中国物理B ›› 2006, Vol. 15 ›› Issue (4): 866-871.doi: 10.1088/1009-1963/15/4/035

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Preparation of hydrogenated microcrystalline silicon films with hot-wire-assisted MWECR-CVD system

邓金祥1, 何斌2, 陈光华2, 朱秀红2, 张文理2, 马占杰2, 郜志华2, 宋雪梅2, 丁毅3   

  1. (1)College of Applied Science, Beijing University of Technology,Beijing 100022, China; (2)College of Material Science and Engineering, Beijing University of Technology, Beijing 100022, China; (3)School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China
  • 收稿日期:2005-08-23 修回日期:2006-01-19 出版日期:2006-04-20 发布日期:2006-04-20
  • 基金资助:
    Project supported by the State Key Development Program for Basic Research of China (Grant No G2000028201-1).

Preparation of hydrogenated microcrystalline silicon films with hot-wire-assisted MWECR-CVD system

He Bin (何斌)a, Chen Guang-Hua (陈光华)a, Zhu Xiu-Hong (朱秀红)a, Zhang Wen-Li (张文理)a, Ding Yi (丁毅)b, Ma Zhan-Jie (马占杰)a, Gao Zhi-Hua (郜志华)a, Song Xue-Mei (宋雪梅)a, Deng Jin-Xiang (邓金祥)c   

  1. a College of Material Science and Engineering, Beijing University of Technology, Beijing 100022, China; b School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China; c College of Applied Science, Beijing University of Technology,Beijing 100022, China
  • Received:2005-08-23 Revised:2006-01-19 Online:2006-04-20 Published:2006-04-20
  • Supported by:
    Project supported by the State Key Development Program for Basic Research of China (Grant No G2000028201-1).

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摘要： Intrinsic hydrogenated microcrystalline silicon (\muc-Si:H) films have been prepared by hot-wire-assisted microwave electron-cyclotron-resonance chemical vapour deposition (HW-MWECR-CVD) under different deposition conditions. Fourier-transform infrared spectra and Raman spectra were measured. Optical band gap was determined by Tauc plots, and experiments of photo-induced degradation were performed. It was observed that hydrogen dilution plays a more essential role than substrate temperature in microcrystalline transformation at low temperatures. Crystalline volume fraction and mean grain size in the films increase with the dilution ratio (R=H2/(H2+SiH4)). With the rise of crystallinity in the films, the optical band gap tends to become narrower while the hydrogen content and photo-induced degradation decrease dramatically. The samples, were identified as \mu c-Si:H films, by calculating the optical band gap. It is considered that hydrogen dilution has an effect on reducing the crystallization activation energy of the material, which promotes the heterogeneous solid-state phase transition characterized by the Johnson--Mehl--Avrami (JMA) equation. The films with the needed structure can be prepared by balancing deposition and crystallization through controlling process parameters.

关键词: HW-MWECR-CVD, \mu$c-Si:H, hydrogen dilution, heterogeneous solid-state phase transition

Abstract: Intrinsic hydrogenated microcrystalline silicon ($\mu$c-Si:H) films have been prepared by hot-wire-assisted microwave electron-cyclotron-resonance chemical vapour deposition (HW-MWECR-CVD) under different deposition conditions. Fourier-transform infrared spectra and Raman spectra were measured. Optical band gap was determined by Tauc plots, and experiments of photo-induced degradation were performed. It was observed that hydrogen dilution plays a more essential role than substrate temperature in microcrystalline transformation at low temperatures. Crystalline volume fraction and mean grain size in the films increase with the dilution ratio (R=H2/(H2+SiH4)). With the rise of crystallinity in the films, the optical band gap tends to become narrower while the hydrogen content and photo-induced degradation decrease dramatically. The samples, were identified as $\mu$c-Si:H films, by calculating the optical band gap. It is considered that hydrogen dilution has an effect on reducing the crystallization activation energy of the material, which promotes the heterogeneous solid-state phase transition characterized by the Johnson--Mehl--Avrami (JMA) equation. The films with the needed structure can be prepared by balancing deposition and crystallization through controlling process parameters.

Key words: HW-MWECR-CVD, $\mu$c-Si:H, hydrogen dilution, heterogeneous solid-state phase transition

中图分类号:  (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

  • 81.15.Gh
73.50.Pz (Photoconduction and photovoltaic effects) 73.61.Cw (Elemental semiconductors) 78.20.-e (Optical properties of bulk materials and thin films) 78.30.Am (Elemental semiconductors and insulators) 78.66.Db (Elemental semiconductors and insulators)