中国物理B ›› 2001, Vol. 10 ›› Issue (13): 36-39.

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PHOTOLUMINESCENCE OF NANOCRYSTALLINE SiC FILMS PREPARED BY RF MAGNETRON SPUTTERING

李顺峰1, 杨辉1, 刘文西2, 谢仿卿3, 钟定永3, 王恩哥3, 刘技文4   

  1. (1)National Research Center for Optoelectronic Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (2)School of Materials Science and Engineering, Tianjin University, Tianjin 300072, China; (3)State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China; (4)State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China; School of Materials Science and Engineering, Tianjin University, Tianjin 300072, China
  • 收稿日期:2001-01-01 修回日期:2001-04-24 出版日期:2001-12-25 发布日期:2005-07-07
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 10074049, 19974071, 69736020) and by the Natural Sciences Foundation of Tianjin, China.

PHOTOLUMINESCENCE OF NANOCRYSTALLINE SiC FILMS PREPARED BY RF MAGNETRON SPUTTERING

Liu Ji-wen (刘技文)ab, Xie Fang-qing (谢仿卿)a, Zhong Ding-yong (钟定永)a, Wang En-ge (王恩哥)a, Liu Wen-xi (刘文西)b, Li Shun-feng (李顺峰)c, Yang Hui (杨辉)c    

  1. a State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China; b School of Materials Science and Engineering, Tianjin University, Tianjin 300072, China; c National Research Center for Optoelectronic Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • Received:2001-01-01 Revised:2001-04-24 Online:2001-12-25 Published:2005-07-07
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 10074049, 19974071, 69736020) and by the Natural Sciences Foundation of Tianjin, China.

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摘要： Amorphous SiC films are deposited on Si (111) substrates by rf magnetron sputtering and then annealed at 1200℃ for different times by a dc self-heating method in a vacuum annealing system. The crystallization of the amorphous SiC is determined by Raman scattering at room temperature and X-ray diffraction. The experimental result indicates that the SiC nanocrystals have formed in the films. The topography of the as-annealed films is characterized by atomic force microscopy. Measurements of photoluminescence of the as-annealed films show blue or violet light emission from the nanocrystalline SiC films and photoluminescence peak shifts to short wavelength side as the annealing time decreases.

Abstract: Amorphous SiC films are deposited on Si (111) substrates by rf magnetron sputtering and then annealed at 1200℃ for different times by a dc self-heating method in a vacuum annealing system. The crystallization of the amorphous SiC is determined by Raman scattering at room temperature and X-ray diffraction. The experimental result indicates that the SiC nanocrystals have formed in the films. The topography of the as-annealed films is characterized by atomic force microscopy. Measurements of photoluminescence of the as-annealed films show blue or violet light emission from the nanocrystalline SiC films and photoluminescence peak shifts to short wavelength side as the annealing time decreases.

Key words: luminescence, SiC, nanocrystalline film, rf sputtering

中图分类号: 

  • 7855