High-speed and broad optical bandwidth silicon modulator

doi:10.1088/1674-1056/22/11/114212

中国物理B ›› 2013, Vol. 22 ›› Issue (11): 114212-114212.doi: 10.1088/1674-1056/22/11/114212

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High-speed and broad optical bandwidth silicon modulator

徐浩, 李显尧, 肖希, 李智勇, 俞育德, 余金中

State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

收稿日期:2013-06-04 修回日期:2013-07-15 出版日期:2013-09-28 发布日期:2013-09-28
基金资助:
Project supported by the National High Technology Research and Development Program of China (Grant No. 2012AA012202), the National Basic Research Program of China (Grant No. 2011CB301701), the Knowledge Innovation Program of the Chinese Academy of Sciences (Grant No. KGCX2-EW-102), and the National Natural Science Foundation of China (Grant Nos. 61107048 and 61275065).

High-speed and broad optical bandwidth silicon modulator

Xu Hao (徐浩), Li Xian-Yao (李显尧), Xiao Xi (肖希), Li Zhi-Yong (李智勇), Yu Yu-De (俞育德), Yu Jin-Zhong (余金中)

State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Received:2013-06-04 Revised:2013-07-15 Online:2013-09-28 Published:2013-09-28
Contact: Yu Yu-De E-mail:yudeyu@semi.ac.cn
Supported by:
Project supported by the National High Technology Research and Development Program of China (Grant No. 2012AA012202), the National Basic Research Program of China (Grant No. 2011CB301701), the Knowledge Innovation Program of the Chinese Academy of Sciences (Grant No. KGCX2-EW-102), and the National Natural Science Foundation of China (Grant Nos. 61107048 and 61275065).

摘要/Abstract

摘要： A high-speed silicon modulator with broad optical bandwidth is proposed based on a symmetrically configured Mach–Zehnder interferometer. Careful phase bias control and traveling-wave design are used to improve the high-speed performance. Over a broadband wavelength range, high-speed operation up to 30 Gbit/s with a 4.5 dB–5.5 dB extinction ratio is experimentally demonstrated with a low driving voltage of 3 V.

关键词: optical modulators, integrated optics, optoelectronic device characterization

Abstract: A high-speed silicon modulator with broad optical bandwidth is proposed based on a symmetrically configured Mach–Zehnder interferometer. Careful phase bias control and traveling-wave design are used to improve the high-speed performance. Over a broadband wavelength range, high-speed operation up to 30 Gbit/s with a 4.5 dB–5.5 dB extinction ratio is experimentally demonstrated with a low driving voltage of 3 V.

Key words: optical modulators, integrated optics, optoelectronic device characterization

中图分类号: (Integrated optics)

42.82.-m

42.79.Hp (Optical processors, correlators, and modulators) 85.60.Bt (Optoelectronic device characterization, design, and modeling)

徐浩, 李显尧, 肖希, 李智勇, 俞育德, 余金中. High-speed and broad optical bandwidth silicon modulator[J]. 中国物理B, 2013, 22(11): 114212-114212.

Xu Hao (徐浩), Li Xian-Yao (李显尧), Xiao Xi (肖希), Li Zhi-Yong (李智勇), Yu Yu-De (俞育德), Yu Jin-Zhong (余金中). High-speed and broad optical bandwidth silicon modulator[J]. Chin. Phys. B, 2013, 22(11): 114212-114212.

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High-speed and broad optical bandwidth silicon modulator

High-speed and broad optical bandwidth silicon modulator

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