中国物理B ›› 2009, Vol. 18 ›› Issue (6): 2589-2595.doi: 10.1088/1674-1056/18/6/078

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

The magnetoresistive effect induced by stress in spin-valve structure

钱丽洁, 许小勇, 胡经国   

  1. College of Physics Science and Technology, Yangzhou University, Yangzhou 225002, China
  • 收稿日期:2008-10-05 修回日期:2008-12-10 出版日期:2009-06-20 发布日期:2009-06-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 10347118) and Natural Science Foundation of College of Jiangsu Province, China (Grant Nos 2006KJB140133 and 2007KJD140241).

The magnetoresistive effect induced by stress in spin-valve structure

Qian Li-Jie(钱丽洁), Xu Xiao-Yong(许小勇), and Hu Jing-Guo(胡经国)†   

  1. College of Physics Science and Technology, Yangzhou University, Yangzhou 225002, China
  • Received:2008-10-05 Revised:2008-12-10 Online:2009-06-20 Published:2009-06-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 10347118) and Natural Science Foundation of College of Jiangsu Province, China (Grant Nos 2006KJB140133 and 2007KJD140241).

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摘要： Using a method of free energy minimization, this paper investigates the magnetization properties of a ferromagnetic (FM) monolayer and an FM/antiferromagnetic (AFM) bilayer under a stress field, respectively. It then investigates the magnetoresistance (MR) of the spin-valve structure, which is built by an FM monolayer and an FM/AFM bilayer, and its dependence upon the applied stress field. The results show that under the stress field, the magnetization properties of the FM monolayer is obviously different from that of the FM/AFM bilayer, since the coupled AFM layer can obviously block the magnetization of the FM layer. This phenomenon makes the MR of the spin-valve structure become obvious. In detail, there are two behaviors for the MR of the spin-valve structure dependence upon the stress field distinguished by the coupling (FM coupling or AFM coupling) between the FM layer and the FM/AFM bilayer. Either behavior of the MR of the spin-valve structure depends on the stress field including its value and orientation. Based on these investigations, a perfect mechanical sensor at the nano-scale is suggested to be devised experimentally.

Abstract: Using a method of free energy minimization, this paper investigates the magnetization properties of a ferromagnetic (FM) monolayer and an FM/antiferromagnetic (AFM) bilayer under a stress field, respectively. It then investigates the magnetoresistance (MR) of the spin-valve structure, which is built by an FM monolayer and an FM/AFM bilayer, and its dependence upon the applied stress field. The results show that under the stress field, the magnetization properties of the FM monolayer is obviously different from that of the FM/AFM bilayer, since the coupled AFM layer can obviously block the magnetization of the FM layer. This phenomenon makes the MR of the spin-valve structure become obvious. In detail, there are two behaviors for the MR of the spin-valve structure dependence upon the stress field distinguished by the coupling (FM coupling or AFM coupling) between the FM layer and the FM/AFM bilayer. Either behavior of the MR of the spin-valve structure depends on the stress field including its value and orientation. Based on these investigations, a perfect mechanical sensor at the nano-scale is suggested to be devised experimentally.

Key words: magnetization, magnetoresistance, spin-valve structure, stress field

中图分类号:  (Giant magnetoresistance)

  • 75.47.De
73.50.Jt (Galvanomagnetic and other magnetotransport effects) 75.50.Ee (Antiferromagnetics) 75.60.Ej (Magnetization curves, hysteresis, Barkhausen and related effects) 75.70.Cn (Magnetic properties of interfaces (multilayers, superlattices, heterostructures))