The physical process analysis of the capacitance–voltage characteristics of AlGaN/AlN/GaN high electron mobility transistors
王鑫华, 赵妙, 刘新宇, 蒲颜, 郑英奎, 魏珂
The physical process analysis of the capacitance–voltage characteristics of AlGaN/AlN/GaN high electron mobility transistors
Wang Xin-Hua(王鑫华), Zhao Miao(赵妙), Liu Xin-Yu(刘新宇), Pu Yan(蒲颜), Zheng Ying-Kui(郑英奎), and Wei Ke(魏珂)
中国物理B
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2010, (9): 97302
-097302
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DOI: 10.1088/1674-1056/19/9/097302