中国物理B ›› 2012, Vol. 21 ›› Issue (6): 65201-065201.doi: 10.1088/1674-1056/21/6/065201

• PHYSICS OF GASES, PLASMAS, AND ELECTRIC DISCHARGES • 上一篇    下一篇

The effects of substrate temperature on ZnO-based resistive random access memory devices

赵建伟, 刘凤娟, 黄海琴, 胡佐富, 张希清   

  1. Key Laboratory of Luminescence and Optical Information, Ministry of Education,Institute of Opto-electronic Technology, Beijing Jiaotong University, Beijing 100044, China
  • 收稿日期:2012-01-17 修回日期:2012-02-17 出版日期:2012-05-01 发布日期:2012-05-01
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 50972007), the Beijing Municipal Natural Science Foundation, China (Grant No. 4092035), the State Key Program for Basic Research of the Ministry of Science and Technology of China (Grant No. 2011CB932703), the Special Items Fund of Beijing Municipal Commission of Education, China, the Opened Fund of the State Key Laboratory on Integrated Optoelectronics, China, and the National Natural Science Foundation of China for Distinguished Young Scholars (Grant No. 60825407).

The effects of substrate temperature on ZnO-based resistive random access memory devices

Zhao Jian-Wei(赵建伟), Liu Feng-Juan(刘凤娟), Huang Hai-Qin(黄海琴), Hu Zuo-Fu(胡佐富), and Zhang Xi-Qing(张希清)†   

  1. Key Laboratory of Luminescence and Optical Information, Ministry of Education,Institute of Opto-electronic Technology, Beijing Jiaotong University, Beijing 100044, China
  • Received:2012-01-17 Revised:2012-02-17 Online:2012-05-01 Published:2012-05-01
  • Contact: Zhang Xi-Qing E-mail:xqzhang@bjtu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 50972007), the Beijing Municipal Natural Science Foundation, China (Grant No. 4092035), the State Key Program for Basic Research of the Ministry of Science and Technology of China (Grant No. 2011CB932703), the Special Items Fund of Beijing Municipal Commission of Education, China, the Opened Fund of the State Key Laboratory on Integrated Optoelectronics, China, and the National Natural Science Foundation of China for Distinguished Young Scholars (Grant No. 60825407).

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摘要： Ag/ZnO/Zn/Pt structure resistive switching devices are prepared by radio frequency magnetron sputtering. The ZnO thin films are grown at room temperature and 400 ℃ substrate temperature, respectively. By comparing the data, we find that the latter device displayed better stability in the repetitive switching cycle test, and the resistance ratio between a high resistance state and a low resistance state is correspondingly increased. After 104-s storage time measurement, this device exhibits a good retention property. Moreover, the operation voltages are very low: -0.3 V/-0.7 V (OFF state) and 0.3 V (ON state). A high-voltage forming process in the initial state is not required, and a multistep reset process is demonstrated.

关键词: ZnO, resistive switching devices, magnetron sputtering

Abstract: Ag/ZnO/Zn/Pt structure resistive switching devices are prepared by radio frequency magnetron sputtering. The ZnO thin films are grown at room temperature and 400 ℃ substrate temperature, respectively. By comparing the data, we find that the latter device displayed better stability in the repetitive switching cycle test, and the resistance ratio between a high resistance state and a low resistance state is correspondingly increased. After 104-s storage time measurement, this device exhibits a good retention property. Moreover, the operation voltages are very low: -0.3 V/-0.7 V (OFF state) and 0.3 V (ON state). A high-voltage forming process in the initial state is not required, and a multistep reset process is demonstrated.

Key words: ZnO, resistive switching devices, magnetron sputtering

中图分类号:  (Plasma-based ion implantation and deposition)

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