›› 2015, Vol. 24 ›› Issue (2): 27501-027501.doi: 10.1088/1674-1056/24/2/027501

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Quantum phase transition and Coulomb blockade effect in triangular quantum dots with interdot capacitive and tunnel couplings

熊永臣a, 王为忠b c, 杨俊涛a, 黄海铭a   

  1. a School of Science, Hubei University of Automotive Technology (HUAT), Shiyan 442002, China;
    b Department of Physics, Wuhan University, Wuhan 430072, China;
    c Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan 430072, China
  • 收稿日期:2014-08-16 修回日期:2014-09-26 出版日期:2015-02-05 发布日期:2015-02-05
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 10874132 and 11174228) and the Doctoral Scientific Research Foundation of HUAT (Grant No. BK201407). One of the authors (Huang Hai-Ming) supported by the Scientific Research Items Foundation of Educational Committee of Hubei Province, China (Grant No. Q20131805).

Quantum phase transition and Coulomb blockade effect in triangular quantum dots with interdot capacitive and tunnel couplings

Xiong Yong-Chen (熊永臣)a, Wang Wei-Zhong (王为忠)b c, Yang Jun-Tao (杨俊涛)a, Huang Hai-Ming (黄海铭)a   

  1. a School of Science, Hubei University of Automotive Technology (HUAT), Shiyan 442002, China;
    b Department of Physics, Wuhan University, Wuhan 430072, China;
    c Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan 430072, China
  • Received:2014-08-16 Revised:2014-09-26 Online:2015-02-05 Published:2015-02-05
  • Contact: Xiong Yong-Chen E-mail:xiongyc_lx@huat.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 10874132 and 11174228) and the Doctoral Scientific Research Foundation of HUAT (Grant No. BK201407). One of the authors (Huang Hai-Ming) supported by the Scientific Research Items Foundation of Educational Committee of Hubei Province, China (Grant No. Q20131805).

摘要: The quantum phase transition and the electronic transport in a triangular quantum dot system are investigated using the numerical renormalization group method. We concentrate on the interplay between the interdot capacitive coupling V and the interdot tunnel coupling t. For small t, three dots form a local spin doublet. As t increases, due to the competition between V and t, there exist two first-order transitions with phase sequence spin-doublet-magnetic frustration phase-orbital spin singlet. When t is absent, the evolutions of the total charge on the dots and the linear conductance are of the typical Coulomb-blockade features with increasing gate voltage. While for sufficient t, the antiferromagnetic spin correlation between dots is enhanced, and the conductance is strongly suppressed for the bonding state is almost doubly occupied.

关键词: quantum phase transition, Coulomb blockade effect, triangular quantum dots, strongly correlated system

Abstract: The quantum phase transition and the electronic transport in a triangular quantum dot system are investigated using the numerical renormalization group method. We concentrate on the interplay between the interdot capacitive coupling V and the interdot tunnel coupling t. For small t, three dots form a local spin doublet. As t increases, due to the competition between V and t, there exist two first-order transitions with phase sequence spin-doublet-magnetic frustration phase-orbital spin singlet. When t is absent, the evolutions of the total charge on the dots and the linear conductance are of the typical Coulomb-blockade features with increasing gate voltage. While for sufficient t, the antiferromagnetic spin correlation between dots is enhanced, and the conductance is strongly suppressed for the bonding state is almost doubly occupied.

Key words: quantum phase transition, Coulomb blockade effect, triangular quantum dots, strongly correlated system

中图分类号:  (Local moment in compounds and alloys; Kondo effect, valence fluctuations, heavy fermions)

  • 75.20.Hr
73.63.-b (Electronic transport in nanoscale materials and structures) 73.23.-b (Electronic transport in mesoscopic systems)