Electron mobility in the linear region of AlGaN/AlN/GaN heterostructure field-effect transistor
于英霞, 林兆军, 栾崇彪, 王玉堂, 陈弘, 王占国
Electron mobility in the linear region of AlGaN/AlN/GaN heterostructure field-effect transistor
Yu Ying-Xia (于英霞), Lin Zhao-Jun (林兆军), Luan Chong-Biao (栾崇彪), Wang Yu-Tang (王玉堂), Chen Hong (陈弘), Wang Zhan-Guo (王占国)
中国物理B
.
2013, (6): 67203
-067203
.
DOI: 10.1088/1674-1056/22/6/067203