中国物理B ›› 2008, Vol. 17 ›› Issue (11): 4279-4284.doi: 10.1088/1674-1056/17/11/053
方志杰1, 石丽洁2, 刘永辉2
Fang Zhi-Jie (方志杰)ab, Shi Li-Jie (石丽洁)b, Liu Yong-Hui (刘永辉)b
摘要: This paper studies the electronic structure and native defects in transparent conducting oxides CuScO$_{2}$ and CuYO$_{2}$ using the first-principle calculations. Some typical native copper-related and oxygen-related defects, such as vacancy, interstitials, and antisites in their relevant charge state are considered. The results of calculation show that, Cu$M$O$_{2}$($M=$ Sc, Y) is impossible to show n-type conductivity ability. It finds that copper vacancy and oxygen interstitial have relatively low formation energy and they are the relevant defects in CuScO$_{2}$ and CuYO$_{2}$. Copper vacancy is the most efficient acceptor, and under O-rich condition oxygen antisite also becomes important acceptor and plays an important role in p-type conductivity.
中图分类号: (Density functional theory, local density approximation, gradient and other corrections)