Electron inelastic mean free paths in solids: A theoretical approach

doi:10.1088/1674-1056/21/9/093402

中国物理B ›› 2012, Vol. 21 ›› Issue (9): 93402-093402.doi: 10.1088/1674-1056/21/9/093402

• ATOMIC AND MOLECULAR PHYSICS • 上一篇下一篇

Electron inelastic mean free paths in solids: A theoretical approach

Siddharth H. Pandya^a, B. G. Vaishnav^b, K. N. Joshipura^a

a Department of Physics, Sardar Patel University, Vallabh Vidyanagar-388120 (Gujarat) India;
b Physical Research Laboratory, Navarangpura, Ahmedabad-380009 (Gujarat) India

收稿日期:2012-09-15 出版日期:2012-08-01 发布日期:2012-08-01
基金资助:
Project supported by the Indian Space Research Organization through Respond Project (Grant No. ISRO/RES/2/356/10-11).

Electron inelastic mean free paths in solids: A theoretical approach

Siddharth H. Pandya^a, B. G. Vaishnav^b, K. N. Joshipura^a

a Department of Physics, Sardar Patel University, Vallabh Vidyanagar-388120 (Gujarat) India;
b Physical Research Laboratory, Navarangpura, Ahmedabad-380009 (Gujarat) India

Received:2012-09-15 Online:2012-08-01 Published:2012-08-01
Contact: Siddharth H. Pandya E-mail:siddharth033@gmail.com
Supported by:
Project supported by the Indian Space Research Organization through Respond Project (Grant No. ISRO/RES/2/356/10-11).

摘要/Abstract

摘要： In the present paper, the inelastic mean free path (IMFP) of incident electrons is calculated as a function of energy for silicon (Si), oxides of silicon (SiO₂), SiO, and Al₂O₃ in bulk form by employing atomic/molecular inelastic cross sections derived by semi-empirical quantum mechanical method developed earlier. A general agreement of the present results is found with the most of the available data. It is of great importance that we have been able to estimate the minimum IMFP which corresponds to the peak of inelastic interactions of incident electrons in each solid investigated. New results are presented for SiO for which no comparison is available. The present work is important in view of the lack of experimental data on IMFP in solids.

关键词: electron inelastic mean free path, complex potential, inelastic electron scattering cross sections, solids

Abstract: In the present paper, the inelastic mean free path (IMFP) of incident electrons is calculated as a function of energy for silicon (Si), oxides of silicon (SiO₂), SiO, and Al₂O₃ in bulk form by employing atomic/molecular inelastic cross sections derived by semi-empirical quantum mechanical method developed earlier. A general agreement of the present results is found with the most of the available data. It is of great importance that we have been able to estimate the minimum IMFP which corresponds to the peak of inelastic interactions of incident electrons in each solid investigated. New results are presented for SiO for which no comparison is available. The present work is important in view of the lack of experimental data on IMFP in solids.

Key words: electron inelastic mean free path, complex potential, inelastic electron scattering cross sections, solids

中图分类号: (Atomic excitation and ionization)

34.80.Dp

34.80.Gs (Molecular excitation and ionization) 34.80.Ht (Dissociation and dissociative attachment) 72.15.Lh (Relaxation times and mean free paths)

Siddharth H. Pandya, B. G. Vaishnav, K. N. Joshipura. Electron inelastic mean free paths in solids: A theoretical approach[J]. 中国物理B, 2012, 21(9): 93402-093402.

Siddharth H. Pandya, B. G. Vaishnav, K. N. Joshipura. Electron inelastic mean free paths in solids: A theoretical approach[J]. Chin. Phys. B, 2012, 21(9): 93402-093402.

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Electron inelastic mean free paths in solids: A theoretical approach

Electron inelastic mean free paths in solids: A theoretical approach

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