中国物理B ›› 2011, Vol. 20 ›› Issue (10): 103101-103101.doi: 10.1088/1674-1056/20/10/103101
徐国亮1, 刘雪峰1, 张现周1, 刘玉芳1, 姚东永2
Yao Dong-Yong(姚东永)a)b), Xu Guo-Liang(徐国亮) a), Liu Xue-Feng(刘雪峰)a)† Zhang Xian-Zhou(张现周)a), and Liu Yu-Fang(刘玉芳)a)
摘要: The structure of the Si3Ox (x=2, 3) cluster is investigated; we find that the geometry of Si3O2 is similar to that of Si3O3 except for the oxygen-deficient defect structure (Si-Si band) which exists only in the Si3O2 cluster. It is known that oxygen-deficient defects are used to explain visible luminescence (especially blue, purple and ultraviolet light) from silicon-based materials, which are directly bound up with the excited states of the molecules. Therefore the excitation properties of the two clusters are also studied. Our results show that the absorption spectrum of Si3O2 is concentrated in the visible light region. In contrast, the absorption spectrum of Si3O3 is mainly located in the ultraviolet light region. The calculations are perfectly consistent with experimental data and also support the theory of oxygen-deficient defects.
中图分类号: (Calculations and mathematical techniques in atomic and molecular physics)