Band alignment of Ga2O3/6H-SiC heterojunction

doi:10.1088/1674-1056/20/11/116101

中国物理B ›› 2011, Vol. 20 ›› Issue (11): 116101-116101.doi: 10.1088/1674-1056/20/11/116101

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Band alignment of Ga₂O₃/6H-SiC heterojunction

常少辉, 陈之战, 黄维, 刘学超, 陈博源, 李铮铮, 施尔畏

Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China

收稿日期:2011-03-19 修回日期:2011-06-22 出版日期:2011-11-15 发布日期:2011-11-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 50702071 and 50772122) and the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 51002176).

Band alignment of Ga₂O₃/6H-SiC heterojunction

Chang Shao-Hui(常少辉), Chen Zhi-Zhan(陈之战), Huang Wei(黄维), Liu Xue-Chao(刘学超),^† Chen Bo-Yuan(陈博源), Li Zheng-Zheng(李铮铮), and Shi Er-Wei(施尔畏)

Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China

Received:2011-03-19 Revised:2011-06-22 Online:2011-11-15 Published:2011-11-15
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 50702071 and 50772122) and the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 51002176).

摘要/Abstract

摘要： A high-quality Ga₂O₃ thin film is deposited on an SiC substrate to form a heterojunction structure. The band alignment of the Ga₂O₃/6H-SiC heterojunction is studied by using synchrotron radiation photoelectron spectroscopy. The energy band diagram of the Ga₂O₃/6H-SiC heterojunction is obtained by analysing the binding energies of Ga 3d and Si 2p at the surface and the interface of the heterojunction. The valence band offset is experimentally determined to be 2.8 eV and the conduction band offset is calculated to be 0.89 eV, which indicate a type-II band alignment. This provides useful guidance for the application of Ga₂O₃/6H-SiC electronic devices.

Abstract: A high-quality Ga₂O₃ thin film is deposited on an SiC substrate to form a heterojunction structure. The band alignment of the Ga₂O₃/6H-SiC heterojunction is studied by using synchrotron radiation photoelectron spectroscopy. The energy band diagram of the Ga₂O₃/6H-SiC heterojunction is obtained by analysing the binding energies of Ga 3d and Si 2p at the surface and the interface of the heterojunction. The valence band offset is experimentally determined to be 2.8 eV and the conduction band offset is calculated to be 0.89 eV, which indicate a type-II band alignment. This provides useful guidance for the application of Ga₂O₃/6H-SiC electronic devices.

Key words: band alignment, Ga₂O₃/6H-SiC, synchrotron radiation photoelectron spectroscopy

中图分类号: (Surface phenomena: alignment, anchoring, anchoring transitions, surface-induced layering, surface-induced ordering, wetting, prewetting transitions, and wetting transitions)

61.30.Hn

68.47.Fg (Semiconductor surfaces)

常少辉, 陈之战, 黄维, 刘学超, 陈博源, 李铮铮, 施尔畏. Band alignment of Ga₂O₃/6H-SiC heterojunction[J]. 中国物理B, 2011, 20(11): 116101-116101.

Chang Shao-Hui(常少辉), Chen Zhi-Zhan(陈之战), Huang Wei(黄维), Liu Xue-Chao(刘学超), Chen Bo-Yuan(陈博源), Li Zheng-Zheng(李铮铮), and Shi Er-Wei(施尔畏) . Band alignment of Ga₂O₃/6H-SiC heterojunction[J]. Chin. Phys. B, 2011, 20(11): 116101-116101.

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Band alignment of Ga₂O₃/6H-SiC heterojunction

Band alignment of Ga₂O₃/6H-SiC heterojunction

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