中国物理B ›› 2003, Vol. 12 ›› Issue (4): 438-442.doi: 10.1088/1009-1963/12/4/317

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Role of amorphous silicon domains on Er3+ emission in the Er-doped hydrogenated amorphous silicon suboxide film

李国华1, 丁琨1, 陈长勇2, 陈维德2, 宋淑芳2, 许振嘉2   

  1. (1)National Laboratory for Superlattices and Microstructures and Institute of semiconductors, Chinese Academy of Science, Beijing 100083, China; (2)State Laboratory for Surface Physics, Institute of Semiconductors and Centre for Condensed Matter Physics, Chinese Academy of Science, Beijing 100083, China
  • 收稿日期:2002-08-26 修回日期:2002-12-18 出版日期:2003-04-16 发布日期:2005-03-16
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 69976028).

Role of amorphous silicon domains on Er3+ emission in the Er-doped hydrogenated amorphous silicon suboxide film

Chen Chang-Yong (陈长勇)a, Chen Wei-De (陈维德)a, Li Guo-Hua (李国华)b, Song Shu-Fang (宋淑芳)a, Ding Kun (丁琨)b, Xu Zhen-Jia (许振嘉)a   

  1. a State Laboratory for Surface Physics, Institute of Semiconductors and Centre for Condensed Matter Physics, Chinese Academy of Science, Beijing 100083, China; b National Laboratory for Superlattices and Microstructures and Institute of semiconductors, Chinese Academy of Science, Beijing 100083, China
  • Received:2002-08-26 Revised:2002-12-18 Online:2003-04-16 Published:2005-03-16
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 69976028).

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摘要： An investigation on the correlation between amorphous Si (a-Si) domains and Er^{3+} emission in the Er-doped hydrogenated amorphous silicon suboxide (a-Si:O:H) film is presented. On one hand, a-Si domains provide sufficient carriers for Er^{3+} carrier-mediated excitation which has been proved to be the highest excitation path for Er^{3+} ion; on the other hand, hydrogen diffusion from a-Si domains to amorphous silicon oxide (a-SiO_x) matrix during annealing has been found and this possibly decreases the number of nonradiative centres around Er^{3+} ions. This study provides a better understanding of the role of a-Si domains on Er^{3+} emission in a-Si:O:H films.

Abstract: An investigation on the correlation between amorphous Si (a-Si) domains and Er3+ emission in the Er-doped hydrogenated amorphous silicon suboxide (a-Si:O:H<Er>) film is presented. On one hand, a-Si domains provide sufficient carriers for Er3+ carrier-mediated excitation which has been proved to be the highest excitation path for Er3+ ion; on the other hand, hydrogen diffusion from a-Si domains to amorphous silicon oxide (a-SiOx) matrix during annealing has been found and this possibly decreases the number of nonradiative centres around Er3+ ions. This study provides a better understanding of the role of a-Si domains on Er3+ emission in a-Si:O:Hfilms.

Key words: a-Si domain, erbium, photoluminescence

中图分类号:  (Amorphous materials; glasses and other disordered solids)

  • 78.55.Qr
78.66.-w (Optical properties of specific thin films)