中国物理B ›› 2013, Vol. 22 ›› Issue (6): 67203-067203.doi: 10.1088/1674-1056/22/6/067203

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Electron mobility in the linear region of AlGaN/AlN/GaN heterostructure field-effect transistor

于英霞a, 林兆军a, 栾崇彪a, 王玉堂a, 陈弘b, 王占国c   

  1. a School of Physics, Shandong University, Jinan 250100, China;
    b Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
    c Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 收稿日期:2012-09-27 修回日期:2012-11-26 出版日期:2013-05-01 发布日期:2013-05-01
  • 基金资助:
    Projected supported by the National Natural Science Foundation of China (Grant No. 11174182) and the Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20110131110005).

Electron mobility in the linear region of AlGaN/AlN/GaN heterostructure field-effect transistor

Yu Ying-Xia (于英霞)a, Lin Zhao-Jun (林兆军)a, Luan Chong-Biao (栾崇彪)a, Wang Yu-Tang (王玉堂)a, Chen Hong (陈弘)b, Wang Zhan-Guo (王占国)c   

  1. a School of Physics, Shandong University, Jinan 250100, China;
    b Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
    c Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • Received:2012-09-27 Revised:2012-11-26 Online:2013-05-01 Published:2013-05-01
  • Contact: Lin Zhao-Jun E-mail:linzj@sdu.edu.cn
  • Supported by:
    Projected supported by the National Natural Science Foundation of China (Grant No. 11174182) and the Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20110131110005).

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摘要： We simulate the current-voltage (I-V) characteristics of the AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) with different gate lengths using the quasi-two-dimensional (quasi-2D) model. The calculation results obtained using modified mobility model are found to accord well with the experimental data. By analyzing the variation of the electron mobility for the two-dimensional electron gas (2DEG) with the electric field in the linear region of the AlGaN/AlN/GaN HFET I-V output characteristics, it is found that the polarization Coulomb field scattering still plays an important role in the electron mobility of AlGaN/AlN/GaN HFET at the higher drain voltage and channel electric field. As drain voltage and channel electric field increase, the 2DEG density reduces and the polarization Coulomb field scattering increases, as a result, the 2DEG electron mobility decreases.

关键词: AlGaN/AlN/GaN heterostructure field-effect transistors, quasi-two-dimensional model, the polarization Coulomb field scattering, the two-dimensional electron gas mobility

Abstract: We simulate the current-voltage (I-V) characteristics of the AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) with different gate lengths using the quasi-two-dimensional (quasi-2D) model. The calculation results obtained using modified mobility model are found to accord well with the experimental data. By analyzing the variation of the electron mobility for the two-dimensional electron gas (2DEG) with the electric field in the linear region of the AlGaN/AlN/GaN HFET I-V output characteristics, it is found that the polarization Coulomb field scattering still plays an important role in the electron mobility of AlGaN/AlN/GaN HFET at the higher drain voltage and channel electric field. As drain voltage and channel electric field increase, the 2DEG density reduces and the polarization Coulomb field scattering increases, as a result, the 2DEG electron mobility decreases.

Key words: AlGaN/AlN/GaN heterostructure field-effect transistors, quasi-two-dimensional model, the polarization Coulomb field scattering, the two-dimensional electron gas mobility

中图分类号:  (III-V and II-VI semiconductors)

  • 72.80.Ey
72.10.-d (Theory of electronic transport; scattering mechanisms) 72.20.Fr (Low-field transport and mobility; piezoresistance)