Coupling strength effect on shot noise in boron devices

doi:10.1088/1674-1056/22/11/117304

中国物理B ›› 2013, Vol. 22 ›› Issue (11): 117304-117304.doi: 10.1088/1674-1056/22/11/117304

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Coupling strength effect on shot noise in boron devices

李桂琴, 郭永

Department of Physics, Tsinghua University, Beijing 100084, China

收稿日期:2013-03-18 修回日期:2013-04-22 出版日期:2013-09-28 发布日期:2013-09-28
基金资助:
Project supported by the National Basic Research Program of China (Grants Nos. 2011CB921602 and 2011CB606405) and the National Natural Science Foundation of China (Grant Nos. 91221205 and 11174168).

Coupling strength effect on shot noise in boron devices

Li Gui-Qin (李桂琴), Guo Yong (郭永)

Department of Physics, Tsinghua University, Beijing 100084, China

Received:2013-03-18 Revised:2013-04-22 Online:2013-09-28 Published:2013-09-28
Contact: Li Gui-Qin E-mail:ligqin@mail.tsinghua.edu.cn
Supported by:
Project supported by the National Basic Research Program of China (Grants Nos. 2011CB921602 and 2011CB606405) and the National Natural Science Foundation of China (Grant Nos. 91221205 and 11174168).

摘要/Abstract

摘要： The shot noise properties in boron devices are investigated with a tight-binding model and the non-equilibrium Green’s function. It is found that the shot noise and Fano factors can be tuned by changing the structures, the size, and the coupling strength. The shot noise is suppressed momentarily as we switch on the bias voltage, and the electron correlation is significant. The Fano factors are more sensitive to the ribbon width than to the ribbon length in the full coupling context. In the weak-coupling context, the Fano factors are almost invariant with the increase of length and width over a wide bias range.

关键词: shot noise, boron devices, coupling strength

Abstract: The shot noise properties in boron devices are investigated with a tight-binding model and the non-equilibrium Green’s function. It is found that the shot noise and Fano factors can be tuned by changing the structures, the size, and the coupling strength. The shot noise is suppressed momentarily as we switch on the bias voltage, and the electron correlation is significant. The Fano factors are more sensitive to the ribbon width than to the ribbon length in the full coupling context. In the weak-coupling context, the Fano factors are almost invariant with the increase of length and width over a wide bias range.

Key words: shot noise, boron devices, coupling strength

中图分类号: (Electronic transport in mesoscopic systems)

73.23.-b

85.35.-p (Nanoelectronic devices)

李桂琴, 郭永. Coupling strength effect on shot noise in boron devices[J]. 中国物理B, 2013, 22(11): 117304-117304.

Li Gui-Qin (李桂琴), Guo Yong (郭永). Coupling strength effect on shot noise in boron devices[J]. Chin. Phys. B, 2013, 22(11): 117304-117304.

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Coupling strength effect on shot noise in boron devices

Coupling strength effect on shot noise in boron devices

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