中国物理B ›› 2017, Vol. 26 ›› Issue (9): 94101-094101.doi: 10.1088/1674-1056/26/9/094101

• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇    下一篇

Design of double-layer active frequency-selective surface with PIN diodes for stealth radome

Bin Deng(邓斌), Jian Chen(陈健)   

  1. 1 Department of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
    2 Nanjing Research Institute of Electronics Technology, Nanjing 210039, China
  • 收稿日期:2017-03-13 修回日期:2017-05-18 出版日期:2017-09-05 发布日期:2017-09-05
  • 通讯作者: Bin Deng E-mail:dengbin19820925@sohu.com
  • 基金资助:
    Project supported by the National Basic Resarch Program of China (Grant No. 2014CB339800) and the National Natural Science Foundation of China (Grant No. 11173015).

Design of double-layer active frequency-selective surface with PIN diodes for stealth radome

Bin Deng(邓斌)1,2, Jian Chen(陈健)1   

  1. 1 Department of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
    2 Nanjing Research Institute of Electronics Technology, Nanjing 210039, China
  • Received:2017-03-13 Revised:2017-05-18 Online:2017-09-05 Published:2017-09-05
  • Contact: Bin Deng E-mail:dengbin19820925@sohu.com
  • Supported by:
    Project supported by the National Basic Resarch Program of China (Grant No. 2014CB339800) and the National Natural Science Foundation of China (Grant No. 11173015).

摘要: An experimental double-layer active frequency-selective surface (AFSS) for stealth radome is proposed. The AFSS is a planar structure which is composed of a fixed frequency-selective surface (FSS), a PIN diodes array, and a DC bias network. The AFSS elements incorporating switchable PIN diodes are discussed. By means of controlling the DC bias network, it is possible to switch the frequency response for reflecting and transmitting. Measured and simulated data validate that when the incidence angle varies from 0° to 30° the AFSS produces more than -11.5 dB isolation across 6-18 GHz when forward biased. The insertion loss (IL) is less than 0.5 dB across 10-11 GHz when reverse biased.

关键词: frequency-selective surface (FSS), active frequency-selective surface (AFSS), PIN diode, stealth radome

Abstract: An experimental double-layer active frequency-selective surface (AFSS) for stealth radome is proposed. The AFSS is a planar structure which is composed of a fixed frequency-selective surface (FSS), a PIN diodes array, and a DC bias network. The AFSS elements incorporating switchable PIN diodes are discussed. By means of controlling the DC bias network, it is possible to switch the frequency response for reflecting and transmitting. Measured and simulated data validate that when the incidence angle varies from 0° to 30° the AFSS produces more than -11.5 dB isolation across 6-18 GHz when forward biased. The insertion loss (IL) is less than 0.5 dB across 10-11 GHz when reverse biased.

Key words: frequency-selective surface (FSS), active frequency-selective surface (AFSS), PIN diode, stealth radome

中图分类号:  (Electromagnetic wave propagation; radiowave propagation)

  • 41.20.Jb
73.90.+f (Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures) 84.40.Az (Waveguides, transmission lines, striplines)