Fluid simulation of the pulsed bias effect on inductively coupled nitrogen discharges for low-voltage plasma immersion ion implantation

doi:10.1088/1674-1056/26/1/015201

中国物理B ›› 2017, Vol. 26 ›› Issue (1): 15201-015201.doi: 10.1088/1674-1056/26/1/015201

• PHYSICS OF GASES, PLASMAS, AND ELECTRIC DISCHARGES • 上一篇下一篇

Fluid simulation of the pulsed bias effect on inductively coupled nitrogen discharges for low-voltage plasma immersion ion implantation

Xiao-Yan Sun(孙晓艳), Yu-Ru Zhang(张钰如), Xue-Chun Li(李雪春), You-Nian Wang(王友年)

Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams(Ministry of Education), School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, China

收稿日期:2016-07-23 修回日期:2016-09-01 出版日期:2017-01-05 发布日期:2017-01-05
通讯作者: You-Nian Wang E-mail:ynwang@dlut.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11175034, 11335004, and 11405019) and the Important National Science and Technology Specific Project of China (Grant No. 2011 ZX 02403-001).

Fluid simulation of the pulsed bias effect on inductively coupled nitrogen discharges for low-voltage plasma immersion ion implantation

Xiao-Yan Sun(孙晓艳), Yu-Ru Zhang(张钰如), Xue-Chun Li(李雪春), You-Nian Wang(王友年)

Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams(Ministry of Education), School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, China

Received:2016-07-23 Revised:2016-09-01 Online:2017-01-05 Published:2017-01-05
Contact: You-Nian Wang E-mail:ynwang@dlut.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11175034, 11335004, and 11405019) and the Important National Science and Technology Specific Project of China (Grant No. 2011 ZX 02403-001).

摘要/Abstract

摘要： Planar radio frequency inductively coupled plasmas (ICP) are employed for low-voltage ion implantation processes, with capacitive pulse biasing of the substrate for modulation of the ion energy. In this work, a two-dimensional (2D) self-consistent fluid model has been employed to investigate the influence of the pulsed bias power on the nitrogen plasmas for various bias voltages and pulse frequencies. The results indicate that the plasma density as well as the inductive power density increase significantly when the bias voltage varies from 0 V to -4000 V, due to the heating of the capacitive field caused by the bias power. The N⁺ fraction increases rapidly to a maximum at the beginning of the power-on time, and then it decreases and reaches the steady state at the end of the glow period. Moreover, it increases with the bias voltage during the power-on time, whereas the N₂⁺ fraction exhibits a reverse behavior. When the pulse frequency increases to 25 kHz and 40 kHz, the plasma steady state cannot be obtained, and a rapid decrease of the ion density at the substrate surface at the beginning of the glow period is observed.

关键词: fluid simulation, low-voltage plasma immersion ion implantation, N₂ inductive discharge

Abstract: Planar radio frequency inductively coupled plasmas (ICP) are employed for low-voltage ion implantation processes, with capacitive pulse biasing of the substrate for modulation of the ion energy. In this work, a two-dimensional (2D) self-consistent fluid model has been employed to investigate the influence of the pulsed bias power on the nitrogen plasmas for various bias voltages and pulse frequencies. The results indicate that the plasma density as well as the inductive power density increase significantly when the bias voltage varies from 0 V to -4000 V, due to the heating of the capacitive field caused by the bias power. The N⁺ fraction increases rapidly to a maximum at the beginning of the power-on time, and then it decreases and reaches the steady state at the end of the glow period. Moreover, it increases with the bias voltage during the power-on time, whereas the N₂⁺ fraction exhibits a reverse behavior. When the pulse frequency increases to 25 kHz and 40 kHz, the plasma steady state cannot be obtained, and a rapid decrease of the ion density at the substrate surface at the beginning of the glow period is observed.

Key words: fluid simulation, low-voltage plasma immersion ion implantation, N₂ inductive discharge

中图分类号: (Two-fluid and multi-fluid plasmas)

52.30.Ex

52.65.-y (Plasma simulation) 52.50.Qt (Plasma heating by radio-frequency fields; ICR, ICP, helicons)

孙晓艳, 张钰如, 李雪春, 王友年. Fluid simulation of the pulsed bias effect on inductively coupled nitrogen discharges for low-voltage plasma immersion ion implantation[J]. 中国物理B, 2017, 26(1): 15201-015201.

Xiao-Yan Sun(孙晓艳), Yu-Ru Zhang(张钰如), Xue-Chun Li(李雪春), You-Nian Wang(王友年). Fluid simulation of the pulsed bias effect on inductively coupled nitrogen discharges for low-voltage plasma immersion ion implantation[J]. Chin. Phys. B, 2017, 26(1): 15201-015201.

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Fluid simulation of the pulsed bias effect on inductively coupled nitrogen discharges for low-voltage plasma immersion ion implantation

Fluid simulation of the pulsed bias effect on inductively coupled nitrogen discharges for low-voltage plasma immersion ion implantation

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