中国物理B ›› 2015, Vol. 24 ›› Issue (11): 110701-110701.doi: 10.1088/1674-1056/24/11/110701
Composite behaviors of dual meminductor circuits
郑辞晏a, 于东升a, 梁燕a, 陈孟科b
- a School of Information and Electrical Engineering, China University of Mining and Technology, Xuzhou 221116, China;
b School of Mechanical Engineering, Huaihai Institute of Technology, Lianyungang 222005, China
Composite behaviors of dual meminductor circuits
Zheng Ci-Yan (郑辞晏)a, Yu Dong-Sheng (于东升)a, Liang Yan (梁燕)a, Chen Meng-Ke (陈孟科)b
- a School of Information and Electrical Engineering, China University of Mining and Technology, Xuzhou 221116, China;
b School of Mechanical Engineering, Huaihai Institute of Technology, Lianyungang 222005, China
摘要：
This paper focuses on analyzing the composite dynamic behaviors of two meminductors in serial and parallel connections with different polarities. Based on the constitutive relations, two time-integral-of-flux (TIF) controlled meminductors are adopted to theoretically demonstrate the variation of memductance in terms of TIF, charge, flux, and current. By utilizing a floating memristor-less meminductor emulator, the theoretical analysis reported in this paper is confirmed via a PSPICE simulation study and hardware experiment. Good agreement among theoretical analysis, simulation, and hardware validation confirms that dual meminductor circuits in composite connections behave as a new meminductor with higher complexity.
中图分类号: (Circuits and circuit components)
- 07.50.Ek