Performance enhancement of an InGaN light-emitting diode with an AlGaN/InGaN superlattice electron-blocking layer

doi:10.1088/1674-1056/22/10/108505

中国物理B ›› 2013, Vol. 22 ›› Issue (10): 108505-108505.doi: 10.1088/1674-1056/22/10/108505

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Performance enhancement of an InGaN light-emitting diode with an AlGaN/InGaN superlattice electron-blocking layer

熊建勇^a, 许毅钦^b, 赵芳^a, 宋晶晶^a, 丁彬彬^a, 郑树文^a, 张涛^a, 范广涵^a

a Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China;
b Guangdong General Research Institute for Industrial Technology, Guangzhou 510650, China

收稿日期:2012-12-28 修回日期:2013-04-09 出版日期:2013-08-30 发布日期:2013-08-30
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61176043) and the Special Funds for Provincial Strategic and Emerging Industries Projects of Guangdong, China (Grant Nos. 2010A081002005, 2011A081301003, and 2012A080304016).

Performance enhancement of an InGaN light-emitting diode with an AlGaN/InGaN superlattice electron-blocking layer

Xiong Jian-Yong (熊建勇)^a, Xu Yi-Qin (许毅钦)^b, Zhao Fang (赵芳)^a, Song Jing-Jing (宋晶晶)^a, Ding Bin-Bin (丁彬彬)^a, Zheng Shu-Wen (郑树文)^a, Zhang Tao (张涛)^a, Fan Guang-Han (范广涵)^a

a Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China;
b Guangdong General Research Institute for Industrial Technology, Guangzhou 510650, China

Received:2012-12-28 Revised:2013-04-09 Online:2013-08-30 Published:2013-08-30
Contact: Fan Guang-Han E-mail:gfan@scnu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61176043) and the Special Funds for Provincial Strategic and Emerging Industries Projects of Guangdong, China (Grant Nos. 2010A081002005, 2011A081301003, and 2012A080304016).

摘要/Abstract

摘要： The efficiency enhancement of an InGaN light-emitting diode (LED) with an AlGaN/InGaN superlattice (SL) electron-blocking layer (EBL) is studied numerically, which involves the light-current performance curve, internal quantum efficiency electrostatic field band wavefunction, energy band diagram carrier concentration, electron current density, and radiative recombination rate. The simulation results indicate that the LED with an AlGaN/InGaN SL EBL has better optical performance than the LED with a conventional rectangular AlGaN EBL or a normal AlGaN/GaN SL EBL because of the appropriately modified energy band diagram, which is favorable for the injection of holes and confinement of electrons. Additionally, the efficiency droop of the LED with an AlGaN/InGaN SL EBL is markedly improved by reducing the polarization field in the active region.

关键词: light-emitting diodes, AlGaN/InGaN superlattice efficiency droop, numerical simulation

Abstract: The efficiency enhancement of an InGaN light-emitting diode (LED) with an AlGaN/InGaN superlattice (SL) electron-blocking layer (EBL) is studied numerically, which involves the light-current performance curve, internal quantum efficiency electrostatic field band wavefunction, energy band diagram carrier concentration, electron current density, and radiative recombination rate. The simulation results indicate that the LED with an AlGaN/InGaN SL EBL has better optical performance than the LED with a conventional rectangular AlGaN EBL or a normal AlGaN/GaN SL EBL because of the appropriately modified energy band diagram, which is favorable for the injection of holes and confinement of electrons. Additionally, the efficiency droop of the LED with an AlGaN/InGaN SL EBL is markedly improved by reducing the polarization field in the active region.

Key words: light-emitting diodes, AlGaN/InGaN superlattice efficiency droop, numerical simulation

中图分类号: (Light-emitting devices)

85.60.Jb

73.61.Ey (III-V semiconductors) 78.60.Fi (Electroluminescence)

熊建勇, 许毅钦, 赵芳, 宋晶晶, 丁彬彬, 郑树文, 张涛, 范广涵. Performance enhancement of an InGaN light-emitting diode with an AlGaN/InGaN superlattice electron-blocking layer[J]. 中国物理B, 2013, 22(10): 108505-108505.

Xiong Jian-Yong (熊建勇), Xu Yi-Qin (许毅钦), Zhao Fang (赵芳), Song Jing-Jing (宋晶晶), Ding Bin-Bin (丁彬彬), Zheng Shu-Wen (郑树文), Zhang Tao (张涛), Fan Guang-Han (范广涵). Performance enhancement of an InGaN light-emitting diode with an AlGaN/InGaN superlattice electron-blocking layer[J]. Chin. Phys. B, 2013, 22(10): 108505-108505.

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Performance enhancement of an InGaN light-emitting diode with an AlGaN/InGaN superlattice electron-blocking layer

Performance enhancement of an InGaN light-emitting diode with an AlGaN/InGaN superlattice electron-blocking layer

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