The effects of substrate temperature on ZnO-based resistive random access memory devices

赵建伟, 刘凤娟, 黄海琴, 胡佐富, 张希清

Zhao Jian-Wei(赵建伟), Liu Feng-Juan(刘凤娟), Huang Hai-Qin(黄海琴), Hu Zuo-Fu(胡佐富), and Zhang Xi-Qing(张希清)

中国物理B . 2012, (6): 65201 -065201 . DOI: 10.1088/1674-1056/21/6/065201