中国物理B ›› 2016, Vol. 25 ›› Issue (7): 76105-076105.doi: 10.1088/1674-1056/25/7/076105

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Influence of nitrogen and magnesium doping on the properties of ZnO films

Dong-hua Li(李东华), Hui-Qiong Wang(王惠琼), Hua Zhou(周华), Ya-Ping Li(李亚平), Zheng Huang(黄政), Jin-Cheng Zheng(郑金成), Jia-Ou Wang(王嘉鸥), Hai-jie Qian(钱海杰), Kurash Ibrahim(奎热西), Xiaohang Chen(陈晓航), Huahan Zhan(詹华瀚), Yinghui Zhou(周颖慧), Junyong Kang(康俊勇)   

  1. 1 Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, China;
    2 Xiamen University Malaysia Campus, Sepang, Selangor 439000, Malaysia;
    3 State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China;
    4 Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
  • 收稿日期:2015-12-28 修回日期:2016-03-02 出版日期:2016-07-05 发布日期:2016-07-05
  • 通讯作者: Hui-Qiong Wang E-mail:hqwang@xmu.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11204253, U1332105, 61227009, and 91321102), the Fundamental Research Funds for Central Universities, China (Grant No. 20720160020), and the National High Technology Research and Development Program of China (Grant No. 2014AA052202).

Influence of nitrogen and magnesium doping on the properties of ZnO films

Dong-hua Li(李东华)1, Hui-Qiong Wang(王惠琼)1,2,3, Hua Zhou(周华)1, Ya-Ping Li(李亚平)1, Zheng Huang(黄政)1, Jin-Cheng Zheng(郑金成)1,2, Jia-Ou Wang(王嘉鸥)4, Hai-jie Qian(钱海杰)4, Kurash Ibrahim(奎热西)4, Xiaohang Chen(陈晓航)1, Huahan Zhan(詹华瀚)1, Yinghui Zhou(周颖慧)1, Junyong Kang(康俊勇)1   

  1. 1 Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, China;
    2 Xiamen University Malaysia Campus, Sepang, Selangor 439000, Malaysia;
    3 State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China;
    4 Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
  • Received:2015-12-28 Revised:2016-03-02 Online:2016-07-05 Published:2016-07-05
  • Contact: Hui-Qiong Wang E-mail:hqwang@xmu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11204253, U1332105, 61227009, and 91321102), the Fundamental Research Funds for Central Universities, China (Grant No. 20720160020), and the National High Technology Research and Development Program of China (Grant No. 2014AA052202).

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摘要： Undoped ZnO and doped ZnO films were deposited on the MgO(111) substrates using oxygen plasma-assisted molecular beam expitaxy. The orientations of the grown ZnO thin film were investigated by in situ reflection high-energy electron diffraction and ex situ x-ray diffraction (XRD). The film roughness was measured by atomic force microscopy, which was correlated with the grain sizes determined by XRD. Synchrotron-based x-ray absorption spectroscopy was performed to study the doping effect on the electronic properties of the ZnO films, compared with density functional theory calculations. It is found that, nitrogen doping would hinder the growth of thin film, and generate the NO defect, while magnesium doping promotes the quality of nitrogen-doped ZnO films, inhibiting (N2)O production and increasing nitrogen content.

关键词: ZnO, nitrogen, magnesium, x-ray absorption spectra

Abstract: Undoped ZnO and doped ZnO films were deposited on the MgO(111) substrates using oxygen plasma-assisted molecular beam expitaxy. The orientations of the grown ZnO thin film were investigated by in situ reflection high-energy electron diffraction and ex situ x-ray diffraction (XRD). The film roughness was measured by atomic force microscopy, which was correlated with the grain sizes determined by XRD. Synchrotron-based x-ray absorption spectroscopy was performed to study the doping effect on the electronic properties of the ZnO films, compared with density functional theory calculations. It is found that, nitrogen doping would hinder the growth of thin film, and generate the NO defect, while magnesium doping promotes the quality of nitrogen-doped ZnO films, inhibiting (N2)O production and increasing nitrogen content.

Key words: ZnO, nitrogen, magnesium, x-ray absorption spectra

中图分类号:  (III-V and II-VI semiconductors)

  • 61.72.uj
61.05.cj (X-ray absorption spectroscopy: EXAFS, NEXAFS, XANES, etc.) 61.05.js (X-ray photoelectron diffraction)