中国物理B ›› 2013, Vol. 22 ›› Issue (9): 94208-094208.doi: 10.1088/1674-1056/22/9/094208
• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇 下一篇
徐云, 王永宾, 张宇, 宋国峰, 陈良惠
Xu Yun (徐云), Wang Yong-Bin (王永宾), Zhang Yu (张宇), Song Guo-Feng (宋国峰), Chen Liang-Hui (陈良惠)
摘要: A high power GaSb-based laser diode with lasing wavelength at 2 μm was fabricated and optimized. With the optimized epitaxial laser structure, the internal loss and the threshold current density decreased and the internal quantum efficiency increased. For uncoated broad-area lasers, the threshold current density was as low as 144 A/cm2 (72 A/cm2 per quantum well), and the slope efficiency was 0.2 W/A. The internal loss was 11 cm-1 and the internal quantum efficiency was 27.1%. The maximum output power of 357 mW under continuous-wave operation at room temperature was achieved. The electrical and optical properties of the laser diode were improved.
中图分类号: (Semiconductor lasers; laser diodes)