Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors

doi:10.1088/1674-1056/26/9/097104

中国物理B ›› 2017, Vol. 26 ›› Issue (9): 97104-097104.doi: 10.1088/1674-1056/26/9/097104

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors

Yan Liu(刘艳), Zhao-Jun Lin(林兆军), Yuan-Jie Lv(吕元杰), Peng Cui(崔鹏), Chen Fu(付晨), Ruilong Han(韩瑞龙), Yu Huo(霍宇), Ming Yang(杨铭)

1 School of Microelectronics, Shandong University, Jinan 250100, China;
2 National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China

收稿日期:2017-01-14 修回日期:2017-04-23 出版日期:2017-09-05 发布日期:2017-09-05
通讯作者: Zhao-Jun Lin E-mail:linzj@sdu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11174182, 11574182, and 61306113) and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20110131110005).

Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors

Yan Liu(刘艳)¹, Zhao-Jun Lin(林兆军)¹, Yuan-Jie Lv(吕元杰)², Peng Cui(崔鹏)¹, Chen Fu(付晨)¹, Ruilong Han(韩瑞龙)¹, Yu Huo(霍宇)¹, Ming Yang(杨铭)¹

1 School of Microelectronics, Shandong University, Jinan 250100, China;
2 National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China

Received:2017-01-14 Revised:2017-04-23 Online:2017-09-05 Published:2017-09-05
Contact: Zhao-Jun Lin E-mail:linzj@sdu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11174182, 11574182, and 61306113) and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20110131110005).

摘要/Abstract

摘要： The parasitic source resistance (R_S) of AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) is studied in the temperature range 300-500 K. By using the measured R_S and both capacitance-voltage (C-V) and current-voltage (I-V) characteristics for the fabricated device at 300, 350, 400, 450, and 500 K, it is found that the polarization Coulomb field (PCF) scattering exhibits a significant impact on R_S at the above-mentioned different temperatures. Furthermore, in the AlGaN/AlN/GaN HFETs, the interaction between the additional positive polarization charges underneath the gate contact and the additional negative polarization charges near the source Ohmic contact, which is related to the PCF scattering, is verified during the variable-temperature study of R_S.

关键词: AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs), parasitic source resistance, polarization Coulomb field scattering

Abstract: The parasitic source resistance (R_S) of AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) is studied in the temperature range 300-500 K. By using the measured R_S and both capacitance-voltage (C-V) and current-voltage (I-V) characteristics for the fabricated device at 300, 350, 400, 450, and 500 K, it is found that the polarization Coulomb field (PCF) scattering exhibits a significant impact on R_S at the above-mentioned different temperatures. Furthermore, in the AlGaN/AlN/GaN HFETs, the interaction between the additional positive polarization charges underneath the gate contact and the additional negative polarization charges near the source Ohmic contact, which is related to the PCF scattering, is verified during the variable-temperature study of R_S.

Key words: AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs), parasitic source resistance, polarization Coulomb field scattering

中图分类号: (III-V semiconductors)

71.55.Eq

73.40.Cg (Contact resistance, contact potential) 51.50.+v (Electrical properties)

刘艳, 林兆军, 吕元杰, 崔鹏, 付晨, 韩瑞龙, 霍宇, 杨铭. Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors[J]. 中国物理B, 2017, 26(9): 97104-097104.

Yan Liu(刘艳), Zhao-Jun Lin(林兆军), Yuan-Jie Lv(吕元杰), Peng Cui(崔鹏), Chen Fu(付晨), Ruilong Han(韩瑞龙), Yu Huo(霍宇), Ming Yang(杨铭). Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors[J]. Chin. Phys. B, 2017, 26(9): 97104-097104.

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Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors

Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors

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