中国物理B ›› 2015, Vol. 24 ›› Issue (11): 110701-110701.doi: 10.1088/1674-1056/24/11/110701

• GENERAL • 上一篇    下一篇

Composite behaviors of dual meminductor circuits

郑辞晏a, 于东升a, 梁燕a, 陈孟科b   

  1. a School of Information and Electrical Engineering, China University of Mining and Technology, Xuzhou 221116, China;
    b School of Mechanical Engineering, Huaihai Institute of Technology, Lianyungang 222005, China
  • 收稿日期:2015-06-01 修回日期:2015-07-15 出版日期:2015-11-05 发布日期:2015-11-05
  • 通讯作者: Yu Dong-Sheng E-mail:dongsiee@163.com
  • 基金资助:

    Project supported by the Fundamental Research Funds for the Central Universities, China (Grant No. 2013QNB28.)

Composite behaviors of dual meminductor circuits

Zheng Ci-Yan (郑辞晏)a, Yu Dong-Sheng (于东升)a, Liang Yan (梁燕)a, Chen Meng-Ke (陈孟科)b   

  1. a School of Information and Electrical Engineering, China University of Mining and Technology, Xuzhou 221116, China;
    b School of Mechanical Engineering, Huaihai Institute of Technology, Lianyungang 222005, China
  • Received:2015-06-01 Revised:2015-07-15 Online:2015-11-05 Published:2015-11-05
  • Contact: Yu Dong-Sheng E-mail:dongsiee@163.com
  • Supported by:

    Project supported by the Fundamental Research Funds for the Central Universities, China (Grant No. 2013QNB28.)

摘要:

This paper focuses on analyzing the composite dynamic behaviors of two meminductors in serial and parallel connections with different polarities. Based on the constitutive relations, two time-integral-of-flux (TIF) controlled meminductors are adopted to theoretically demonstrate the variation of memductance in terms of TIF, charge, flux, and current. By utilizing a floating memristor-less meminductor emulator, the theoretical analysis reported in this paper is confirmed via a PSPICE simulation study and hardware experiment. Good agreement among theoretical analysis, simulation, and hardware validation confirms that dual meminductor circuits in composite connections behave as a new meminductor with higher complexity.

关键词: composite behavior, serial connection, parallel connection, meminductor

Abstract:

This paper focuses on analyzing the composite dynamic behaviors of two meminductors in serial and parallel connections with different polarities. Based on the constitutive relations, two time-integral-of-flux (TIF) controlled meminductors are adopted to theoretically demonstrate the variation of memductance in terms of TIF, charge, flux, and current. By utilizing a floating memristor-less meminductor emulator, the theoretical analysis reported in this paper is confirmed via a PSPICE simulation study and hardware experiment. Good agreement among theoretical analysis, simulation, and hardware validation confirms that dual meminductor circuits in composite connections behave as a new meminductor with higher complexity.

Key words: composite behavior, serial connection, parallel connection, meminductor

中图分类号:  (Circuits and circuit components)

  • 07.50.Ek
84.30.Ng (Oscillators, pulse generators, and function generators) 85.25.Hv (Superconducting logic elements and memory devices; microelectronic circuits)