中国物理B ›› 2016, Vol. 25 ›› Issue (7): 77601-077601.doi: 10.1088/1674-1056/25/7/077601

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Covalent bonding and J-J mixing effects on the EPR parameters of Er3+ ions in GaN crystal

Rui-Peng Chai(柴瑞鹏), Long Li(李隆), Liang Liang(梁良), Qing Pang(庞庆)   

  1. Department of Physics, Xi'an University of Architecture and Technology, Xi'an 710055, China
  • 收稿日期:2015-12-01 修回日期:2016-03-18 出版日期:2016-07-05 发布日期:2016-07-05
  • 通讯作者: Rui-Peng Chai E-mail:chairuipeng2005@163.com
  • 基金资助:

    Project supported by the Foundation of Education Department of Shaanxi Province, China (Grant No. 16JK1461).

Covalent bonding and J-J mixing effects on the EPR parameters of Er3+ ions in GaN crystal

Rui-Peng Chai(柴瑞鹏), Long Li(李隆), Liang Liang(梁良), Qing Pang(庞庆)   

  1. Department of Physics, Xi'an University of Architecture and Technology, Xi'an 710055, China
  • Received:2015-12-01 Revised:2016-03-18 Online:2016-07-05 Published:2016-07-05
  • Contact: Rui-Peng Chai E-mail:chairuipeng2005@163.com
  • Supported by:

    Project supported by the Foundation of Education Department of Shaanxi Province, China (Grant No. 16JK1461).

摘要:

The EPR parameters of trivalent Er3+ ions doped in hexagonal GaN crystal have been studied by diagonalizing the 364×364 complete energy matrices. The results indicate that the resonance ground states may be derived from the Kramers doublet Γ6. The EPR g-factors may be ascribed to the stronger covalent bonding and nephelauxetic effects compared with other rare-earth doped complexes, as a result of the mismatch of ionic radii of the impurity Er3+ ion and the replaced Ga3+ ion apart from the intrinsic covalency of host GaN. Furthermore, the J-J mixing effects on the EPR parameters from the high-lying manifolds have been evaluated. It is found that the dominant J-J mixing contribution is from the manifold 2K15/2, which accounts for about 2.5%. The next important J-J contribution arises from the crystal-field mixture between the ground state 4I15/2 and the first excited state 4I13/2, and is usually less than 0.2%. The contributions from the rest states may be ignored.

关键词: EPR parameters, covalent bonding effect, J-J mixing effect, rare-earth ion Er3+

Abstract:

The EPR parameters of trivalent Er3+ ions doped in hexagonal GaN crystal have been studied by diagonalizing the 364×364 complete energy matrices. The results indicate that the resonance ground states may be derived from the Kramers doublet Γ6. The EPR g-factors may be ascribed to the stronger covalent bonding and nephelauxetic effects compared with other rare-earth doped complexes, as a result of the mismatch of ionic radii of the impurity Er3+ ion and the replaced Ga3+ ion apart from the intrinsic covalency of host GaN. Furthermore, the J-J mixing effects on the EPR parameters from the high-lying manifolds have been evaluated. It is found that the dominant J-J mixing contribution is from the manifold 2K15/2, which accounts for about 2.5%. The next important J-J contribution arises from the crystal-field mixture between the ground state 4I15/2 and the first excited state 4I13/2, and is usually less than 0.2%. The contributions from the rest states may be ignored.

Key words: EPR parameters, covalent bonding effect, J-J mixing effect, rare-earth ion Er3+

中图分类号:  (Electron paramagnetic resonance and relaxation)

  • 76.30.-v
75.10.Dg (Crystal-field theory and spin Hamiltonians) 31.15.-p (Calculations and mathematical techniques in atomic and molecular physics) 76.30.Kg (Rare-earth ions and impurities)