中国物理B ›› 2017, Vol. 26 ›› Issue (3): 36804-036804.doi: 10.1088/1674-1056/26/3/036804

所属专题： TOPICAL REVIEW — 2D materials: physics and device applications

• TOPICAL REVIEW—2D materials: physics and device applications • 上一篇    下一篇

A review for compact model of graphene field-effect transistors

Nianduan Lu(卢年端), Lingfei Wang(汪令飞), Ling Li(李泠), Ming Liu(刘明)   

  1. 1 Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
    2 University of Chinese Academy of Sciences, Beijing 100049, China;
    3 Jiangsu National Synergetic Innovation Center for Advanced Materials(SICAM), Nanjing 210009, China
  • 收稿日期:2016-12-02 修回日期:2017-02-14 出版日期:2017-03-05 发布日期:2017-03-05
  • 通讯作者: Ling Li E-mail:lingli@ime.ac.cn
  • 基金资助:

    Project supported by the Opening Project of Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, the National Natural Science Foundation of China (Grant No. 61574166), the National Basic Research Program of China (Grant No. 2013CBA01604), the National Key Research and Development Program of China (Grant No. 2016YFA0201802), and the Beijing Training Project for the Leading Talents in S&T, China (Grant No. Z151100000315008).

A review for compact model of graphene field-effect transistors

Nianduan Lu(卢年端)1,2,3, Lingfei Wang(汪令飞)1,3, Ling Li(李泠)1,2,3, Ming Liu(刘明)1,2,3   

  1. 1 Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
    2 University of Chinese Academy of Sciences, Beijing 100049, China;
    3 Jiangsu National Synergetic Innovation Center for Advanced Materials(SICAM), Nanjing 210009, China
  • Received:2016-12-02 Revised:2017-02-14 Online:2017-03-05 Published:2017-03-05
  • Contact: Ling Li E-mail:lingli@ime.ac.cn
  • Supported by:

    Project supported by the Opening Project of Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, the National Natural Science Foundation of China (Grant No. 61574166), the National Basic Research Program of China (Grant No. 2013CBA01604), the National Key Research and Development Program of China (Grant No. 2016YFA0201802), and the Beijing Training Project for the Leading Talents in S&T, China (Grant No. Z151100000315008).

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摘要：

Graphene has attracted enormous interests due to its unique physical, mechanical, and electrical properties. Specially, graphene-based field-effect transistors (FETs) have evolved rapidly and are now considered as an option for conventional silicon devices. As a critical step in the design cycle of modern IC products, compact model refers to the development of models for integrated semiconductor devices for use in circuit simulations. The purpose of this review is to provide a theoretical description of current compact model of graphene field-effect transistors. Special attention is devoted to the charge sheet model, drift-diffusion model, Boltzmann equation, density of states (DOS), and surface-potential-based compact model. Finally, an outlook of this field is briefly discussed.

关键词: two-dimensional material, graphene, field-effect transistor, compact model

Abstract:

Graphene has attracted enormous interests due to its unique physical, mechanical, and electrical properties. Specially, graphene-based field-effect transistors (FETs) have evolved rapidly and are now considered as an option for conventional silicon devices. As a critical step in the design cycle of modern IC products, compact model refers to the development of models for integrated semiconductor devices for use in circuit simulations. The purpose of this review is to provide a theoretical description of current compact model of graphene field-effect transistors. Special attention is devoted to the charge sheet model, drift-diffusion model, Boltzmann equation, density of states (DOS), and surface-potential-based compact model. Finally, an outlook of this field is briefly discussed.

Key words: two-dimensional material, graphene, field-effect transistor, compact model

中图分类号:  (Semiconductors)

  • 68.35.bg
72.80.Vp (Electronic transport in graphene)