中国物理B ›› 2012, Vol. 21 ›› Issue (3): 37301-037301.doi: 10.1088/1674-1056/21/3/037301

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谷利英1,李艳芳1 2,楚卫东2,卫英慧1   

  • 收稿日期:2011-07-23 修回日期:2011-09-28 出版日期:2012-02-15 发布日期:2012-02-15
  • 通讯作者: 李艳芳,liyf1230@sohu.com E-mail:liyf1230@sohu.com

Topological structure effect on far-infrared spectra in a GaAs/InAs nanoring

Gu Li-Ying(谷利英)a), Li Yan-Fang(李艳芳)a)b)†, Chu Wei-Dong(楚卫东)b), and Wei Ying-Hui(卫英慧)a)   

  1. a. College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024, China;
    b. Institute of Applied Physics and Computational Mathematics, Beijing 100088, China
  • Received:2011-07-23 Revised:2011-09-28 Online:2012-02-15 Published:2012-02-15
  • Contact: Li Yan-Fang,liyf1230@sohu.com E-mail:liyf1230@sohu.com
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 11074025), the National Basic Research Program of China (Grant No. 2011CB922200), and the China Academy of Engineering and Physics('909').

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Abstract: On the basis of the growth mechanism of a GaAs/InAs nanoring, we propose a fine model which reflects the confinement details of real nanoring. Through calculations of the two-electron energy and far-infrared (FIR) spectra, we find that the ring topological structure and electron-electron interaction have great influence on the FIR spectra. The two unknown transition peaks in the experiment are determined theoretically. The theoretical results are in good agreement with the experiments.

Key words: nanoring, topological structure, far-infrared spectrum, confinement potential

中图分类号:  (Quantum dots)

  • 73.21.La
75.75.-c (Magnetic properties of nanostructures) 78.40.Fy (Semiconductors)