Chin. Phys. B ›› 2013, Vol. 22 ›› Issue (4): 47803-047803.doi: 10.1088/1674-1056/22/4/047803

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Engineering of electronic and optical properties of ZnO thin films via Cu doping

张国恒a b, 邓小燕a, 薛华a, 向钢b   

  1. a Key Laboratory for Electronic Materials of the State National Affairs Commission of PRC, School of Electrical Engineering,Northwest University for Nationality, Lanzhou 730030, China;
    b Department of Physics and Key Laboratory for Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064, China
  • 收稿日期:2012-12-06 修回日期:2012-12-30 出版日期:2013-03-01 发布日期:2013-03-01
  • 基金资助:
    Project supported by the Natural Science Foundation of Gansu Province, China (Grant No. 0803RJZA008), the Fundamental Research Funds for the Central Universities, China (Grant No. zyz2012057), the National Natural Science Foundation of China (Grant No. 11004141), and the Program for New Century Excellent Talents in University, China (Grant No. 11-0351).

Engineering of electronic and optical properties of ZnO thin films via Cu doping

Zhang Guo-Heng (张国恒)a b, Deng Xiao-Yan (邓小燕)a, Xue Hua (薛华)a, Xiang Gang (向钢)b   

  1. a Key Laboratory for Electronic Materials of the State National Affairs Commission of PRC, School of Electrical Engineering,Northwest University for Nationality, Lanzhou 730030, China;
    b Department of Physics and Key Laboratory for Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064, China
  • Received:2012-12-06 Revised:2012-12-30 Online:2013-03-01 Published:2013-03-01
  • Contact: Xiang Gang E-mail:gxiang@scu.edu.cn
  • Supported by:
    Project supported by the Natural Science Foundation of Gansu Province, China (Grant No. 0803RJZA008), the Fundamental Research Funds for the Central Universities, China (Grant No. zyz2012057), the National Natural Science Foundation of China (Grant No. 11004141), and the Program for New Century Excellent Talents in University, China (Grant No. 11-0351).

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摘要： ZnO thin films doped with different Cu concentrations are fabricated by reactive magnetron sputtering technique. XRD analysis indicates that the crystal quality of the ZnO:Cu film can be enhanced by moderate level of Cu-doping in the sputtering process. The results of XPS spectra of zinc, oxygen, and copper elements show that Cu-doping has an evident and complicated effect on the chemical state of oxygen, but little effect on those of zinc and copper. Interestingly, further investigation of the optical properties of ZnO:Cu samples shows that the transmittance spectra exhibit both red shift and blue shift with the increase of Cu doping, in contrast to the simple monotonic behavior of Burstein-Moss effect. Analysis reveals that this is due to the competition between oxygen vacancies and intrinsic and surface states of oxygen in the sample. Our result may suggest an effective way of tuning the bandgap of ZnO samples.

关键词: ZnO thin films, Cu doping, optical properties, bandgap tuning

Abstract: ZnO thin films doped with different Cu concentrations are fabricated by reactive magnetron sputtering technique. XRD analysis indicates that the crystal quality of the ZnO:Cu film can be enhanced by moderate level of Cu-doping in the sputtering process. The results of XPS spectra of zinc, oxygen, and copper elements show that Cu-doping has an evident and complicated effect on the chemical state of oxygen, but little effect on those of zinc and copper. Interestingly, further investigation of the optical properties of ZnO:Cu samples shows that the transmittance spectra exhibit both red shift and blue shift with the increase of Cu doping, in contrast to the simple monotonic behavior of Burstein-Moss effect. Analysis reveals that this is due to the competition between oxygen vacancies and intrinsic and surface states of oxygen in the sample. Our result may suggest an effective way of tuning the bandgap of ZnO samples.

Key words: ZnO thin films, Cu doping, optical properties, bandgap tuning

中图分类号:  (Semiconductors)

  • 78.40.Fy
78.55.Et (II-VI semiconductors) 78.66.Hf (II-VI semiconductors)