The physical process analysis of the capacitance–voltage characteristics of AlGaN/AlN/GaN high electron mobility transistors

doi:10.1088/1674-1056/19/9/097302

中国物理B ›› 2010, Vol. 19 ›› Issue (9): 97302-097302.doi: 10.1088/1674-1056/19/9/097302

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

The physical process analysis of the capacitance–voltage characteristics of AlGaN/AlN/GaN high electron mobility transistors

王鑫华, 赵妙, 刘新宇, 蒲颜, 郑英奎, 魏珂

Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China

收稿日期:2009-11-03 修回日期:2010-03-24 出版日期:2010-09-15 发布日期:2010-09-15
基金资助:
Project supported by the National Basic Research Program (973) of China (Grant No. 2010CB327500) and the National Natural Science Foundation of China (Grant Nos. 60976059 and 60890191).

The physical process analysis of the capacitance–voltage characteristics of AlGaN/AlN/GaN high electron mobility transistors

Wang Xin-Hua(王鑫华), Zhao Miao(赵妙), Liu Xin-Yu(刘新宇)^†, Pu Yan(蒲颜), Zheng Ying-Kui(郑英奎), and Wei Ke(魏珂)

Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China

Received:2009-11-03 Revised:2010-03-24 Online:2010-09-15 Published:2010-09-15
Supported by:
Project supported by the National Basic Research Program (973) of China (Grant No. 2010CB327500) and the National Natural Science Foundation of China (Grant Nos. 60976059 and 60890191).

摘要/Abstract

摘要： This paper deduces the expression of the Schottky contact capacitance of AlGaN/AlN/GaN high electron mobility transistors (HEMTs), which will help to understand the electron depleting process. Some material parameters related with capacitance--voltage profiling are given in the expression. Detailed analysis of the forward-biased capacitance has been carried on. The gate capacitance of undoped AlGaN/AlN/GaN HEMT will fall under forward bias. If a rising profile is obviously observed, the donor-like impurity or trap is possibly introduced in the barrier.

Abstract: This paper deduces the expression of the Schottky contact capacitance of AlGaN/AlN/GaN high electron mobility transistors (HEMTs), which will help to understand the electron depleting process. Some material parameters related with capacitance–voltage profiling are given in the expression. Detailed analysis of the forward-biased capacitance has been carried on. The gate capacitance of undoped AlGaN/AlN/GaN HEMT will fall under forward bias. If a rising profile is obviously observed, the donor-like impurity or trap is possibly introduced in the barrier.

Key words: AlGaN/AlN/GaN, HEMT, capacitance–voltage characteristics, trap

中图分类号:

7320D

王鑫华, 赵妙, 刘新宇, 蒲颜, 郑英奎, 魏珂. The physical process analysis of the capacitance–voltage characteristics of AlGaN/AlN/GaN high electron mobility transistors[J]. 中国物理B, 2010, 19(9): 97302-097302.

Wang Xin-Hua(王鑫华), Zhao Miao(赵妙), Liu Xin-Yu(刘新宇), Pu Yan(蒲颜), Zheng Ying-Kui(郑英奎), and Wei Ke(魏珂). The physical process analysis of the capacitance–voltage characteristics of AlGaN/AlN/GaN high electron mobility transistors[J]. Chin. Phys. B, 2010, 19(9): 97302-097302.

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The physical process analysis of the capacitance–voltage characteristics of AlGaN/AlN/GaN high electron mobility transistors

The physical process analysis of the capacitance–voltage characteristics of AlGaN/AlN/GaN high electron mobility transistors

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