中国物理B ›› 2013, Vol. 22 ›› Issue (9): 94208-094208.doi: 10.1088/1674-1056/22/9/094208

• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇    下一篇

High power 2-μm room-temperature continuous-wave operation of GaSb-based strained quantum-well lasers

徐云, 王永宾, 张宇, 宋国峰, 陈良惠   

  1. Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 收稿日期:2013-01-15 修回日期:2013-03-08 出版日期:2013-07-26 发布日期:2013-07-26
  • 基金资助:
    Project supported by the Beijing Natural Science Foundation, China (Grant No. 4112058).

High power 2-μm room-temperature continuous-wave operation of GaSb-based strained quantum-well lasers

Xu Yun (徐云), Wang Yong-Bin (王永宾), Zhang Yu (张宇), Song Guo-Feng (宋国峰), Chen Liang-Hui (陈良惠)   

  1. Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • Received:2013-01-15 Revised:2013-03-08 Online:2013-07-26 Published:2013-07-26
  • Contact: Song Guo-Feng E-mail:sgf@semi.ac.cn
  • Supported by:
    Project supported by the Beijing Natural Science Foundation, China (Grant No. 4112058).

PDF (PC)

575

赞

摘要： A high power GaSb-based laser diode with lasing wavelength at 2 μm was fabricated and optimized. With the optimized epitaxial laser structure, the internal loss and the threshold current density decreased and the internal quantum efficiency increased. For uncoated broad-area lasers, the threshold current density was as low as 144 A/cm2 (72 A/cm2 per quantum well), and the slope efficiency was 0.2 W/A. The internal loss was 11 cm-1 and the internal quantum efficiency was 27.1%. The maximum output power of 357 mW under continuous-wave operation at room temperature was achieved. The electrical and optical properties of the laser diode were improved.

关键词: GaIn(As)Sb/AlGaAsSb diode lasers, threshold current density, output power

Abstract: A high power GaSb-based laser diode with lasing wavelength at 2 μm was fabricated and optimized. With the optimized epitaxial laser structure, the internal loss and the threshold current density decreased and the internal quantum efficiency increased. For uncoated broad-area lasers, the threshold current density was as low as 144 A/cm2 (72 A/cm2 per quantum well), and the slope efficiency was 0.2 W/A. The internal loss was 11 cm-1 and the internal quantum efficiency was 27.1%. The maximum output power of 357 mW under continuous-wave operation at room temperature was achieved. The electrical and optical properties of the laser diode were improved.

Key words: GaIn(As)Sb/AlGaAsSb diode lasers, threshold current density, output power

中图分类号:  (Semiconductor lasers; laser diodes)

  • 42.55.Px
42.60.Jf (Beam characteristics: profile, intensity, and power; spatial pattern formation)