中国物理B ›› 2011, Vol. 20 ›› Issue (11): 116101-116101.doi: 10.1088/1674-1056/20/11/116101
• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇 下一篇
常少辉, 陈之战, 黄维, 刘学超, 陈博源, 李铮铮, 施尔畏
Chang Shao-Hui(常少辉), Chen Zhi-Zhan(陈之战), Huang Wei(黄维), Liu Xue-Chao(刘学超),† Chen Bo-Yuan(陈博源), Li Zheng-Zheng(李铮铮), and Shi Er-Wei(施尔畏)
摘要: A high-quality Ga2O3 thin film is deposited on an SiC substrate to form a heterojunction structure. The band alignment of the Ga2O3/6H-SiC heterojunction is studied by using synchrotron radiation photoelectron spectroscopy. The energy band diagram of the Ga2O3/6H-SiC heterojunction is obtained by analysing the binding energies of Ga 3d and Si 2p at the surface and the interface of the heterojunction. The valence band offset is experimentally determined to be 2.8 eV and the conduction band offset is calculated to be 0.89 eV, which indicate a type-II band alignment. This provides useful guidance for the application of Ga2O3/6H-SiC electronic devices.
中图分类号: (Surface phenomena: alignment, anchoring, anchoring transitions, surface-induced layering, surface-induced ordering, wetting, prewetting transitions, and wetting transitions)