中国物理B ›› 2011, Vol. 20 ›› Issue (10): 103101-103101.doi: 10.1088/1674-1056/20/10/103101

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Study of the excitation properties of the Si3O2 cluster under an external electric field

徐国亮1, 刘雪峰1, 张现周1, 刘玉芳1, 姚东永2   

  1. (1)College of Physics & Information Engineering, Henan Normal University, Xinxiang 453007, China; (2)College of Physics & Information Engineering, Henan Normal University, Xinxiang 453007, China; Pingdingshan Education Institute, Pingdingshan 467000, China
  • 收稿日期:2011-03-12 修回日期:2011-04-12 出版日期:2011-10-15 发布日期:2011-10-15
  • 基金资助:
    Project supported by the Natural Science Foundation of Henan Province of China (Grant No. 092300410249), the Natural Science Foundation of the Education Bureau of Henan Province of China (Grant No. 2010A140008), and the Foundation for University Young Core Instructors of Henan Province, China (Grant No. 2009GGJS-044).

Study of the excitation properties of the Si3O2 cluster under an external electric field

Yao Dong-Yong(姚东永)a)b), Xu Guo-Liang(徐国亮) a), Liu Xue-Feng(刘雪峰)a)† Zhang Xian-Zhou(张现周)a), and Liu Yu-Fang(刘玉芳)a)   

  1. a College of Physics & Information Engineering, Henan Normal University, Xinxiang 453007, China; b Pingdingshan Education Institute, Pingdingshan 467000, China
  • Received:2011-03-12 Revised:2011-04-12 Online:2011-10-15 Published:2011-10-15
  • Supported by:
    Project supported by the Natural Science Foundation of Henan Province of China (Grant No. 092300410249), the Natural Science Foundation of the Education Bureau of Henan Province of China (Grant No. 2010A140008), and the Foundation for University Young Core Instructors of Henan Province, China (Grant No. 2009GGJS-044).

摘要: The structure of the Si3Ox (x=2, 3) cluster is investigated; we find that the geometry of Si3O2 is similar to that of Si3O3 except for the oxygen-deficient defect structure (Si-Si band) which exists only in the Si3O2 cluster. It is known that oxygen-deficient defects are used to explain visible luminescence (especially blue, purple and ultraviolet light) from silicon-based materials, which are directly bound up with the excited states of the molecules. Therefore the excitation properties of the two clusters are also studied. Our results show that the absorption spectrum of Si3O2 is concentrated in the visible light region. In contrast, the absorption spectrum of Si3O3 is mainly located in the ultraviolet light region. The calculations are perfectly consistent with experimental data and also support the theory of oxygen-deficient defects.

关键词: Si3O2 and Si3O3 molecules, excited state, oxygen-deficient defect, single-excitation configurations with density functional theory

Abstract: The structure of the Si3Ox (x=2, 3) cluster is investigated; we find that the geometry of Si3O2 is similar to that of Si3O3 except for the oxygen-deficient defect structure (Si-Si band) which exists only in the Si3O2 cluster. It is known that oxygen-deficient defects are used to explain visible luminescence (especially blue, purple and ultraviolet light) from silicon-based materials, which are directly bound up with the excited states of the molecules. Therefore the excitation properties of the two clusters are also studied. Our results show that the absorption spectrum of Si3O2 is concentrated in the visible light region. In contrast, the absorption spectrum of Si3O3 is mainly located in the ultraviolet light region. The calculations are perfectly consistent with experimental data and also support the theory of oxygen-deficient defects.

Key words: Si3O2 and Si3O3 molecules, excited state, oxygen-deficient defect, single-excitation configurations with density functional theory

中图分类号:  (Calculations and mathematical techniques in atomic and molecular physics)

  • 31.15.-p
31.15.ag (Excitation energies and lifetimes; oscillator strengths)