中国物理B ›› 2013, Vol. 22 ›› Issue (8): 88502-088502.doi: 10.1088/1674-1056/22/8/088502

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

The conductive mechanisms of a titanium oxide memristor with dopant drift and a tunnel barrier

田晓波, 徐晖, 李清江   

  1. Embedded System and Solid-State Engineering Technology Center, School of Electronic Science and Engineering,National University of Defense and Technology, Changsha 410073, China
  • 收稿日期:2013-01-30 修回日期:2013-03-06 出版日期:2013-06-27 发布日期:2013-06-27
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 61171017).

The conductive mechanisms of a titanium oxide memristor with dopant drift and a tunnel barrier

Tian Xiao-Bo (田晓波), Xu Hui (徐晖), Li Qing-Jiang (李清江)   

  1. Embedded System and Solid-State Engineering Technology Center, School of Electronic Science and Engineering,National University of Defense and Technology, Changsha 410073, China
  • Received:2013-01-30 Revised:2013-03-06 Online:2013-06-27 Published:2013-06-27
  • Contact: Tian Xiao-Bo E-mail:txiaobo1985@gmail.com
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 61171017).

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摘要： Nano-scale titanium oxide memristors exhibit complex conductive characteristics, which have already been proved by existing research. One possible reason for this is that more than one mechanism exists, and together they codetermine the conductive behaviors of the memristor. In this paper, we first analyze the theoretical base and conductive process of a memristor, and then propose a compatible circuit model to discuss and simulate the coexistence of the dopant drift and tunnel barrier-based mechanisms. Simulation results are given and compared with the published experimental data to prove the possibility of the coexistence. This work provides a practical model and some suggestions for studying the conductive mechanisms of memristors.

关键词: memristor, conductive mechanism, dopant drift, tunnel barrier

Abstract: Nano-scale titanium oxide memristors exhibit complex conductive characteristics, which have already been proved by existing research. One possible reason for this is that more than one mechanism exists, and together they codetermine the conductive behaviors of the memristor. In this paper, we first analyze the theoretical base and conductive process of a memristor, and then propose a compatible circuit model to discuss and simulate the coexistence of the dopant drift and tunnel barrier-based mechanisms. Simulation results are given and compared with the published experimental data to prove the possibility of the coexistence. This work provides a practical model and some suggestions for studying the conductive mechanisms of memristors.

Key words: memristor, conductive mechanism, dopant drift, tunnel barrier

中图分类号:  (Nanoelectronic devices)

  • 85.35.-p
87.85.Qr (Nanotechnologies-design) 61.46.-w (Structure of nanoscale materials) 85.40.Bh (Computer-aided design of microcircuits; layout and modeling)