Covalent bonding and J-J mixing effects on the EPR parameters of Er3+ ions in GaN crystal

doi:10.1088/1674-1056/25/7/077601

中国物理B ›› 2016, Vol. 25 ›› Issue (7): 77601-077601.doi: 10.1088/1674-1056/25/7/077601

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Covalent bonding and J-J mixing effects on the EPR parameters of Er³⁺ ions in GaN crystal

Rui-Peng Chai(柴瑞鹏), Long Li(李隆), Liang Liang(梁良), Qing Pang(庞庆)

Department of Physics, Xi'an University of Architecture and Technology, Xi'an 710055, China

收稿日期:2015-12-01 修回日期:2016-03-18 出版日期:2016-07-05 发布日期:2016-07-05
通讯作者: Rui-Peng Chai E-mail:chairuipeng2005@163.com
基金资助:
Project supported by the Foundation of Education Department of Shaanxi Province, China (Grant No. 16JK1461).

Covalent bonding and J-J mixing effects on the EPR parameters of Er³⁺ ions in GaN crystal

Rui-Peng Chai(柴瑞鹏), Long Li(李隆), Liang Liang(梁良), Qing Pang(庞庆)

Department of Physics, Xi'an University of Architecture and Technology, Xi'an 710055, China

Received:2015-12-01 Revised:2016-03-18 Online:2016-07-05 Published:2016-07-05
Contact: Rui-Peng Chai E-mail:chairuipeng2005@163.com
Supported by:
Project supported by the Foundation of Education Department of Shaanxi Province, China (Grant No. 16JK1461).

摘要/Abstract

摘要：

The EPR parameters of trivalent Er³⁺ ions doped in hexagonal GaN crystal have been studied by diagonalizing the 364×364 complete energy matrices. The results indicate that the resonance ground states may be derived from the Kramers doublet Γ₆. The EPR g-factors may be ascribed to the stronger covalent bonding and nephelauxetic effects compared with other rare-earth doped complexes, as a result of the mismatch of ionic radii of the impurity Er³⁺ ion and the replaced Ga³⁺ ion apart from the intrinsic covalency of host GaN. Furthermore, the J-J mixing effects on the EPR parameters from the high-lying manifolds have been evaluated. It is found that the dominant J-J mixing contribution is from the manifold ²K_15/2, which accounts for about 2.5%. The next important J-J contribution arises from the crystal-field mixture between the ground state ⁴I_15/2 and the first excited state ⁴I_13/2, and is usually less than 0.2%. The contributions from the rest states may be ignored.

关键词: EPR parameters, covalent bonding effect, J-J mixing effect, rare-earth ion Er³⁺

Abstract:

Key words: EPR parameters, covalent bonding effect, J-J mixing effect, rare-earth ion Er³⁺

中图分类号: (Electron paramagnetic resonance and relaxation)

76.30.-v

75.10.Dg (Crystal-field theory and spin Hamiltonians) 31.15.-p (Calculations and mathematical techniques in atomic and molecular physics) 76.30.Kg (Rare-earth ions and impurities)

柴瑞鹏, 李隆, 梁良, 庞庆. Covalent bonding and J-J mixing effects on the EPR parameters of Er³⁺ ions in GaN crystal[J]. 中国物理B, 2016, 25(7): 77601-077601.

Rui-Peng Chai(柴瑞鹏), Long Li(李隆), Liang Liang(梁良), Qing Pang(庞庆). Covalent bonding and J-J mixing effects on the EPR parameters of Er³⁺ ions in GaN crystal[J]. Chin. Phys. B, 2016, 25(7): 77601-077601.

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Covalent bonding and J-J mixing effects on the EPR parameters of Er³⁺ ions in GaN crystal

Covalent bonding and J-J mixing effects on the EPR parameters of Er³⁺ ions in GaN crystal

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