Dual role of multiple-transistor charge sharing collection in single-event transient

doi:10.1088/1674-1056/22/4/046103

中国物理B ›› 2013, Vol. 22 ›› Issue (4): 46103-046103.doi: 10.1088/1674-1056/22/4/046103

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Dual role of multiple-transistor charge sharing collection in single-event transient

郭阳, 陈建军, 何益百, 梁斌, 刘必慰

School of Computer Science, National University of Defense Technology, Changsha 410073, China

收稿日期:2012-05-22 修回日期:2012-11-26 出版日期:2013-03-01 发布日期:2013-03-01
基金资助:
Project supported by the Key Program of the National Natural Science Foundation of China (Grant No. 61133007) and the National Natural Science Foundation of China (Grant Nos. 61006070 and 61076025).

Dual role of multiple-transistor charge sharing collection in single-event transient

Guo Yang (郭阳), Chen Jian-Jun (陈建军), He Yi-Bai (何益百), Liang Bin (梁斌), Liu Bi-Wei (刘必慰)

School of Computer Science, National University of Defense Technology, Changsha 410073, China

Received:2012-05-22 Revised:2012-11-26 Online:2013-03-01 Published:2013-03-01
Contact: Chen Jian-Jun E-mail:cjj192000@163.com
Supported by:
Project supported by the Key Program of the National Natural Science Foundation of China (Grant No. 61133007) and the National Natural Science Foundation of China (Grant Nos. 61006070 and 61076025).

摘要/Abstract

摘要： As technologies scale down in size, that multiple-transistors are affected by a single ion becomes a universal phenomenon, and some new effects are present in single event transients (SETs) due to the charge sharing collection of the adjacent multiple-transistors. In this paper, not only the off-state p-channel metal-oxide semiconductor field-effect transistor (PMOS FET), but also the on-state PMOS is struck by a heavy-ion in two-transistor inverter chain, due to the charge sharing collection and the electrical interaction, the SET induced by striking the off-state PMOS is efficiently mitigated by the pulse quenching effect, but the SET induced by striking the on-state PMOS becomes dominant. It is indicated in this study that in the advanced technologies, the SET will no longer just be induced by ion's striking the off-state transistor, and the SET sensitive region will no longer just surround the off-state transistor either, as it is in the older technologies. We also discuss this issue in three-transistor inverter in depth, and the study illustrates that three-transistor inverter is still the better replacer for spaceborne integrated circuits design in the advanced technologies.

关键词: multiple-transistor charge sharing collection, single event transient (SET), pulse quenching effect, radiation hardened by design (RHBD)

Abstract: As technologies scale down in size, that multiple-transistors are affected by a single ion becomes a universal phenomenon, and some new effects are present in single event transients (SETs) due to the charge sharing collection of the adjacent multiple-transistors. In this paper, not only the off-state p-channel metal-oxide semiconductor field-effect transistor (PMOS FET), but also the on-state PMOS is struck by a heavy-ion in two-transistor inverter chain, due to the charge sharing collection and the electrical interaction, the SET induced by striking the off-state PMOS is efficiently mitigated by the pulse quenching effect, but the SET induced by striking the on-state PMOS becomes dominant. It is indicated in this study that in the advanced technologies, the SET will no longer just be induced by ion's striking the off-state transistor, and the SET sensitive region will no longer just surround the off-state transistor either, as it is in the older technologies. We also discuss this issue in three-transistor inverter in depth, and the study illustrates that three-transistor inverter is still the better replacer for spaceborne integrated circuits design in the advanced technologies.

Key words: multiple-transistor charge sharing collection, single event transient (SET), pulse quenching effect, radiation hardened by design (RHBD)

中图分类号: (Ion radiation effects)

61.80.Jh

85.30.Tv (Field effect devices) 85.30.Pq (Bipolar transistors)

郭阳, 陈建军, 何益百, 梁斌, 刘必慰. Dual role of multiple-transistor charge sharing collection in single-event transient[J]. 中国物理B, 2013, 22(4): 46103-046103.

Guo Yang (郭阳), Chen Jian-Jun (陈建军), He Yi-Bai (何益百), Liang Bin (梁斌), Liu Bi-Wei (刘必慰). Dual role of multiple-transistor charge sharing collection in single-event transient[J]. Chin. Phys. B, 2013, 22(4): 46103-046103.

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Dual role of multiple-transistor charge sharing collection in single-event transient

Dual role of multiple-transistor charge sharing collection in single-event transient

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