Reactively sputtered Fe3O4-based films for spintronics

doi:10.1088/1674-1056/22/4/047505

摘要/Abstract

摘要： Half metallic polycrystalline, epitaxial Fe₃O₄ films and Fe₃O₄-based heterostructures for spintronics were fabricated by DC reactive magnetron sputtering. Large tunneling magnetoresistance was found in the polycrystalline Fe₃O₄ films and attributed to the insulating grain boundaries. The pinning effect of the moments at the grain boundaries leads to a significant exchange bias. Frozen interfacial/surface moments induce weak saturation of the high-field magnetoresistance. The films show a moment rotation related butterfly-shaped magnetoresistance. It was found that in the films, natural growth defects, antiphase boundaries, and magnetocrystalline anisotropy play important roles in high-order anisotropic magnetoresistance. Spin injection from Fe₃O₄ films to semiconductive Si and ZnO was measured to be 45% and 28.5%, respectively. The positive magnetoresistance in the Fe₃O₄-based heterostructures is considered to be caused by a shift of the Fe₃O₄ eg ↑ band near the interface. Enhanced magnetization was observed in Fe₃O₄/BiFeO₃ heterostructures experimentally and further proved by first principle calculations. The enhanced magnetization can be explained by spin moments of the thin BiFeO₃ layer substantially reversing into a ferromagnetic arrangement under a strong coupling that is principally induced by electronic orbital reconstruction at the interface.

关键词: reactively sputtered Fe₃O₄ films, spintronics, magnetoresistance, interface

Abstract: Half metallic polycrystalline, epitaxial Fe₃O₄ films and Fe₃O₄-based heterostructures for spintronics were fabricated by DC reactive magnetron sputtering. Large tunneling magnetoresistance was found in the polycrystalline Fe₃O₄ films and attributed to the insulating grain boundaries. The pinning effect of the moments at the grain boundaries leads to a significant exchange bias. Frozen interfacial/surface moments induce weak saturation of the high-field magnetoresistance. The films show a moment rotation related butterfly-shaped magnetoresistance. It was found that in the films, natural growth defects, antiphase boundaries, and magnetocrystalline anisotropy play important roles in high-order anisotropic magnetoresistance. Spin injection from Fe₃O₄ films to semiconductive Si and ZnO was measured to be 45% and 28.5%, respectively. The positive magnetoresistance in the Fe₃O₄-based heterostructures is considered to be caused by a shift of the Fe₃O₄ eg ↑ band near the interface. Enhanced magnetization was observed in Fe₃O₄/BiFeO₃ heterostructures experimentally and further proved by first principle calculations. The enhanced magnetization can be explained by spin moments of the thin BiFeO₃ layer substantially reversing into a ferromagnetic arrangement under a strong coupling that is principally induced by electronic orbital reconstruction at the interface.

Key words: reactively sputtered Fe₃O₄ films, spintronics, magnetoresistance, interface

中图分类号: (Magnetotransport phenomena; materials for magnetotransport)

75.47.-m

72.25.Mk (Spin transport through interfaces) 81.15.Cd (Deposition by sputtering) 85.75.-d (Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)

李鹏, 金朝, 米文博, 白海力. Reactively sputtered Fe₃O₄-based films for spintronics[J]. 中国物理B, 2013, 22(4): 47505-047505.

Li Peng (李鹏), Jin Chao (金朝), Mi Wen-Bo (米文博), Bai Hai-Li (白海力). Reactively sputtered Fe₃O₄-based films for spintronics[J]. Chin. Phys. B, 2013, 22(4): 47505-047505.

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Reactively sputtered Fe₃O₄-based films for spintronics

Reactively sputtered Fe₃O₄-based films for spintronics

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