 100871, China

收稿日期:2018-05-02 修回日期:2018-05-07 出版日期:2018-06-05 发布日期:2018-06-05
通讯作者: Jian-Hao Chen E-mail:chenjianhao@pku.edu.cn
基金资助:
Project supported by the National Basic Research Program of China (Grant Nos.2013CB921900 and 2014CB920900),the National Natural Science Foundation of China (Grant No.11374021),and the National Key Research and Development Program of China (Grant No.2018YFA0305604).

Electronic transport properties of Co cluster-decorated graphene

Chao-Yi Cai(蔡超逸)¹, Jian-Hao Chen(陈剑豪)^1,2

1 International Center for Quantum Materials, Peking University, Beijing 100871, China;
2 Collaborative Innovation Center of Quantum Matter, Beijing 100871, China

Received:2018-05-02 Revised:2018-05-07 Online:2018-06-05 Published:2018-06-05
Contact: Jian-Hao Chen E-mail:chenjianhao@pku.edu.cn
Supported by:
Project supported by the National Basic Research Program of China (Grant Nos.2013CB921900 and 2014CB920900),the National Natural Science Foundation of China (Grant No.11374021),and the National Key Research and Development Program of China (Grant No.2018YFA0305604).

摘要/Abstract

摘要：

Interactions of magnetic elements with graphene may lead to various electronic states that have potential applications. We report an in-situ experiment in which the quantum transport properties of graphene are measured with increasing cobalt coverage in continuous ultra-high vacuum environment. The results show that e-beam deposited cobalt forms clusters on the surface of graphene, even at low sample temperatures. Scattering of charge carriers by the absorbed cobalt clusters results in the disappearance of the Shubnikov-de Haas (SdH) oscillations and the appearance of negative magnetoresistance (MR) which shows no sign of saturation up to an applied magnetic field of 9 T. We propose that these observations could originate from quantum interference driven by cobalt disorder and can be explained by the weak localization theory.

关键词: in situ quantum transport, negative magnetoresistance, weak localization

Abstract:

Key words: in situ quantum transport, negative magnetoresistance, weak localization

中图分类号: (Electronic transport in nanoscale materials and structures)

73.63.-b

73.20.Fz (Weak or Anderson localization) 75.70.Ak (Magnetic properties of monolayers and thin films) 85.40.Ry (Impurity doping, diffusion and ion implantation technology)

蔡超逸, 陈剑豪. Electronic transport properties of Co cluster-decorated graphene[J]. 中国物理B, 2018, 27(6): 67304-067304.

Chao-Yi Cai(蔡超逸), Jian-Hao Chen(陈剑豪). Electronic transport properties of Co cluster-decorated graphene[J]. Chin. Phys. B, 2018, 27(6): 67304-067304.

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Electronic transport properties of Co cluster-decorated graphene

Electronic transport properties of Co cluster-decorated graphene

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