Preparation of few-layer graphene-capped boron nanowires and their field emission properties

doi:10.1088/1674-1056/25/7/078101

中国物理B ›› 2016, Vol. 25 ›› Issue (7): 78101-078101.doi: 10.1088/1674-1056/25/7/078101

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Preparation of few-layer graphene-capped boron nanowires and their field emission properties

Yong-Xin Zhang(张永欣), Fei Liu(刘飞), Cheng-Min Shen(申承民), Tian-Zhong Yang(杨天中), Jun Li(李军), Shao-Zhi Deng(邓少芝), Ning-Sheng Xu(许宁生), Hong-Jun Gao(高鸿钧)

1 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, and School of Microelectronics, Sun Yat-sen University, Guangzhou 510275, China

收稿日期:2016-03-07 修回日期:2016-03-16 出版日期:2016-07-05 发布日期:2016-07-05
通讯作者: Cheng-Min Shen, Hong-Jun Gao E-mail:cmshen@iphy.ac.cn;hjgao@iphy.ac.cn
基金资助:
Project supported by the National Basic Research Program of China (Grant No. 2013CB933604), the National Natural Science Foundation of China (Grant No. 51572290), and the Chinese Academy of Sciences (Grant Nos. 1731300500015 and XDB07030100).

Preparation of few-layer graphene-capped boron nanowires and their field emission properties

Yong-Xin Zhang(张永欣)¹, Fei Liu(刘飞)², Cheng-Min Shen(申承民)¹, Tian-Zhong Yang(杨天中)¹, Jun Li(李军)¹, Shao-Zhi Deng(邓少芝)², Ning-Sheng Xu(许宁生)², Hong-Jun Gao(高鸿钧)¹

1 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, and School of Microelectronics, Sun Yat-sen University, Guangzhou 510275, China

Received:2016-03-07 Revised:2016-03-16 Online:2016-07-05 Published:2016-07-05
Contact: Cheng-Min Shen, Hong-Jun Gao E-mail:cmshen@iphy.ac.cn;hjgao@iphy.ac.cn
Supported by:
Project supported by the National Basic Research Program of China (Grant No. 2013CB933604), the National Natural Science Foundation of China (Grant No. 51572290), and the Chinese Academy of Sciences (Grant Nos. 1731300500015 and XDB07030100).

摘要/Abstract

摘要：

Large-area boron nanowire (BNW) films were fabricated on the Si(111) substrate by chemical vapor deposition (CVD). The average diameter of the BNWs is about 20 nm, with lengths of 5-10 μm. Then, graphene-capped boron nanowires (GC-BNWs) were obtained by microwave plasma chemical vapor deposition (MPCVD). Characterization by scanning electron microscopy indicates that few-layer graphene covers the surface of the boron nanowires. Field emission measurements of the BNWs and GC-BNW films show that the GC-BNW films have a lower turn-on electric field than the BNW films.

关键词: boron nanowires, graphene-capped boron nanowires, field emission properties

Abstract:

Key words: boron nanowires, graphene-capped boron nanowires, field emission properties

中图分类号: (Nanowires)

81.07.Gf

81.05.ue (Graphene) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 85.45.Fd (Field emission displays (FEDs))

张永欣, 刘飞, 申承民, 杨天中, 李军, 邓少芝, 许宁生, 高鸿钧. Preparation of few-layer graphene-capped boron nanowires and their field emission properties[J]. 中国物理B, 2016, 25(7): 78101-078101.

Yong-Xin Zhang(张永欣), Fei Liu(刘飞), Cheng-Min Shen(申承民), Tian-Zhong Yang(杨天中), Jun Li(李军), Shao-Zhi Deng(邓少芝), Ning-Sheng Xu(许宁生), Hong-Jun Gao(高鸿钧). Preparation of few-layer graphene-capped boron nanowires and their field emission properties[J]. Chin. Phys. B, 2016, 25(7): 78101-078101.

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Preparation of few-layer graphene-capped boron nanowires and their field emission properties

Preparation of few-layer graphene-capped boron nanowires and their field emission properties

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