中国物理B ›› 2016, Vol. 25 ›› Issue (11): 117805-117805.doi: 10.1088/1674-1056/25/11/117805

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Effect of Mo capping layers thickness on the perpendicular magnetic anisotropy in MgO/CoFeB based top magnetic tunnel junction structure

Yi Liu(刘毅), Kai-Gui Zhu(朱开贵), Hui-Cai Zhong(钟汇才), Zheng-Yong Zhu(朱正勇), Tao Yu(于涛), Su-De Ma(马苏德)   

  1. 1 School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191, China;
    2 Integrated Circuit Advanced Process Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
    3 Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
    4 Key Laboratory of Micro-nano Measurement-Manipulation and Physics, Ministry of Education, Beihang University, Beijing 100191, China
  • 收稿日期:2016-07-04 修回日期:2016-08-10 出版日期:2016-11-05 发布日期:2016-11-05
  • 通讯作者: Zheng-Yong Zhu E-mail:zhuzhengyong@ime.ac.cn
  • 基金资助:
    Project supported by the National Fundamental Research Program of China (Grant No. 2011CB921804) and Beijing Key Subject Foundation of Condensed Matter Physics, China (Grant No. 0114023).

Effect of Mo capping layers thickness on the perpendicular magnetic anisotropy in MgO/CoFeB based top magnetic tunnel junction structure

Yi Liu(刘毅)1, Kai-Gui Zhu(朱开贵)1,4, Hui-Cai Zhong(钟汇才)2, Zheng-Yong Zhu(朱正勇)3, Tao Yu(于涛)1, Su-De Ma(马苏德)1   

  1. 1 School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191, China;
    2 Integrated Circuit Advanced Process Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
    3 Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
    4 Key Laboratory of Micro-nano Measurement-Manipulation and Physics, Ministry of Education, Beihang University, Beijing 100191, China
  • Received:2016-07-04 Revised:2016-08-10 Online:2016-11-05 Published:2016-11-05
  • Contact: Zheng-Yong Zhu E-mail:zhuzhengyong@ime.ac.cn
  • Supported by:
    Project supported by the National Fundamental Research Program of China (Grant No. 2011CB921804) and Beijing Key Subject Foundation of Condensed Matter Physics, China (Grant No. 0114023).

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摘要： A detailed study of the magnetic characterizations of the top structure MgO/CoFeB/Mo is presented. The samples show strong perpendicular magnetic anisotropy (PMA) when the thickness of CoFeB is 0.9 nm and 1.1 nm. The saturation magnetic moment and interface anisotropy constant are 1566 emu/cm3 and 3.75 erg/cm2, respectively. The magnetic dead layer (MDL) is about 0.23 nm in this system. Furthermore, strong capping layer thickness dependence is also observed. The strong PMA of 1.1 nm CoFeB only exists in a Mo cap layer thickness window of 1.2-2 nm. To maintain PMA, the metal layer could not be too thin or thick in these multilayers. The oxidation and diffusion of the metal capping layer should be respectively responsibility for the degradation of PMA in these thin or thick metal capping layer samples.

关键词: perpendicular magnetic anisotropy, capping layer, effective magnetic anisotropy, magnetic tunnel junction

Abstract: A detailed study of the magnetic characterizations of the top structure MgO/CoFeB/Mo is presented. The samples show strong perpendicular magnetic anisotropy (PMA) when the thickness of CoFeB is 0.9 nm and 1.1 nm. The saturation magnetic moment and interface anisotropy constant are 1566 emu/cm3 and 3.75 erg/cm2, respectively. The magnetic dead layer (MDL) is about 0.23 nm in this system. Furthermore, strong capping layer thickness dependence is also observed. The strong PMA of 1.1 nm CoFeB only exists in a Mo cap layer thickness window of 1.2-2 nm. To maintain PMA, the metal layer could not be too thin or thick in these multilayers. The oxidation and diffusion of the metal capping layer should be respectively responsibility for the degradation of PMA in these thin or thick metal capping layer samples.

Key words: perpendicular magnetic anisotropy, capping layer, effective magnetic anisotropy, magnetic tunnel junction

中图分类号:  (Multilayers; superlattices; photonic structures; metamaterials)

  • 78.67.Pt
75.70.Cn (Magnetic properties of interfaces (multilayers, superlattices, heterostructures)) 75.70.Rf (Surface magnetism) 75.60.Nt (Magnetic annealing and temperature-hysteresis effects)