中国物理B ›› 2005, Vol. 14 ›› Issue (10): 2133-2136.doi: 10.1088/1009-1963/14/10/035

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Photoluminescence characteristics of GaN:Si

龚欣1, 张晓菊1, 郝跃1, 冯倩2   

  1. (1)Research Institute of Microelectronics, Xidian University,Key Laboratory of Ministry of Education for Wide Gap Semiconductor Materials and Devices, Xi'an 710071, China; (2)Research Institute of Microelectronics, Xidian University,Key Laboratory of Ministry of Education for Wide Gap Semiconductor Materials and Devices, Xi'an 710071, China;School of Telecommunications Engineering, Xidian University,Xi'an 710071, China
  • 收稿日期:2005-03-24 修回日期:2005-05-30 出版日期:2005-10-20 发布日期:2005-10-20
  • 基金资助:
    Project supported by the State Key Development Program for Basic Research of China(973) and the National Advanced Research Program (Grant No 41308060106).

Photoluminescence characteristics of GaN:Si

Feng Qian (冯倩)ab, Gong Xin (龚欣)a, Zhang Xiao-Ju (张晓菊)a, Hao Yue (郝跃)a   

  1. a Research Institute of Microelectronics, Xidian University, Key Laboratory of Ministry of Education for Wide Gap Semiconductor Materials and Devices, Xi'an 710071, China; b School of Telecommunications Engineering, Xidian University, Xi'an 710071, China
  • Received:2005-03-24 Revised:2005-05-30 Online:2005-10-20 Published:2005-10-20
  • Supported by:
    Project supported by the State Key Development Program for Basic Research of China(973) and the National Advanced Research Program (Grant No 41308060106).

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摘要： Both the electrical and optical properties are studied of the GaN:Si films with carrier concentrations ranging from 10$^{17}$cm$^{-3}$ to 10$^{19}$cm$^{-3}$.The results indicate that the increase in slope of carrier concentration starts to slow down when the flow rate of SiH$_{4}$ is larger than 6.38\mu $mol/min, which is attributed to the amphoteric character of Si. At the same time, the photoluminescence results show that the FWHM of UV is widened, which can be interpreted quantitatively with a semi-classic model. Furthermore, the intensity ratio between the yellow and the UV luminescences reduces monotonically with Si dopants increasing.

关键词: GaN:Si, heteroepitaxy, Hall, photoluminescence

Abstract: Both the electrical and optical properties are studied of the GaN:Si films with carrier concentrations ranging from 10$^{17}$cm$^{-3}$ to 10$^{19}$cm$^{-3}$.The results indicate that the increase in slope of carrier concentration starts to slow down when the flow rate of SiH$_{4}$ is larger than 6.38$\mu$mol/min, which is attributed to the amphoteric character of Si. At the same time, the photoluminescence results show that the FWHM of UV is widened, which can be interpreted quantitatively with a semi-classic model. Furthermore, the intensity ratio between the yellow and the UV luminescences reduces monotonically with Si dopants increasing.

Key words: GaN:Si, heteroepitaxy, Hall, photoluminescence

中图分类号:  (III-V semiconductors)

  • 78.55.Cr
78.66.Fd (III-V semiconductors) 73.61.Ey (III-V semiconductors) 73.50.Dn (Low-field transport and mobility; piezoresistance) 68.55.Ln (Defects and impurities: doping, implantation, distribution, concentration, etc.)