Strictly non-blocking 4× 4 silicon electro-optic switch matrix

doi:10.1088/1674-1056/24/12/124209

中国物理B ›› 2015, Vol. 24 ›› Issue (12): 124209-124209.doi: 10.1088/1674-1056/24/12/124209

• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇下一篇

Strictly non-blocking 4× 4 silicon electro-optic switch matrix

周培基, 邢界江, 李显尧, 李智勇, 余金中, 俞育德

Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

收稿日期:2015-06-03 修回日期:2015-07-14 出版日期:2015-12-05 发布日期:2015-12-05
通讯作者: Yu Yu-De E-mail:yudeyu@semi.ac.cn
基金资助:
Project supported by the National Basic Research Program of China (Grant No. 2011CB301701), the National High Technology Research and Development Program of China (Grant Nos. 2013AA014402, 2012AA012202, and 2015AA016904), and the National Natural Science Foundation of China (Grant Nos. 61275065 and 61107048).

Strictly non-blocking 4× 4 silicon electro-optic switch matrix

Zhou Pei-Ji (周培基), Xing Jie-Jiang (邢界江), Li Xian-Yao (李显尧), Li Zhi-Yong (李智勇), Yu Jin-Zhong (余金中), Yu Yu-De (俞育德)

Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Received:2015-06-03 Revised:2015-07-14 Online:2015-12-05 Published:2015-12-05
Contact: Yu Yu-De E-mail:yudeyu@semi.ac.cn
Supported by:
Project supported by the National Basic Research Program of China (Grant No. 2011CB301701), the National High Technology Research and Development Program of China (Grant Nos. 2013AA014402, 2012AA012202, and 2015AA016904), and the National Natural Science Foundation of China (Grant Nos. 61275065 and 61107048).

摘要/Abstract

摘要：

The first path-independent insertion-loss (PILOSS) strictly non-blocking 4× 4 silicon electro-optic switch matrix is reported. The footprint of this switch matrix is only 4.6 mm × 1.0 mm. Using single-arm modulation, the crosstalk measured in this test is-13 dB～-27 dB. And a maximum crosstalk deterioration of 6dB caused by two-path interference is also found.

关键词: Strictly non-blocking, silicon electro-optic switch matrix

Abstract:

Key words: Strictly non-blocking, silicon electro-optic switch matrix

中图分类号: (Interconnects, including holographic interconnects)

42.82.Ds

42.82.Cr (Fabrication techniques; lithography, pattern transfer) 42.82.Bq (Design and performance testing of integrated-optical systems)

周培基, 邢界江, 李显尧, 李智勇, 余金中, 俞育德. Strictly non-blocking 4× 4 silicon electro-optic switch matrix[J]. 中国物理B, 2015, 24(12): 124209-124209.

Zhou Pei-Ji (周培基), Xing Jie-Jiang (邢界江), Li Xian-Yao (李显尧), Li Zhi-Yong (李智勇), Yu Jin-Zhong (余金中), Yu Yu-De (俞育德). Strictly non-blocking 4× 4 silicon electro-optic switch matrix[J]. Chin. Phys. B, 2015, 24(12): 124209-124209.

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Strictly non-blocking 4× 4 silicon electro-optic switch matrix

Strictly non-blocking 4× 4 silicon electro-optic switch matrix

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